Abstract:For high-speed and large-area active-matrix displays, metal-oxide thin-film transistors (TFTs) with high field-effect mobility, stability, and good uniformity are essential. Moreover, reducing the RC delay is also important to achieve high-speed operation, which is induced by the parasitic capacitance formed between the source/drain (S/D) and the gate electrodes. From this perspective, self-aligned top-gate oxide TFTs can provide advantages such as a low parasitic capacitance for high-speed displays due to minimized overlap between the S/D and the gate electrodes. Here, we demonstrate self-aligned top-gate oxide TFTs using a solution-processed indium-gallium-zinc-oxide (IGZO) channel and crosslinked poly(4-vinylphenol) (PVP) gate dielectric layers. By applying a selective Ar plasma treatment on the IGZO channel, low-resistance IGZO regions could be formed, having a sheet resistance value of ~20.6 kΩ/sq., which can act as the homojunction S/D contacts in the top-gate IGZO TFTs. The fabricated self-aligned top-gate IGZO TFTs exhibited a field-effect mobility of 3.93 cm2/Vs and on/off ratio of ~106, which are comparable to those fabricated using a bottom-gate structure. Furthermore, we also demonstrated self-aligned top-gate TFTs using electrospun indium-gallium-oxide (IGO) nanowires (NWs) as a channel layer. The IGO NW TFTs exhibited a field-effect mobility of 0.03 cm2/Vs and an on/off ratio of >105. The results demonstrate that the Ar plasma treatment for S/D contact formation and the solution-processed PVP gate dielectric can be implemented in realizing self-aligned top-gate oxide TFTs.

Scalability and Stability Enhancement in Self-Aligned Top-Gate Indium- Zinc-Oxide TFTs with Al Reacted Source/Drain

Influence of Annealing Temperatures on Solution-Processed Alinzno Thin Film Transistors

Self-Aligned Top-Gate Amorphous Zinc-Tin Oxide Thin-Film Transistor with Source/Drain Regions Doped by Al Reaction

Self-aligned Top-Gate Amorphous Oxide Thin-Film Transistors with IZO/IGZO Stacked Active Layer and Al Reacted Source/drain Region

40‐4: Invited Paper: Self‐Aligned Top‐Gate Amorphous In‐Ga‐Zn‐O Thin‐Film Transistors with Hafnium‐Induced Source/Drain Regions

37.3: Self‐Aligned Top‐Gate Amorphous ZnSnO Thin‐Film Transistor with Thermal‐Stable Al Reaction‐Doped Source/Drain

Mobility and Stability Enhancement of Amorphous In-Ga-Zn-O TFTs with Atomic Layer Deposited Al2O3/SiO2Stacked Insulators

Metal Reaction-Induced Bulk-Doping Effect in Forming Conductive Source-Drain Regions of Self-Aligned Top-Gate Amorphous InGaZnO Thin-Film Transistors.

Self-Aligned Top-Gate Metal-Oxide Thin-Film Transistors Using a Solution-Processed Polymer Gate Dielectric

High-Performance Self-Aligned Top-Gate Amorphous InGaZnO TFTs with 4 Nm-Thick Atomic-Layer-Deposited AlOx Insulator

A Simple Doping Process Achieved by Modifying the Passivation Layer for Self-Aligned Top-Gate In-Ga-Zn-O Thin-Film Transistors at 200 degrees C

High-performance a-ITZO TFTs with high bias stability enabled by self-aligned passivation using a-GaOx

Sub-100 Nm Self-Aligned Top-Gate Amorphous InGaZnO Thin-Film Transistors with Gate Insulator of 4 Nm Atomic-Layer-Deposited AlOx

A Simple Doping Process Achieved by Modifying the Passivation Layer for Self-Aligned Top-Gate In-Ga-Zn-O Thin-Film Transistors at 200 °C

Stability enhancement of top-gate self-aligned tin-doped indium gallium oxide thin film transistor by low temperature annealing

Improved Performance and Bias Stability of Al2O3/IZO Thin-Film Transistors with Vertical Diffusion

Fully Self-Aligned Homojunction Bottom-Gate Amorphous InGaZnO TFTs with Al Reacted Source/Drain Regions

Stablity research and application of amorphous indium gallium zinc oxide tfts for active matrix organic light-emitting diode display

High-Performance Amorphous InGaZnO Thin-Film Transistor Gated by HfAlOₓ Dielectric with Ultralow Subthreshold Swing

Deep Sub-Micron Self-Aligned Bottom-Gate Amorphous InGaZnO Thin-Film Transistors With Low-Resistance Source/Drain

Solution-processed Coplanar Top-Gate ZnInSnO Thin Film Transistors and Bias Stability