Abstract:Amorphous indium-gallium-zinc oxide (a-IGZO) has become a standard channel ingredient of switching/driving transistors in active-matrix organic light-emitting diode (AMOLED) televisions. However, mobile AMOLED displays with a high pixel density (≥500 pixels per inch) and good form factor do not often employ a-IGZO transistors due to their modest mobility (10-20 cm2/(V s)). Hybrid low-temperature polycrystalline silicon and oxide transistor (LTPO) technology is being adapted in high-end mobile AMOLED devices due to its ultralow power consumption and excellent current drivability. The critical issues of LTPO (including a complicated structure and high fabrication costs) require a search for alternative all-oxide thin-film transistors (TFTs) with low-cost processability and simple device architecture. The atomic layer deposition (ALD) method is a promising route for high-performance all-oxide TFTs due to its unique features, such as in situ cation composition tailoring ability, precise nanoscale thickness controllability, and excellent step coverage. Here, we report an in-depth comparative investigation of TFTs with indium-gallium oxide (IGO)/gallium-zinc oxide (GZO) and indium-zinc oxide (IZO)/GZO heterojunction stacks using an ALD method. IGO and IZO layers with different compositions were tested as a confinement layer (CL), whereas the GZO layer was used as a barrier layer (BL). Optimal IGO/GZO and IZO/GZO channels were carefully designed on the basis of their energy band properties, where the formation of a quasi-two-dimensional electron gas (q2DEG) near the CL/BL interface is realized by rational design of the band gaps and work-functions of the IGO, IZO, and GZO thin films. To verify the effect of q2DEG formation, the device performances and stabilities of TFTs with CL/BL oxide heterojunction stacks were examined and compared to those of TFTs with a single CL layer. The optimized device with the In0.75Zn0.25O/Ga0.80Zn0.20O stack showed remarkable electrical performance: μFE of 76.7 ± 0.51 cm2/(V s), VTH of -0.37 ± 0.19 V, SS of 0.13 ± 0.01 V/dec, and ION/OFF of 2.5 × 1010 with low operation voltage range of ≥2 V and excellent stabilities (ΔVTH of +0.35, -0.67, and +0.08 V for PBTS, NBIS, and CCS, respectively). This study suggests the feasibility of using high-performance ALD-derived oxide TFTs (which can compete with the performance of LTPO transistors) for high-end mobile AMOLED displays.

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High-Performance of InGaZnO TFTs With an Ultrathin 5-nm Al₂O₃ Gate Dielectric Enabled by a Novel Atomic Layer Deposition Method

High-Performance Amorphous InGaZnO Thin-Film Transistor Gated by HfAlOₓ Dielectric with Ultralow Subthreshold Swing

High-Performance of InGaZnO TFTs With an Ultrathin 5-nm Al2O3 Gate Dielectric Enabled by a Novel Atomic Layer Deposition Method

High-Performance of InGaZnO TFTs With an Ultrathin 5-nm Al<sub>2</sub>O<sub>3</sub> Gate Dielectric Enabled by a Novel Atomic Layer Deposition Method

High-Performance Thin-Film Transistors with Sputtered IGZO/Ga₂O₃ Heterojunction

Growth of IZO/IGZO Dual-Active-layer for Low-Voltage-drive and High-Mobility Thin Film Transistors Based on an ALD Grown Al2O3 Gate Insulator

Implementation of sub-100 nm vertical channel-all-around (CAA) thin-film transistor using thermal atomic layer deposited IGZO channel

High-performance IGZO-based TFTs with Stacked Al<sub>2</sub>O<sub>3</sub>/HfO<sub>2</sub> Dielectrics

Comparative Study of Atomic Layer Deposited Indium-Based Oxide Transistors with a Fermi Energy Level-Engineered Heterojunction Structure Channel through a Cation Combinatorial Approach

High-Performance A-Ingazno Thin-Film Transistors with Extremely Low Thermal Budget by Using a Hydrogen-Rich Al2O3 Dielectric

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High Performance Indium‐Gallium‐Zinc Oxide Thin Film Transistor via Interface Engineering

High-quality indium–gallium–zinc oxide films synthesized by atomic layer deposition using a single cocktail precursor based on a liquid-delivery system and their application in transistors and inverters

Performance of Transparent Indium–Gallium–Zinc Oxide Thin Film Transistor Prepared by All Plasma Enhanced Atomic Layer Deposition

Facile Room Temperature Routes to Improve Performance of IGZO Thin-Film Transistors by an Ultrathin Al2O3 Passivation Layer

Amorphous IGZO TFT with High Mobility of ~70 cm2/Vs via Vertical Dimension Control using PEALD.

High mobility of IGO/IGZO double-channel thin-film transistors by atomic layer deposition

High-Performance Thin-Film Transistors with ZnO/Al2O3 Superlattice Channel Fabricated by Atomic Layer Deposition

Indium–gallium–zinc–oxide thin-film transistors: Materials, devices, and applications

Indium–gallium–zinc–oxide Thin-Film Transistors:Materials,devices, and Applications