Abstract:Amorphous oxide semiconductors, especially indium gallium zinc oxide (IGZO), have been widely studied and obtained significant progress in flexible thin-film transistors (TFTs) due to the high carrier mobility and low deposition temperature. However, a further annealing step is generally required to activate electrical properties and improve the device performance, which limited their applications in flexible electronics. In this study, we achieved flexible TFTs and arrays using co-sputtered IGZO and indium tin oxide (ITO) as channels deposited at room temperature without post-annealing. It was found that better transistor switching properties could be effectively achieved by regulating the sputtering power of ITO in the co-sputtered deposition. The device performance is comparable to that of the conventional oxide TFTs with high annealing temperatures (≥300 °C), exhibiting a high saturation mobility (μsat) of 15.3 cm 2 V -1 s -1 , a small subthreshold swing (SS) of 0.21 V dec -1 , and a very high on-off ratio (Ion/off) of 10 11 . In addition, a 12 × 12 flexible TFT array was achieved with uniform performance owing to the low-temperature processing advantage of this technique. The flexible TFTs exhibited robust mechanical flexibility with a minimum bending radius of 5 mm and bending cycles up to 1000. Furthermore, an inverter based on co-sputtered IGZO and ITO was demonstrated with the maximum gain of 22. All these achievements based on the proposed TFTs without post-annealing process are expected to promote the applications in advanced flexible displays and large-area integrated circuits.

Room-Temperature-Processed Flexible Amorphous InGaZnO Thin Film Transistor.

All-Sputtered, Flexible, Bottom-Gate Igzo/Al2o3 Bi-Layer Thin Film Transistors on Pen Fabricated by A Fully Room Temperature Process

Fabrication of Flexible Amorphous Indium-Gallium-Zinc-Oxide Thin-Film Transistors by a Chemical Vapor Deposition-Free Process on Polyethylene Napthalate

High-Performance Amorphous InGaZnO Thin-Film Transistor Gated by HfAlOₓ Dielectric with Ultralow Subthreshold Swing

Room-temperature fabrication of flexible gallium-doped zinc oxide thin-film transistors on plastic substrates

Room-temperature fabrication of flexible oxide TFTs by co-sputtering of IGZO and ITO

Facile Room Temperature Routes to Improve Performance of IGZO Thin-Film Transistors by an Ultrathin Al2O3 Passivation Layer

Highly Bendable In-Ga-ZnO Thin Film Transistors by Using a Thermally Stable Organic Dielectric Layer

Self-aligned Indium–gallium–zinc Oxide Thin-Film Transistors with SiNx/SiO2/SiNx/SiO2 Passivation Layers

Flexible Dual-layer Channel Gallium-doped ZnO Thin-film Transistors Fabricated on Plastic Substrates at Room Temperature

High-Performance Flexible a-IGZO TFTs Adopting Stacked Electrodes and Transparent Polyimide-Based Nanocomposite Substrates

Self-aligned Top-Gate InGaZnO Thin Film Transistors Using SiO2/Al2O3 Stack Gate Dielectric

All-sputtered, flexible, bottom-gate IGZO/Al 2 O 3 bi-layer thin film transistors on PEN fabricated by a fully room temperature process

A-Ingazno Thin-Film Transistor with Non-Vacuum Processed InGaZnO/AlOx Gate Dielectric Stack

DC and AC Performance of InGaZnO Thin-Film Transistors on Flexible PEEK Substrate

Transparent Flexible IGZO Thin Film Transistors Fabricated at Room Temperature

High-Performance A-Ingazno Thin-Film Transistors with Extremely Low Thermal Budget by Using a Hydrogen-Rich Al2O3 Dielectric

Self-Aligned Indium–Gallium–Zinc Oxide Thin-Film Transistor with Phosphorus-Doped Source/Drain Regions

Room-temperature fabrication of transparent flexible thin-film transistors using amorphous oxide semiconductors

Flexible electric-double-layer thin film transistors based on a vertical InGaZnO 4 channel

Flexible IGZO Thin-Film Transistors and Inverter Circuits with Diode-Connected Transistors Fabricated on Transparent Polyimide Substrates