Abstract:We have studied processing and characteristics of flexible Aluminum-doped Zinc Oxide thin-film transistors (AZO TFTs) fabricated on plastic substrates using radio frequency (rf) magnetron sputtering. To improve the performance of flexible AZO TFT, we studied effects of device structures on characteristics of the aluminum-doped zinc oxide thin film transistors. The electrical properties of top-gate type and bottom-gate type AZO TFTs were investigated, respectively. The top-gate type AZO TFTs shows a threshold voltage of 1.4 V, a Ion/Ioff current ratio of 1.0×107, a field effect mobility of 28.2 cm2/ V•s, a subthreshold swing of 0.19 V/decade. And the bottom-gate type AZO TFTs shows a threshold voltage of 1.7 V, a Ion/Ioff ratio of 1.0×107, a field effect mobility of 209 cm2/ V•s, a subthreshold swing of 0.16 V/decade, and the off current of less than 10-11A at room temperature. Both TFTs show low threshold voltage, high Ion/Ioff ratio and high field effect mobility. By comparison, the bottom-gate type AZO TFTs shows better characteristics. The flexible AZO-TFT is a very promising low-cost optoelectronic device for the next generation of invisible and flexible electronics due to flexible, transparency, high mobility, and low-temperature processing.

P‐1.7: Self‐aligned Top‐gate a‐ZrInZnO Thin‐Film Transistors Fabricated by Cosputtering Technique

Solution-processed Coplanar Top-Gate ZnInSnO Thin Film Transistors and Bias Stability

Self-Aligned Top-Gate Amorphous Zinc-Tin Oxide Thin-Film Transistor with Source/Drain Regions Doped by Al Reaction

A Simple Doping Process Achieved by Modifying the Passivation Layer for Self-Aligned Top-Gate In-Ga-Zn-O Thin-Film Transistors at 200 degrees C

P‐1.5: Fabrication of Self‐Aligned Top‐Gate Amorphous InGaZnO Thin‐Film Transistors with Submicron Channel Length

A Simple Doping Process Achieved by Modifying the Passivation Layer for Self-Aligned Top-Gate In-Ga-Zn-O Thin-Film Transistors at 200 °C

P‐1.7: Atomic‐Layer‐Deposition Deposited Superlattice‐Structure Al‐Zn‐O Films for Thin Film Transistors Application

Implementation of Self-Aligned Top-Gate Amorphous Zinc Tin Oxide Thin-Film Transistors

37.3: Self‐Aligned Top‐Gate Amorphous ZnSnO Thin‐Film Transistor with Thermal‐Stable Al Reaction‐Doped Source/Drain

High-Performance Flexible Tin-Zinc-Oxide Thin-Film Transistors Fabricated on Plastic Substrates

Scalability and Stability Enhancement in Self-Aligned Top-Gate Indium- Zinc-Oxide TFTs with Al Reacted Source/Drain

High-Performance Transistors Based on Zinc Tin Oxides by Single Spin-Coating Process

Solution-Processed Low-Operating-Voltage Thin-Film Transistors with Bottom-Gate Top-Contact Structure

Titanium Doped Zinc Oxide Thin Film Transistors Fabricated by Cosputtering Technique

High-performance Al-Zn-O Thin-Film Transistors Sputtering at Different Power

High Performance Rf Sputtering Deposited Zno Thin-Film Transistors

Sub-100 Nm Self-Aligned Top-Gate Amorphous InGaZnO Thin-Film Transistors with Gate Insulator of 4 Nm Atomic-Layer-Deposited AlOx

Solution-processed High Stability Top-Gate W and F Co-Doped ZnSnO Thin Film Transistors

P‐1.8: High Performance ZnO Thin Film Transistors on Flexible Substrate with Process Temperature No More Than 100 °C

Self-aligned Top-Gate Amorphous Oxide Thin-Film Transistors with IZO/IGZO Stacked Active Layer and Al Reacted Source/drain Region

High-Performance Amorphous InGaZnO Thin Film Transistor With High-k Van Der Waals Molecular Dielectric