Abstract:With the growing need for large area display technology and the push for a faster and cheaper alternative to the current amorphous indium gallium zinc oxide (a-IGZO) as the active channel layer for pixel-driven thin film transistors (TFTs) display applications, gallium tin zinc oxide (GSZO) has shown to be a promising candidate due to the similar electronic configuration of Sn4+ and In3+. In this work TFTs of GSZO sputtered films with only a few atomic % of Ga and Sn have been fabricated. A systematic and detailed comparison has been made of the properties of the GSZO films annealed at two temperatures: 140 °C and 450 °C. The electrical and optical stabilities of the respective devices have been studied to gain more insight into the degradation mechanism and are correlated with the initial TFT performance prior to the application of stress. Post deposition annealing at 450 °C of the films in air was found to lead to a higher atomic concentration of Sn4+ in these films and a superior quality of the film, as attested by the higher film density and less surface and interface roughness in comparison to the lower annealed temperature device. These result in significantly reduced shallow and deep interface traps with improved performance of the device exhibiting VON of −3.5 V, ION/IOFF of 108, field-effect mobility (μFE) of 4.46 cm2 V−1s−1, and sub-threshold swing of 0.38 V dec−1. The device is stable under both electrical and optical bias for wavelengths of 550 nm and above. Thus, this work demonstrates GSZO-based TFTs as a promising viable option to the IGZO TFTs by further tailoring the film composition and relevant processing temperatures.

An Oxidation-Last Annealing for Enhancing the Reliability of Indium-Gallium-zinc Oxide Thin-Film Transistors

Highly Stable Atomic Layer Deposited Zinc Oxide Thin-Film Transistors Incorporating Triple O 2 Annealing

Influence of Annealing Temperatures on Solution-Processed Alinzno Thin Film Transistors

Cyclical Annealing Technique To Enhance Reliability of Amorphous Metal Oxide Thin Film Transistors

Atmosphere Effect in Post-Annealing Treatments for Amorphous InGaZnO Thin-Film Transistors with SiOx Passivation Layers

Thermal Annealing Improved Stability of Amorphous InGaZnO Thin-Film Transistors Under AC Bias Stresses

A Comparative Study on Fluorination and Oxidation of Indium–Gallium–Zinc Oxide Thin-Film Transistors

The Effects of Post Annealing Process on the Electrical Performance and Stability of Al-Zn-O Thin-Film Transistors

Improvement of Negative Bias Temperature Illumination Stability of Amorphous IGZO Thin-Film Transistors by Water Vapor-Assisted High-Pressure Oxygen Annealing

A Comparative Study on the Effects of Annealing on the Characteristics of Zinc Oxide Thin-Film Transistors With Gate-Stacks of Different Gas-Permeability

Discovering the Impact of Cooling Scheme During Annealing: A New Knob for Achieving Thermally Stable IGZO FETs

Effect of Atmosphere Dependent Annealing on the Electrical Characteristics of a-In2O3 Thin-film Transistors

P‐18: Student Poster: Non‐Oxidizing Pre‐Annealing for Enhanced Fluorination of an Indium‐Gallium‐Zinc Oxide Thin‐Film Transistor

Dependence of Annealing Temperatures on the Optimized Resistive Switching Behavior from Siox (X=1.3) Films

Stability Study of Indium Tungsten Oxide Thin-Film Transistors Annealed under Various Ambient Conditions

Subgap State Engineering Using Nitrogen Incorporation to Improve Reliability of Amorphous InGaZnO Thin-Film Transistors in Various Stressing Conditions

P-22: Turn-On Voltage Modulation of Indium-Gallium-Zinc-Oxide Thin-Film Transistors Through Thermal Annealing Processes

Enhanced Thermal Stability of Elevated-Metal Metal-Oxide Thin-Film Transistors via Low-Temperature Nitrogen Post-Annealing

The effect of annealing temperature on the stability of gallium tin zinc oxide thin film transistors

Influence of Post-Annealing on Electrical Characteristics of Thin-Film Transistors with Atomic-Layer-Deposited Zno-Channel/Al2o3-Dielectric

Dependence of Annealing on Stability of Transparent Amorphous InGaZnO Thin Film Transistor