Abstract:We prepared amorphous indium–gallium–zinc oxide (a-IGZO) thin films with various Ga content ratios and investigated their feasibility as the active channel layers of top-gate thin-film transistors (TFT). First, the 2-inch IGZO sputtering targets with stoichiometric ratios of InGaZn2O5, InGaZnO4, and InGa2ZnO5.5 were fabricated using In2O3, Ga2O3, and ZnO oxide powders as raw materials via sintering treatments at temperatures ranging from 900 °C to 1300 °C for 6 h or 8 h. X-ray diffraction analysis indicated that the InGaZn2O5 and InGaZnO4 targets are single-phase structures whereas the InGa2ZnO5.5 target is a two-phase structure. Hall effect measurement indicated that the a-InGaZn2O5 and a-InGaZnO4 layers possess a carrier concentration (N) of about 1019 cm−3 and a resistivity (ρ) of about 10−2 Ω·cm; however, the N of the a-InGa2ZnO5.5 layer is only 1017 cm−3, and the ρ is about 1 to 4 Ω·cm. Moreover, the a-InGaZn2O5 layer exhibited the highest Hall-effect mobility (μHall) of 21.17 cm2·V−1·sec−1. This indicated that the impedance of Ga3+ ions to carrier migration is the main factor affecting the electrical properties of a-IGZO layers. Ga content in the a-IGZO channel similarly affects the performance of the TFT devices prepared in this study. The annealing at 300 °C for 1 h in an ambient atmosphere was found to significantly improve the electrical properties of the TFT devices. The best performance was observed in the a-InGaZnO4 TFT sample subjected to post-annealing at 300 °C with Vth = −0.85 V, μFE = 8.46 cm2, V−1·sec−1, SS = 2.31, V·decade−1, and Ion/Ioff = 2.9 × 104.

P‐1.5: Fabrication of Self‐Aligned Top‐Gate Amorphous InGaZnO Thin‐Film Transistors with Submicron Channel Length

Sub-100 Nm Self-Aligned Top-Gate Amorphous InGaZnO Thin-Film Transistors with Gate Insulator of 4 Nm Atomic-Layer-Deposited AlOx

P-1.14: The Influence of Dual-channel on the Performance of Self-Align Top-Gate IGZO Thin Film Transistors

Deep Sub-Micron Self-Aligned Bottom-Gate Amorphous InGaZnO Thin-Film Transistors With Low-Resistance Source/Drain

A Simple Doping Process Achieved by Modifying the Passivation Layer for Self-Aligned Top-Gate In-Ga-Zn-O Thin-Film Transistors at 200 °C

A Simple Doping Process Achieved by Modifying the Passivation Layer for Self-Aligned Top-Gate In-Ga-Zn-O Thin-Film Transistors at 200 degrees C

Scalability and Stability Enhancement in Self-Aligned Top-Gate Indium- Zinc-Oxide TFTs with Al Reacted Source/Drain

Enhancing Reliability of Short-channel Dual gate InGaZnO Thin Film Transistors by Bottom-gate Oxide Engineering

Top-Gate Short Channel Amorphous Indium-Gallium-Zinc-Oxide Thin Film Transistors With Sub-1.2 nm Equivalent Oxide Thickness

Amorphous InGaZnO Thin-Film Transistors With Sub-10-nm Channel Thickness and Ultrascaled Channel Length

Amorphous In-Ga-Zn-O Thin-Film Transistors Fabricated by Microcontact Printing

Fully Self-Aligned Homojunction Bottom-Gate Amorphous InGaZnO TFTs with Al Reacted Source/Drain Regions

P‐1.23: High‐Performance Dual‐Gate A‐igzo/a‐izo Thin‐Film Transistors

Self-Aligned Top-Gate Amorphous InGaZnO TFTs with Plasma Enhanced Chemical Vapor Deposited Sub-10 Nm SiO2 Gate Dielectric for Low-Voltage Applications

Self-Aligned Top-Gate Metal-Oxide Thin-Film Transistors Using a Solution-Processed Polymer Gate Dielectric

P‐1.7: Self‐aligned Top‐gate a‐ZrInZnO Thin‐Film Transistors Fabricated by Cosputtering Technique

The Fabrication of Indium–Gallium–Zinc Oxide Sputtering Targets with Various Gallium Contents and Their Applications to Top-Gate Thin-Film Transistors

Performances of Self-Aligned Top-Gate A-Igzo TFTs with Ultrathin PECVD SiO2 Gate Dielectric

Self-Aligned Top-Gate IGZO TFT with Stepped Structure for Suppressing Short Channel Effect

Indium–Gallium–Zinc–Oxide Thin-Film Transistors Based on Homojunctioned Structure Fabricated with a Self-Aligned Process