Abstract:Highlights A stable laminated Al 2 O 3 /HfO 2 insulator is developed by atomic layer deposition at a relatively lower temperature of 150 °C. The flexible thin-film transistors (TFTs) with bottom-gate top-contacted configuration are fabricated on a flexible substrate with the Al 2 O 3 /HfO 2 insulator. The flexible TFTs present the carrier mobilities of 9.7 cm 2 V −1 s −1 , ON/OFF ratio of ~ 1.3 × 10 6 , subthreshold voltage of 0.1 V, saturated current up to 0.83 mA, and subthreshold swing of 0.256 V dec −1 . Flexible thin-film transistors (TFTs) have attracted wide interest in the development of flexible and wearable displays or sensors. However, the conventional high processing temperatures hinder the preparation of stable and reliable dielectric materials on flexible substrates. Here, we develop a stable laminated Al 2 O 3 /HfO 2 insulator by atomic layer deposition at a relatively lower temperature of 150 °C. A sputtered amorphous indium-gallium-zinc oxide (IGZO) with the stoichiometry of In 0.37 Ga 0.20 Zn 0.18 O 0.25 is used as the active channel material. The flexible TFTs with bottom-gate top-contacted configuration are further fabricated on a flexible polyimide substrate with the Al 2 O 3 /HfO 2 nanolaminates. Benefited from the unique structural and compositional configuration in the nanolaminates consisting of amorphous Al 2 O 3 , crystallized HfO 2 , and the aluminate Al–Hf–O phase, the as-prepared TFTs present the carrier mobilities of 9.7 cm 2 V −1 s −1 , ON/OFF ratio of ~ 1.3 × 10 6 , subthreshold voltage of 0.1 V, saturated current up to 0.83 mA, and subthreshold swing of 0.256 V dec −1 , signifying a high-performance flexible TFT, which simultaneously able to withstand the bending radius of 40 mm. The TFTs with nanolaminate insulator possess satisfactory humidity stability and hysteresis behavior in a relative humidity of 60–70%, a temperature of 25–30 °C environment. The yield of IGZO-based TFTs with the nanolaminate insulator reaches 95%.

Oxide-Semiconductor-Based TFTs for Displays and Flexible Electronics

High-Performance Flexible a-IGZO TFTs Adopting Stacked Electrodes and Transparent Polyimide-Based Nanocomposite Substrates

Flexible IGZO Thin-Film Transistors and Inverter Circuits with Diode-Connected Transistors Fabricated on Transparent Polyimide Substrates

Room-temperature fabrication of flexible oxide TFTs by co-sputtering of IGZO and ITO

Self-aligned Indium–gallium–zinc Oxide Thin-Film Transistors with SiNx/SiO2/SiNx/SiO2 Passivation Layers

High-performance IGZO-based TFTs with Stacked Al<sub>2</sub>O<sub>3</sub>/HfO<sub>2</sub> Dielectrics

Oxide TFT with multilayer gate insulator for backplane of AMOLED device

Sub-Micron Oxide TFT for the Era of Oxide-Based Display

5-Inch Amoled Driven By High Stability In-Zn-Oxide Thin-Film Transistors

Bendable metal oxide thin-film transistors and circuits for analog electronics applications

Al2O3/HfO2 Nanolaminate Dielectric Boosting IGZO-Based Flexible Thin-Film Transistors

Flexible Amorphous Oxide Thin-Film Transistors on Polyimide Substrate for AMOLED

Stablity research and application of amorphous indium gallium zinc oxide tfts for active matrix organic light-emitting diode display

Fabrication of Flexible Amorphous Indium-Gallium-Zinc-Oxide Thin-Film Transistors by a Chemical Vapor Deposition-Free Process on Polyethylene Napthalate

81‐4: High Performance Coplanar Polycrystalline InGaO TFTs on Polyimide Substrate for Foldable AMOLED Display

All-Sputtered, Flexible, Bottom-Gate Igzo/Al2o3 Bi-Layer Thin Film Transistors on Pen Fabricated by A Fully Room Temperature Process

P‐25: A 2‐inch AMOLED Display Using In‐Zn‐Oxide TFTs with Anodized Al2O3 Gate Insulator

Growth of IZO/IGZO Dual-Active-layer for Low-Voltage-drive and High-Mobility Thin Film Transistors Based on an ALD Grown Al2O3 Gate Insulator

Room-Temperature-Processed Flexible Amorphous InGaZnO Thin Film Transistor.

Flexible IZO Homojunction TFTs with Graphene Oxide/Chitosan Composite Gate Dielectrics on Paper Substrates

Self-Aligned Top-Gate Metal-Oxide Thin-Film Transistors Using a Solution-Processed Polymer Gate Dielectric