Abstract:Solution-processed high-kappa gate dielectrics, such as Al2O3 and HfO2, show great potential for use in low-cost electronics. However, high-temperature treatments are generally needed to cure the film, limiting the use in flexible electronics. Here we use anodization, a simple, low-cost, solution-based method, to form thin, conformal, high quality HfOx layers at room temperature. Several anodization voltages were studied, and the relative quantity of Hf-O bonding was found to increase by 10% when increasing anodization voltage from 2 to 3 V, while maintaining almost the same when further increasing the anodization voltage. Conduction mechanisms were analyzed, showing that Schottky emission dominates even for the thinnest oxides. HfOx layers formed by anodization voltages of 2, 3, and 4 V show high capacitance density of 1290, 1160, and 1060 nF/cm(2), which are equivalent to 2.68, 2.97, and 3.26 nm of thermally grown SiO2. Using such high capacitance density insulators, we fabricated InGaZnO (IGZO) thin-film transistors (TFTs) at room temperature, showing a low operating voltage of 0.5 V, one of the lowest for oxide-semiconductor-based TFTs. TFTs gated with HfOx anodized at the optimal voltage, 3 V, show a high current on/off ratio of >10(5), a mobility approaching 10 cm(2)/(V s), and a subthreshold swing as low as 69 mV/dec, close to the theoretical limit at 300 K. The interface trap density was found to be highly related to the quality of the HfOx film, showing a 50% decrease with the increase of anodization voltage from 2 to 3 V. The devices show negligible change after storage in air for 6 months and favorable stability under both positive and negative gate bias stress. Finally, we demonstrate TFTs on plastic substrates, maintaining high quality performance even under a bending radius of 9 mm. As a result, such devices have potential applications in low-cost, low-voltage-operation, low-power electronics.

High Performance and Hysteresis-Free a-IGZO Thin Film Transistors Based on Spin-coated Hafnium Oxide Gate Dielectrics

Half-volt Operation of IGZO Thin-Film Transistors Enabled by Ultrathin HfO2 Gate Dielectric

High-Performance Amorphous InGaZnO Thin-Film Transistor Gated by HfAlOₓ Dielectric with Ultralow Subthreshold Swing

High-Performance A-Ingazno Thin-Film Transistors with Extremely Low Thermal Budget by Using a Hydrogen-Rich Al2O3 Dielectric

High-Performance Indium-Gallium-Zinc-Oxide Thin-Film Transistors with Stacked Al<sub>2</sub>O<sub>3</sub>/HfO<sub>2</sub> Dielectrics

High-Performance Amorphous Indium Gallium Zinc Oxide Thin-Film Transistors with $\hbox{hfo}_{x}\hbox{n}_{y}/\hbox{hfo}_{2}/\hbox{hfo}_{x}\hbox{n}_{y}$ Tristack Gate Dielectrics

High-performance IGZO-based TFTs with Stacked Al<sub>2</sub>O<sub>3</sub>/HfO<sub>2</sub> Dielectrics

Low Voltage Operation of IGZO Thin Film Transistors Enabled by Ultrathin Al2O3 Gate Dielectric

Low-Voltage a-InGaZnO Thin-Film Transistors With Anodized Thin HfO 2 Gate Dielectric

Sputtering-Deposited Hafnium Oxide Dielectric for High-Performance InGaZnO Thin Film Transistors

Interface scattering dominated carrier transport in hysteresis-free amorphous InGaZnO thin film transistors with high-<i>k</i> HfAlO gate dielectrics by atom layer deposition

High-Voltage Amorphous InGaZnO Thin-Film Transistors With ITO-Modulated Offset Region

High-Performance Amorphous InGaZnO Thin Film Transistor With High-k Van Der Waals Molecular Dielectric

Ultra-thin top-gate insulator of atomic-layer-deposited HfO x for amorphous InGaZnO thin-film transistors

High-Performance Thin-Film Transistors with Sputtered IGZO/Ga₂O₃ Heterojunction

Solution-Processed HfOx for Half-Volt Operation of InGaZnO Thin-Film Transistors

Ultra-thin Top-Gate Insulator of Atomic-Layer-deposited HfOx for Amorphous InGaZnO Thin-Film Transistors

High-Performance Unannealed A-Ingazno Tft with an Atomic-Layer-Deposited Sio2 Insulator

Effect of HfO2-Based Multi-Dielectrics on Electrical Properties of Amorphous In-Ga-Zn-O Thin Film Transistors

High-Performance of InGaZnO TFTs With an Ultrathin 5-nm Al₂O₃ Gate Dielectric Enabled by a Novel Atomic Layer Deposition Method

High Mobility Thin-Film Transistor with Solution-Processed Hafnium-Oxide Dielectric and Zinc-Indium-Tin-Oxide Semiconductor