Abstract:With the growing need for large area display technology and the push for a faster and cheaper alternative to the current amorphous indium gallium zinc oxide (a-IGZO) as the active channel layer for pixel-driven thin film transistors (TFTs) display applications, gallium tin zinc oxide (GSZO) has shown to be a promising candidate due to the similar electronic configuration of Sn4+ and In3+. In this work TFTs of GSZO sputtered films with only a few atomic % of Ga and Sn have been fabricated. A systematic and detailed comparison has been made of the properties of the GSZO films annealed at two temperatures: 140 °C and 450 °C. The electrical and optical stabilities of the respective devices have been studied to gain more insight into the degradation mechanism and are correlated with the initial TFT performance prior to the application of stress. Post deposition annealing at 450 °C of the films in air was found to lead to a higher atomic concentration of Sn4+ in these films and a superior quality of the film, as attested by the higher film density and less surface and interface roughness in comparison to the lower annealed temperature device. These result in significantly reduced shallow and deep interface traps with improved performance of the device exhibiting VON of −3.5 V, ION/IOFF of 108, field-effect mobility (μFE) of 4.46 cm2 V−1s−1, and sub-threshold swing of 0.38 V dec−1. The device is stable under both electrical and optical bias for wavelengths of 550 nm and above. Thus, this work demonstrates GSZO-based TFTs as a promising viable option to the IGZO TFTs by further tailoring the film composition and relevant processing temperatures.

Stability of Amorphous Inalzno Thin-Film Transistors

Influence of Annealing Temperatures on Solution-Processed Alinzno Thin Film Transistors

Annealing Treatment on Amorphous InAlZnO Films for Thin-Film Transistors

Highly Stable Atomic Layer Deposited Zinc Oxide Thin-Film Transistors Incorporating Triple O 2 Annealing

Thermal Annealing Improved Stability of Amorphous InGaZnO Thin-Film Transistors Under AC Bias Stresses

Stability Enhancement of Low Temperature Thin-Film Transistors with Atomic-Layer-Deposited Zno:Al Channels

Dependence of Annealing on Stability of Transparent Amorphous InGaZnO Thin Film Transistor

The Influence of Annealing Temperature on Amorphous Indium‐Zinc‐Tungsten Oxide Thin‐Film Transistors

Annealing Effect on Amorphous Indium-Zinc-Tungsten-Oxide Thin-Film Transistors

Performance and Stability of Amorphous Ingazno Thin Film Transistors with A Designed Device Structure

Enhanced Bias Stress Stability of A-Ingazno Thin Film Transistors by Inserting an Ultra-Thin Interfacial InGaZnO:N Layer

Stability of Low Temperature and Transparent Amorphous Ingazno Thin Film Transistor under Illumination

The effect of annealing temperature on the stability of gallium tin zinc oxide thin film transistors

Performance Improvement of Atomic Layer-Deposited ZnO/Al2O3Thin-Film Transistors by Low-Temperature Annealing in Air

Amorphous InZnSnO thin-film-transistors performance enhancement with low-energy Xenon Pulsed-light annealing

Scalability and Stability Enhancement in Self-Aligned Top-Gate Indium- Zinc-Oxide TFTs with Al Reacted Source/Drain

High-Performance Unannealed A-Ingazno Tft with an Atomic-Layer-Deposited Sio2 Insulator

Effect of Two-Step Annealing on High Stability of a-IGZO Thin-Film Transistor

Atmosphere Effect in Post-Annealing Treatments for Amorphous InGaZnO Thin-Film Transistors with SiOx Passivation Layers

Stablity research and application of amorphous indium gallium zinc oxide tfts for active matrix organic light-emitting diode display

Mobility and Stability Enhancement of Amorphous In-Ga-Zn-O TFTs with Atomic Layer Deposited Al2O3/SiO2Stacked Insulators