Abstract:High-speed operation and low-power-consumption requirements have accelerated the development of thin-film transistors (TFTs) with exploration of gate dielectrics. In this work, the integration of all-sputtering-derived HfGdO high-k gate dielectrics with amorphous InGaZnO (a-InGaZnO) films has been reported, yielding significant improvements in the performance of a-InGaZnO TFTs. By adjusting the multilayer dielectric sequence, TFT device performance can be precisely manipulated. It has been detected that a-InGaZnO TFTs with an optimized Al2O3/HfGdO dielectric configuration have demonstrated superior electrical performance, including a high field-effect mobility (μFE) of 23.3 cm2·V–1·S–1, a large on/off current ratio of 1.2 × 107, a low subthreshold swing of 0.09 V/dec, and good stability under bias stress. Finally, a low-voltage-operated resistor-loaded unipolar inverter has been assembled on the base of Al2O3/HfGdO/a-InGaZnO TFTs, demonstrating full swing characteristics and high gain of ∼20. All of the experimental results indicate promising potentials for all-sputtering-derived Al2O3/HfGdO laminated dielectrics toward the achievement of low-cost, low-power-consumption, and large-area all-oxide optoelectronics.The Supporting Information is available free of charge at <a class="ext-link" href="/doi/10.1021/acsaelm.0c00763?goto=supporting-info">https://pubs.acs.org/doi/10.1021/acsaelm.0c00763</a>.O 1s XPS spectra of the HGO film deposited at various oxygen partial pressure ratios; content percentages of O I, O II, and O III in HGO films deposited at various oxygen partial pressure ratios; leakage current curves of HGO films at various oxygen partial pressure ratios and annealing temperatures; X-ray diffraction (XRD) patterns of HGO films annealed at different temperatures; output and transfer characteristics of α-IGZO TFTs with different gate dielectrics; capacitance density vs. frequency curves of HA, AH, AHA, and Al2O3; output and transfer characteristics of α-IGZO/AH TFTs with different Al2O3 passivation-layer thicknesses; capacitance density vs. frequency curves of AH-3 nm, AH-6 nm, and AH-11 nm; characteristic parameters of the resistor-loaded inverter prepared by AH-6 nm TFT at different VDD (<a class="ext-link" href="/doi/suppl/10.1021/acsaelm.0c00763/suppl_file/el0c00763_si_001.pdf">PDF</a>)This article has not yet been cited by other publications.

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