Abstract:High-performance thin-film transistors (TFTs) with amorphous indium gallium zinc oxide (IGZO)/Ga2O3 heterojunction and the reference TFTs with single-layer IGZO, Ga2O3, and stacked IGZO/Al2O3 layers are fabricated by sputtering. The as-deposited IGZO/Ga2O3 TFT shows high ON current of $0.97\,\,\mu \text{A}\cdot \mu \text{m}^{-{1}}$ at a drain voltage of 1 V, which is 7 orders of magnitude higher than that of the reference single layer TFTs and high mobility of 22.2 cm ${}^{{2}}{\cdot }\text{V}^{-{1}}{\cdot }\text{s}^{-{1}}$ , which is twice of that of the reference as-deposited IGZO/Al2O3 TFT (11.5 cm ${}^{{2}}{\cdot }\text{V}^{-{1}}{\cdot }\text{s}^{-{1}}$ ). Combining such superior conductivity of the IGZO/Ga2O3 TFT with the energy-level alignment, it indicates quasi-two-dimensional electron gas existed at the interface originated from the electrons confined in the potential well of IGZO. After annealing in air atmosphere, the IGZO/Ga2O3 TFT shows an effective gate modulation with high current ON/ OFF ratio of 1.2 $\times \,\,10^{{7}}$ and high mobility of 15.8 cm ${}^{{2}}{\cdot }\text{V}^{-{1}}\cdot \text{s}^{-{1}}$ comparing with that of the reference annealed IGZO/Al2O3 TFT (11.5 cm ${}^{{2}}{\cdot }\text{V}^{-{1}}{\cdot }\text{s}^{-{1}}$ ). In addition, the bias stability of the annealed IGZO/Ga2O3 TFT is enhanced due to the interface passivation. Our results indicate that amorphous IGZO/Ga2O3 heterostructure is an effective way to achieve high-mobility and stable TFTs, which have great potential in low-cost, large-area, and flexible high-definition displays.

High-Performance Amorphous InGaZnO Thin-Film Transistor Gated by HfAlOₓ Dielectric with Ultralow Subthreshold Swing

High-Performance Indium-Gallium-Zinc-Oxide Thin-Film Transistors with Stacked Al<sub>2</sub>O<sub>3</sub>/HfO<sub>2</sub> Dielectrics

High-performance IGZO-based TFTs with Stacked Al<sub>2</sub>O<sub>3</sub>/HfO<sub>2</sub> Dielectrics

High Performance and Hysteresis-Free a-IGZO Thin Film Transistors Based on Spin-coated Hafnium Oxide Gate Dielectrics

High-Performance of InGaZnO TFTs With an Ultrathin 5-nm Al₂O₃ Gate Dielectric Enabled by a Novel Atomic Layer Deposition Method

High-Performance of InGaZnO TFTs With an Ultrathin 5-nm Al2O3 Gate Dielectric Enabled by a Novel Atomic Layer Deposition Method

High-Performance Amorphous InGaZnO Thin Film Transistor With High-k Van Der Waals Molecular Dielectric

High-Performance of InGaZnO TFTs With an Ultrathin 5-nm Al<sub>2</sub>O<sub>3</sub> Gate Dielectric Enabled by a Novel Atomic Layer Deposition Method

High-Performance A-Ingazno Thin-Film Transistors with Extremely Low Thermal Budget by Using a Hydrogen-Rich Al2O3 Dielectric

High-Performance Fully Thermal ALD-Processed IGZO Thin Film Transistors

High-Performance Unannealed A-Ingazno Tft with an Atomic-Layer-Deposited Sio2 Insulator

Sub-100 Nm Self-Aligned Top-Gate Amorphous InGaZnO Thin-Film Transistors with Gate Insulator of 4 Nm Atomic-Layer-Deposited AlOx

High-Performance Thin-Film Transistors with Sputtered IGZO/Ga₂O₃ Heterojunction

Half-volt Operation of IGZO Thin-Film Transistors Enabled by Ultrathin HfO2 Gate Dielectric

High-Performance Self-Aligned Top-Gate Amorphous InGaZnO TFTs with 4 Nm-Thick Atomic-Layer-Deposited AlOx Insulator

Room-Temperature-Processed Flexible Amorphous InGaZnO Thin Film Transistor.

High-Performance Amorphous Indium Gallium Zinc Oxide Thin-Film Transistors with $\hbox{hfo}_{x}\hbox{n}_{y}/\hbox{hfo}_{2}/\hbox{hfo}_{x}\hbox{n}_{y}$ Tristack Gate Dielectrics

Low Voltage Operation of IGZO Thin Film Transistors Enabled by Ultrathin Al2O3 Gate Dielectric

Ultra-thin top-gate insulator of atomic-layer-deposited HfO x for amorphous InGaZnO thin-film transistors

Balanced Performance Improvement Of A-Ingazno Thin-Film Transistors Using Ald-Derived Al2o3-Passivated High-K Hfgdox Dielectrics

Ultra-thin Top-Gate Insulator of Atomic-Layer-deposited HfOx for Amorphous InGaZnO Thin-Film Transistors