Abstract:In this study, an inorganic–organic hybrid thin-film transistor (TFT) with a top-gate structure is prepared using an inorganic ZnSnO film prepared via pulse plasma deposition as the channel layer and an organic polymethyl methacrylate film prepared by the solution method as the dielectric layer. The effect of oxygen pressure during the preparation of the ZnSnO channel layer and channel-layer structure on ZnSnO TFT performance was studied. The results show that increasing the oxygen pressure during the preparation process can effectively inhibit the formation of oxygen vacancies in ZnSnO and reduce the concentration of electron carriers in ZnSnO, resulting in a reduced off current and a positive shift of the threshold voltage ( V th ) in the single-channel layer ZnSnO TFT. In addition, a high-resistivity ZnSnO layer (Lt; with a lower electron-carrier concentration) is embedded between the low-resistivity ZnSnO layer (Lb; with a higher electron-carrier concentration) and the dielectric layer to form a high-/low-resistivity double-channel-layer structure (Lt/Lb). By changing the thickness combination of Lt/Lb, the resistance of the channel layer and the number of carriers modulated by gate voltage in the channel layer can be optimized, thereby adjusting the device's on current (affecting device mobility) and key energy consumption parameters (i.e., V th and off current) to achieve independent control. Thus, the fabricated double-channel-layer ZnSnO TFT exhibits excellent performance: high mobility (3.28 cm 2 /Vs), positive V th close to 0 V (0.48 V), and on-to-off current ratio of > 10 5 .

22.2: The influence of Oxygen Partial Pressure on the Performance of back‐channel‐etched a‐ZTO Thin‐Film Transistors

Oxygen Partial Pressure and Annealing Temperature Influence on the Performance of Back-Channel-etch Zinc Tin Oxide Thin Film Transistors

Effects of various oxygen partial pressures on Ti-doped ZnO thin film transistors fabricated on flexible plastic substrate

High-Performance Back-Channel-Etch Thin-Film Transistors with Zinc Tin Oxide As Barrier Layer Via Spray Coating

Effect of O2 Incorporation During the Channel Fabrication Process on Aluminum-Doped Zinc Oxide Thin-Film Transistor Characteristics

Effect of Oxygen Pressure on GZO Film As Active Layer of the TFT Fabricated at Room Temperature

Enhanced Performance of ZnO Thin-Film Transistors with ZnO Dual-Active-layer

Gate Insulator Influences on the Electrical Performance of Back-Channel-Etch Amorphous Zinc Tin Oxide (A-Zto) Thin Film Transistors

Effect of oxygen partial pressure on the performance of homojunction amorphous In-Ga-Zn-O thin-film transistors

High performance reactive sputtering deposited ZnO thin-film transistors on transparent substrate

Effect of Sputtering Oxygen Partial Pressure on the Praseodymium-Doped InZnO Thin Film Transistor Using Microwave Photoconductivity Decay Method

Achieving High Performance of ZnSnO Thin-Film Transistor via Homojunction Strategy

Performances and Preparation of Zinc-Tin Oxide Thin-Film Transistors

High-performance Al-Zn-O Thin-Film Transistors Sputtering at Different Power

Influence of O2 on Al-Zn-Sn-O TFTs in the Active Layer Deposition and Annealing Process

Performance enhancement of ATZO TFTs by component control and post treatment

High-performance Fully Transparent Al–Sn–Zn–O Thin-Film Transistors Using Double-Channel Structures

Top-gate thin-film transistors with amorphous ZnSnO channel layers prepared by pulsed plasma deposition

Oxygen Adsorption Effect of Amorphous InGaZnO Thin-Film Transistors

High-Performance Al–Sn–Zn–O Thin-Film Transistor with a Quasi-Double-Channel Structure

Fully-transparent Mo-doped ZnO TFTs fabricated in different oxygen partial pressure at low temperature