Abstract:High-performance ZnO thin-film transistors (TFTs) have been successfully fabricated by atomic layer deposition (ALD) with a maximum temperature of 200 °C. The impacts of deposition and annealing temperature on the characteristics of devices were discussed. ZnO thin films show a (002) preferred orientation at the high growth temperature. The carrier concentrations of ZnO TFTs can be optimized by appropriate growth temperature and annealing treatments. Subthreshold swing (SS) and hysteresis windows of TFTs are improved after annealing in dry O<sub>2</sub> due to the reduction in traps at ZnO/SiO<sub>2</sub> interface or/and within the ZnO channel. The ZnO TFT deposited at 150 °C with 200 °C annealing in oxygen demonstrates excellent electrical characteristics with high saturation mobility <inline-formula> <tex-math notation="LaTeX">$\mu _{\text {sat}}$ </tex-math></inline-formula> of <inline-formula> <tex-math notation="LaTeX">$7.8 {\mathrm {cm}}^{\text {2}}\text{V}^{-\text {1}}\text{s}^{-\text {1}}$ </tex-math></inline-formula>, small SS of 127 mV/decade, high <inline-formula> <tex-math notation="LaTeX">${I}_{ \mathrm{\scriptscriptstyle ON}}/{I}_{ \mathrm{\scriptscriptstyle OFF}}$ </tex-math></inline-formula> of <inline-formula> <tex-math notation="LaTeX">$2.8 \times 10^{\text {9}}$ </tex-math></inline-formula>, and good contact between source/drain electrodes. The high-performance ZnO TFTs with low processing temperatures have great potential in application for flexible electronics.

High-Performance Al–Sn–Zn–O Thin-Film Transistor with a Quasi-Double-Channel Structure

High-performance Fully Transparent Al–Sn–Zn–O Thin-Film Transistors Using Double-Channel Structures

Fully transparent high performance thin film transistors with bilayer ITO/Al-Sn-Zn-O channel structures fabricated on glass substrate

High-Performance Thin-Film Transistors with ZnO/Al2O3 Superlattice Channel Fabricated by Atomic Layer Deposition

Performance enhancement of ATZO TFTs by component control and post treatment

Enhanced Performance of ZnO Thin-Film Transistors with ZnO Dual-Active-layer

High-performance Al-Zn-O Thin-Film Transistors Sputtering at Different Power

High Performance Aluminum-Doped Zno Thin Film Transistors with High-K Gate Dielectrics Fabricated at Low Temperature

High-Performance Mo-Zn-O Oxide Transistors with Double Channels

Effects of channel structure consisting of ZnO/Al2O3 multilayers on thin-film transistors fabricated by atomic layer deposition

Enhanced Electrical Properties of Dual-Layer Channel ZnO Thin Film Transistors Prepared by Atomic Layer Deposition

Achieving High Performance of ZnSnO Thin-Film Transistor via Homojunction Strategy

Effect of Al Doping on Performance of ZnO Thin Film Transistors

High-Performance Transistors Based on Zinc Tin Oxides by Single Spin-Coating Process

P‐1.7: Atomic‐Layer‐Deposition Deposited Superlattice‐Structure Al‐Zn‐O Films for Thin Film Transistors Application

Bi-layer Channel AZO/ZnO Thin Film Transistors Fabricated by Atomic Layer Deposition Technique

High Performance Ti-Doped ZnO TFTs with AZO/TZO Heterojunction S/D Contacts

High performance of ZnSnO thin-film transistors engineered by oxygen defect modulation

Bi-layer channel structure-based oxide thin-film transistors consisting of ZnO and Al-doped ZnO with different Al compositions and stacking sequences

High-Performance ZnO Thin-Film Transistors Prepared by Atomic Layer Deposition

Improving Performance of Tin-Doped-Zinc-Oxide Thin-Film Transistors by Optimizing Channel Structure