Abstract:High-performance ZnO thin-film transistors (TFTs) have been successfully fabricated by atomic layer deposition (ALD) with a maximum temperature of 200 °C. The impacts of deposition and annealing temperature on the characteristics of devices were discussed. ZnO thin films show a (002) preferred orientation at the high growth temperature. The carrier concentrations of ZnO TFTs can be optimized by appropriate growth temperature and annealing treatments. Subthreshold swing (SS) and hysteresis windows of TFTs are improved after annealing in dry O<sub>2</sub> due to the reduction in traps at ZnO/SiO<sub>2</sub> interface or/and within the ZnO channel. The ZnO TFT deposited at 150 °C with 200 °C annealing in oxygen demonstrates excellent electrical characteristics with high saturation mobility <inline-formula> <tex-math notation="LaTeX">$\mu _{\text {sat}}$ </tex-math></inline-formula> of <inline-formula> <tex-math notation="LaTeX">$7.8 {\mathrm {cm}}^{\text {2}}\text{V}^{-\text {1}}\text{s}^{-\text {1}}$ </tex-math></inline-formula>, small SS of 127 mV/decade, high <inline-formula> <tex-math notation="LaTeX">${I}_{ \mathrm{\scriptscriptstyle ON}}/{I}_{ \mathrm{\scriptscriptstyle OFF}}$ </tex-math></inline-formula> of <inline-formula> <tex-math notation="LaTeX">$2.8 \times 10^{\text {9}}$ </tex-math></inline-formula>, and good contact between source/drain electrodes. The high-performance ZnO TFTs with low processing temperatures have great potential in application for flexible electronics.

Highly Stable Atomic Layer Deposited Zinc Oxide Thin-Film Transistors Incorporating Triple O 2 Annealing

Solution-Processed Zinc Oxide Thin-Film Transistors with a Low-Temperature Polymer Passivation Layer

Performance Optimization of Atomic Layer Deposited ZnO Thin-Film Transistors by Vacuum Annealing

Low-voltage Zinc Oxide Thin-Film Transistors with Solution-Processed Channel and Dielectric Layers below 150 °C

Feasibility of Atomic Layer Deposited AlZrOx Film to Achieve High Performance and Good Stability of ZnSnO-TFT

Stability Enhancement of Low Temperature Thin-Film Transistors with Atomic-Layer-Deposited Zno:Al Channels

Enhanced Stability Performance of Transparent Ozone ALD ZnO Thin-Film Transistors with SiAlOX Dielectric

Performance Improvement of Atomic Layer-Deposited ZnO/Al2O3Thin-Film Transistors by Low-Temperature Annealing in Air

Mobility Enhancement and OFF Current Suppression in Atomic-Layer-Deposited ZnO Thin-Film Transistors by Post Annealing in O2

High-Performance ZnO Thin-Film Transistors Prepared by Atomic Layer Deposition

Atomic Layer Deposition Deposited High Dielectric Constant (κ) ZrAlOx Gate Insulator Enabling High Performance ZnSnO Thin Film Transistors

An Oxidation-Last Annealing for Enhancing the Reliability of Indium-Gallium-zinc Oxide Thin-Film Transistors

Solution-processed Coplanar Top-Gate ZnInSnO Thin Film Transistors and Bias Stability

Performance and Stability of Amorphous Ingazno Thin Film Transistors with A Designed Device Structure

Effective encapsulation of ZnO thin film transistors controlled by thermal energy

High-Performance Transistors Based on Zinc Tin Oxides by Single Spin-Coating Process

High stability mechanisms of quinary indium gallium zinc aluminum oxide multicomponent oxide films and thin film transistors

Enhanced Performance of ZnO Thin-Film Transistors with ZnO Dual-Active-layer

The Effects of Post Annealing Process on the Electrical Performance and Stability of Al-Zn-O Thin-Film Transistors

Stability of Amorphous Inalzno Thin-Film Transistors

Influence of Post-Annealing on Electrical Characteristics of Thin-Film Transistors with Atomic-Layer-Deposited Zno-Channel/Al2o3-Dielectric