Abstract:High-performance ZnO thin-film transistors (TFTs) have been successfully fabricated by atomic layer deposition (ALD) with a maximum temperature of 200 °C. The impacts of deposition and annealing temperature on the characteristics of devices were discussed. ZnO thin films show a (002) preferred orientation at the high growth temperature. The carrier concentrations of ZnO TFTs can be optimized by appropriate growth temperature and annealing treatments. Subthreshold swing (SS) and hysteresis windows of TFTs are improved after annealing in dry O<sub>2</sub> due to the reduction in traps at ZnO/SiO<sub>2</sub> interface or/and within the ZnO channel. The ZnO TFT deposited at 150 °C with 200 °C annealing in oxygen demonstrates excellent electrical characteristics with high saturation mobility <inline-formula> <tex-math notation="LaTeX">$\mu _{\text {sat}}$ </tex-math></inline-formula> of <inline-formula> <tex-math notation="LaTeX">$7.8 {\mathrm {cm}}^{\text {2}}\text{V}^{-\text {1}}\text{s}^{-\text {1}}$ </tex-math></inline-formula>, small SS of 127 mV/decade, high <inline-formula> <tex-math notation="LaTeX">${I}_{ \mathrm{\scriptscriptstyle ON}}/{I}_{ \mathrm{\scriptscriptstyle OFF}}$ </tex-math></inline-formula> of <inline-formula> <tex-math notation="LaTeX">$2.8 \times 10^{\text {9}}$ </tex-math></inline-formula>, and good contact between source/drain electrodes. The high-performance ZnO TFTs with low processing temperatures have great potential in application for flexible electronics.

37.3: Self‐Aligned Top‐Gate Amorphous ZnSnO Thin‐Film Transistor with Thermal‐Stable Al Reaction‐Doped Source/Drain

Self-Aligned Top-Gate Amorphous Zinc-Tin Oxide Thin-Film Transistor with Source/Drain Regions Doped by Al Reaction

Implementation of Self-Aligned Top-Gate Amorphous Zinc Tin Oxide Thin-Film Transistors

Scalability and Stability Enhancement in Self-Aligned Top-Gate Indium- Zinc-Oxide TFTs with Al Reacted Source/Drain

Metal Reaction-Induced Bulk-Doping Effect in Forming Conductive Source-Drain Regions of Self-Aligned Top-Gate Amorphous InGaZnO Thin-Film Transistors.

40‐4: Invited Paper: Self‐Aligned Top‐Gate Amorphous In‐Ga‐Zn‐O Thin‐Film Transistors with Hafnium‐Induced Source/Drain Regions

High-Performance Self-Aligned Top-Gate Amorphous InGaZnO TFTs with 4 Nm-Thick Atomic-Layer-Deposited AlOx Insulator

Sub-100 Nm Self-Aligned Top-Gate Amorphous InGaZnO Thin-Film Transistors with Gate Insulator of 4 Nm Atomic-Layer-Deposited AlOx

Self-aligned Top-Gate Amorphous Oxide Thin-Film Transistors with IZO/IGZO Stacked Active Layer and Al Reacted Source/drain Region

Reactively-sputtered AlOx Passivation Layer for Self-Aligned Top-Gate Amorphous InGaZnO Thin-Film Transistors

Amorphous ZnAlSnO Thin-Film Transistors by a Combustion Solution Process for Future Displays

Feasibility of Atomic Layer Deposited AlZrOx Film to Achieve High Performance and Good Stability of ZnSnO-TFT

Deep Sub-Micron Self-Aligned Bottom-Gate Amorphous InGaZnO Thin-Film Transistors With Low-Resistance Source/Drain

Solution-processed Coplanar Top-Gate ZnInSnO Thin Film Transistors and Bias Stability

Stability Enhancement of Low Temperature Thin-Film Transistors with Atomic-Layer-Deposited Zno:Al Channels

Optimization of the ZTO/GI interface of Bottom-gate Amorphous ZnSnO Thin-Film Transistor

Sn-Doped Zno Thin-Film Transistors with Azo, Tzo and Al Heterojunction Source/Drain Contacts

Fully Self-Aligned Homojunction Bottom-Gate Amorphous InGaZnO TFTs with Al Reacted Source/Drain Regions

High-Performance Amorphous InGaZnO Thin-Film Transistor Gated by HfAlOₓ Dielectric with Ultralow Subthreshold Swing

P‐1.7: Self‐aligned Top‐gate a‐ZrInZnO Thin‐Film Transistors Fabricated by Cosputtering Technique

High-Performance ZnO Thin-Film Transistors Prepared by Atomic Layer Deposition