Abstract:In this study, we propose, fabricate, and examine the electrical characteristics of high-performance channel-engineered amorphous aluminum-doped zinc tin oxide (a-AZTO) thin-film transistors (TFTs). Amorphous indium gallium zinc oxide (a-IGZO) film with improved conductivity (obtained via rapid thermal annealing in vacuum) is applied as the local conductive buried layer (LCBL) of the channel-engineered a-AZTO TFTs. The optical transmittance of the a-IGZO and a-AZTO films in the visible region is >85%. The a-IGZO LCBL reduces the resistance of the a-AZTO channel, thereby resulting in increased drain current and improved device performance. We find that our fabricated channel-engineered a-AZTO TFTs with LCBLs are superior to non-channel-engineered a-AZTO TFTs without LCBLs in terms of electrical properties such as the threshold voltage, mobility, subthreshold swing, and on-off current ratios. In particular, as the a-IGZO LCBL length at the bottom of the channel increases, the channel resistance gradually decreases, eventually resulting in a mobility of 22.8 cm²/V · s, subthreshold swing of 470 mV/dec, and on-off current ratio of 3.98×107. We also investigate the effect of the a-IGZO LCBL on the operational reliability of a-AZTO TFTs by measuring the variation in the threshold voltage for positive gate bias temperature stress (PBTS), negative gate bias temperature stress (NBTS), and negative gate bias temperature illumination stress (NBTIS). The results indicate that the TFT instability for temperature and light is not affected by the LCBL. Therefore, our proposed channel-engineered a-AZTO TFT can form a promising high-performance high-reliability switching device for next-generation displays.

Bi-layer Channel AZO/ZnO Thin Film Transistors Fabricated by Atomic Layer Deposition Technique

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Bi-layer channel structure-based oxide thin-film transistors consisting of ZnO and Al-doped ZnO with different Al compositions and stacking sequences

Enhanced Electrical Properties of Dual-Layer Channel ZnO Thin Film Transistors Prepared by Atomic Layer Deposition

Performance Improvement of Atomic Layer-Deposited ZnO/Al2O3Thin-Film Transistors by Low-Temperature Annealing in Air

Effects of channel structure consisting of ZnO/Al2O3 multilayers on thin-film transistors fabricated by atomic layer deposition

Al-Doped Zno Thin-Film Transistors on Flexible Plastic Substrate

High-Performance Thin-Film Transistors with ZnO/Al2O3 Superlattice Channel Fabricated by Atomic Layer Deposition

Effect Of O-2 Incorporation During The Channel Fabrication Process On Aluminum-Doped Zinc Oxide Thin-Film Transistor Characteristics

Performance Enhancement of Channel-Engineered Al-Zn-Sn-O Thin-Film Transistors with Highly Conductive In-Ga-Zn-O Buried Layer via Vacuum Rapid Thermal Annealing

Stability Enhancement of Low Temperature Thin-Film Transistors with Atomic-Layer-Deposited Zno:Al Channels

Performance Optimization of Atomic Layer Deposited ZnO Thin-Film Transistors by Vacuum Annealing

High Performance Aluminum-Doped Zno Thin Film Transistors with High-K Gate Dielectrics Fabricated at Low Temperature

High-Performance ZnO Thin-Film Transistors Prepared by Atomic Layer Deposition

High-Performance Al–Sn–Zn–O Thin-Film Transistor with a Quasi-Double-Channel Structure

Enhanced Stability Performance of Transparent Ozone ALD ZnO Thin-Film Transistors with SiAlO X Dielectric

Atomic Layer Deposition of Al-Doped ZnO Contacts for ZnO Thin-Film Transistors

Effect of Al Doping on Performance of ZnO Thin Film Transistors

High-Performance Dual-Layer Channel Indium Gallium Zinc Oxide Thin-Film Transistors Fabricated In Different Oxygen Contents At Low Temperature

Atomic Layer Deposition Deposited Al-Doped ZnO Films for Transistor Application

Enhanced Performance of Atomic Layer Deposited Thin-Film Transistors with High-Quality ZnO/Al 2 O 3 Interface