Abstract:Bottom‐gate thin‐film transistors (TFTs) with ITO‐stabilized ZnO channel layers were successfully fabricated by co‐sputtering of ZnO target and ITO target. We investigate the effects of the post‐deposition thermal annealing temperature on the defects inside of the ITO‐stabilized ZnO thin film and on the electrical performance of ITO‐stabilized ZnO TFTs. The beneficial effect of various annealing temperature appears because of a reorganization of the amorphous network with controlling the defect chemistry in the films indicated by photoluminescence analysis. ITO‐stabilized ZnO thin film with the annealing temperature of 300°C exhibited less intense defect emission peaks due to reduction in the number of vacancies and interstitials via filling the oxygen vacancies with O2, and diffusion of zinc interstitial to exact sites (VZn) of the system. Furthermore, We systematically investigated the impact of various annealing temperature on their performance characteristics. It was found that ITO‐stabilized ZnO TFT with annealing temperature of 300°C exhibited fairly high electrical characteristics, especially with a saturation field‐effect mobility of 27.4 cm2V−1s−1 and the threshold voltage as low as −0.64 V. The implied correlation between the post‐deposition thermal treatment and the characteristics of a transistor was investigated and demonstrated by photoluminescence analysis.

Annealing Effect on Amorphous Indium-Zinc-Tungsten-Oxide Thin-Film Transistors

The Influence of Annealing Temperature on Amorphous Indium‐Zinc‐Tungsten Oxide Thin‐Film Transistors

Influence of Annealing Temperatures on Solution-Processed Alinzno Thin Film Transistors

Effect of Annealing Temperature on Performance of Amorphous InWO Thin Film Transistors

Effects of Annealing Process on Characteristics of Fully Transparent Zinc Tin Oxide Thin-Film Transistor

Annealing effects on the performances of Bismuth-doped Indium Zinc Oxide thin-film transistors

Annealing Treatment on Amorphous InAlZnO Films for Thin-Film Transistors

Stability Study of Indium Tungsten Oxide Thin-Film Transistors Annealed under Various Ambient Conditions

Stability of Amorphous Inalzno Thin-Film Transistors

Effects of annealing temperature on properties of InSnZnO thin film transistors prepared by Co-sputtering.

Effect of Annealing Temperature on Electrical Properties of ZTO Thin-Film Transistors

Effects of Annealing Temperature on Electrical Properties of ZnO Thin-Film Transistors

Effect of Thermal Annealing on the Properties of Transparent Conductive In–Ga–Zn Oxide Thin Films

Effects of low-temperature (120 °C) annealing on the carrier concentration and trap density in amorphous indium gallium zinc oxide thin film transistors

Effect of Annealing Temperature on the Electrical Properties of ZnO Thin-Film Transistors

Performance enhancement of amorphous indium-zinc-oxide thin film transistors by microwave annealing

Effect Of Active Layer Deposition Temperature On The Performance Of Sputtered Amorphous In-Ga-Zn-O Thin Film Transistors

Rapid thermal annealing effect on performance variations of solution processed indium–gallium–zinc-oxide thin-film transistors

Effects of thermal annealing on the electrical characteristics of In-Ga-Zn-O thin-film transistors with Al2O3 gate dielectric

P‐1.2: Photoluminescence and Electrical Properties Study of ITO‐stabilized ZnO Thin‐Film Transistors with Different Annealing Temperatures

Dependence of Annealing on Stability of Transparent Amorphous InGaZnO Thin Film Transistor