Abstract:High-performance ZnO thin-film transistors (TFTs) have been successfully fabricated by atomic layer deposition (ALD) with a maximum temperature of 200 °C. The impacts of deposition and annealing temperature on the characteristics of devices were discussed. ZnO thin films show a (002) preferred orientation at the high growth temperature. The carrier concentrations of ZnO TFTs can be optimized by appropriate growth temperature and annealing treatments. Subthreshold swing (SS) and hysteresis windows of TFTs are improved after annealing in dry O<sub>2</sub> due to the reduction in traps at ZnO/SiO<sub>2</sub> interface or/and within the ZnO channel. The ZnO TFT deposited at 150 °C with 200 °C annealing in oxygen demonstrates excellent electrical characteristics with high saturation mobility <inline-formula> <tex-math notation="LaTeX">$\mu _{\text {sat}}$ </tex-math></inline-formula> of <inline-formula> <tex-math notation="LaTeX">$7.8 {\mathrm {cm}}^{\text {2}}\text{V}^{-\text {1}}\text{s}^{-\text {1}}$ </tex-math></inline-formula>, small SS of 127 mV/decade, high <inline-formula> <tex-math notation="LaTeX">${I}_{ \mathrm{\scriptscriptstyle ON}}/{I}_{ \mathrm{\scriptscriptstyle OFF}}$ </tex-math></inline-formula> of <inline-formula> <tex-math notation="LaTeX">$2.8 \times 10^{\text {9}}$ </tex-math></inline-formula>, and good contact between source/drain electrodes. The high-performance ZnO TFTs with low processing temperatures have great potential in application for flexible electronics.

Performance Optimization of Atomic Layer Deposited ZnO Thin-Film Transistors by Vacuum Annealing

Highly Stable Atomic Layer Deposited Zinc Oxide Thin-Film Transistors Incorporating Triple O 2 Annealing

Performance Improvement of Atomic Layer-Deposited ZnO/Al2O3Thin-Film Transistors by Low-Temperature Annealing in Air

Influence of Annealing Temperatures on Solution-Processed Alinzno Thin Film Transistors

High-Performance ZnO Thin-Film Transistors Prepared by Atomic Layer Deposition

Influence of Post-Annealing on Electrical Characteristics of Thin-Film Transistors with Atomic-Layer-Deposited Zno-Channel/Al2o3-Dielectric

Mobility Enhancement and OFF Current Suppression in Atomic-Layer-Deposited ZnO Thin-Film Transistors by Post Annealing in O2

Effects of Annealing Process on Characteristics of Fully Transparent Zinc Tin Oxide Thin-Film Transistor

Studies on I-V performance enhancements of ZnO thin film transistors by vacuum treatments below 300°C

P‐1.12: Vacuum Annealing Treatment on High‐Performance AlZnO Thin Film Transistors

High-performance ZnO Thin-Film Transistors Prepared by Atomic Layer Deposition at Low Temperature

Evolution of Electrical Performance of Zno-Based Thin-Film Transistors by Low Temperature Annealing

Feasibility of Atomic Layer Deposited AlZrOx Film to Achieve High Performance and Good Stability of ZnSnO-TFT

Effect of Annealing Temperature on Electrical Properties of ZTO Thin-Film Transistors

Effect of Annealing Temperature on the Electrical Properties of ZnO Thin-Film Transistors

PERFORMANCE AND MICROSTRUCTURE ANALYSIS OF VACUUM ANNEALED ZoO THIN-FILM TRANSISTORS

High performance of ZnSnO thin-film transistors engineered by oxygen defect modulation

Enhanced Stability Performance of Transparent Ozone ALD ZnO Thin-Film Transistors with SiAlO X Dielectric

High-Performance Flexible ZnO Thin-Film Transistors by Atomic Layer Deposition

Microwave Annealing As a Low Thermal Budget Technique for ZnO Thin-Film Transistors Fabricated Using Atomic Layer Deposition

Defect Modification in Zninsno Transistor with Solution-Processed Al2o3 Dielectric by Annealing