Abstract:Indium-tin-zinc-oxide (ITZO) as the channel layer grown by co-sputtering of ZnO target and ITO target in the bottom gate thin-film transistors (TFTs) is proposed in this work. The microstructure and optical properties of ITZO thin films at different annealing temperatures were analyzed. The impact of various annealing temperatures on the ITZO TFT performance characteristics was systematically investigated as well. It was found that ITZO TFT with annealing temperature of 300 °C exhibits excellent electrical performance with a high saturation field-effect mobility (μ sat) of 27.4 cm2 V-1 s-1, a low threshold voltage (V th) of -0.64 V, a small subthreshold swing (SS) value of 0.23 V per decade, and the high on-off current ratio (I on/I off) of 1.8 × 107. In addition, it also shows good output curves including gate control capabilities and good electrode contact as well as extreme atmospheric stability. As shown by photoluminescence (PL) analysis and X-ray photoelectron spectroscopy (XPS) analysis, the beneficial effects of various annealing temperatures on device performance are attributed to the reorganization of the amorphous network and the control of defect chemistry in the films. The correlation between the post-deposition thermal treatment and the characteristics of a transistor was investigated and excellent performance of the transistor was demonstrated.

Influence Of Thermal Annealing On The Electrical Characteristics Of Doped Zinc Oxide Thin Film Transistors

Influence of Annealing Temperatures on Solution-Processed Alinzno Thin Film Transistors

Effects of Annealing Process on Characteristics of Fully Transparent Zinc Tin Oxide Thin-Film Transistor

Highly Stable Atomic Layer Deposited Zinc Oxide Thin-Film Transistors Incorporating Triple O 2 Annealing

Effects of thermal annealing on the electrical characteristics of In-Ga-Zn-O thin-film transistors with Al2O3 gate dielectric

Annealing effects on the performances of Bismuth-doped Indium Zinc Oxide thin-film transistors

The Influence of Annealing Temperature on Amorphous Indium‐Zinc‐Tungsten Oxide Thin‐Film Transistors

Annealing effects of In2O3 thin films on electrical properties and application in thin film transistors

Influence of Post-Annealing on Electrical Characteristics of Thin-Film Transistors with Atomic-Layer-Deposited Zno-Channel/Al2o3-Dielectric

Effect of Annealing Temperature on the Electrical Properties of ZnO Thin-Film Transistors

Annealing Effect on Amorphous Indium-Zinc-Tungsten-Oxide Thin-Film Transistors

A Comparative Study on the Effects of Annealing on the Characteristics of Zinc Oxide Thin-Film Transistors With Gate-Stacks of Different Gas-Permeability

Effects of annealing temperature on properties of InSnZnO thin film transistors prepared by Co-sputtering.

Effect of Annealing Temperature of Bi1.5Zn1.0Nb1.5O7gate Insulator on Performance of ZnO Based Thin Film Transistors

The Resistivity of Zinc Oxide under Different Annealing Configurations and Its Impact on the Leakage Characteristics of Zinc Oxide Thin-Film Transistors

Effect of Annealing Temperature on Electrical Properties of ZTO Thin-Film Transistors

Effect of annealing on characteristics of amorphous InGaZnO thin film transistors fabricated by sol-gel technical

Dependence of Annealing on Stability of Transparent Amorphous InGaZnO Thin Film Transistor

Effect Of Active Layer Deposition Temperature On The Performance Of Sputtered Amorphous In-Ga-Zn-O Thin Film Transistors

Effect of Thermal Annealing on the Properties of Transparent Conductive In–Ga–Zn Oxide Thin Films

Mobility Enhancement and OFF Current Suppression in Atomic-Layer-Deposited ZnO Thin-Film Transistors by Post Annealing in O2