Abstract:High-resolution active-matrix organic light-emitting diode (AMOLED) thin-film transistor (TFT) backplane with lower power consumption is needed for augmented reality (AR) applications. The near-to-eye format of AR terminals needs facing several technical challenges, such as higher optical efficiency, wider field of view, lighter weight, and smaller size to accelerate widespread applications. For these reasons, downscaling of TFTs with amorphous-indium-gallium-zinc-oxide (a-IGZO) or LTPS is required. The channel length should be less than 1 μm and the flexible substrate is better than glass because of light weight and very thin structure. TFT technologies on polyimide (PI) substrate can support the applications for foldable and rollable displays. For flexible AMOLED, PI layer of 10 to 20 um is widely used for foldable displays. The PI layer is coated by slot coating on the top of a carrier glass with a buffer layer of carbon nanotubes (CNTs) and graphene oxide (GO) mixture coated by spray. This layer can reduce the adhesion force between PI and glass and thus mechanical detachment can be possible. The CNTs are conducting so that it can release the electrostatic discharge (ESD) damage because CNTs/GO layer exists on the bottom side of the PI substrate. The PI substrate is covered by SiO 2 and ZrAlO x layers (five layers in total starting with SiO 2 ) by plasma enhanced chemical vapor deposition and spray pyrolysis, respectively, which acts as a gas barrier. The amorphous ZrAlO x film by spray coating can be used as a high-k gate insulator and also a gas barrier. The threshold voltage of a-IGZO TFTs tends to shift toward negative gate voltage with decreasing the channel length. In this work, a ZrAlO x passivation layer is introduced for the short channel, coplanar a-IGZO TFT. A very thin ZrAlO x layer is deposited by spray pyrolysis on the top of a-IGZO TFT at the substrate temperature of 350 °C before interlayer deposition. The a-IGZO TFT with a very thin ZrAlO x layer exhibits the stable threshold voltage dependence with decreasing the channel length. The 0.8 μm channel length a-IGZO TFT with ZrAlO x layer by spray pyrolysis at the substrate temperature of 350 °C exhibits the field-effect mobility of 7.09 cm 2 V -1 s -1 , the threshold voltage of -0.6 V, and on/off current ratio of 3.3 × 10 7 . The formation of Zr-O bonds on the a-IGZO surface region reduces the carrier concentration in the a-IGZO TFT offset region, between source/drain contact and the channel, and blocks the carrier diffusion into the channel. This is the first reported self-aligned coplanar a-IGZO TFT under 1 μm channel length on a flexible substrate. Figure 1

Amorphous IGZO TFT with High Mobility of ~70 cm2/Vs via Vertical Dimension Control using PEALD.

15.2: Invited Paper: Atomic Layer Deposited Oxide Semiconductor Enabling High Mobility and Low Driving Voltage in TFTs

Mobility and Stability Enhancement of Amorphous In-Ga-Zn-O TFTs with Atomic Layer Deposited Al2O3/SiO2Stacked Insulators

High mobility of IGO/IGZO double-channel thin-film transistors by atomic layer deposition

High-Performance Fully Thermal ALD-Processed IGZO Thin Film Transistors

Comparative Study of Atomic Layer Deposited Indium-Based Oxide Transistors with a Fermi Energy Level-Engineered Heterojunction Structure Channel through a Cation Combinatorial Approach

Charge transport properties of high-mobility indium–gallium–zinc oxide thin-film transistors fabricated through atomic-layer deposition

Oxide TFT with multilayer gate insulator for backplane of AMOLED device

Tri‐Layer Heterostructure Channel of a‐IGZO/a‐ITZO/a‐IGZO Toward Enhancement of Transport and Reliability in Amorphous Oxide Semiconductor Thin Film Transistors

Exploration of Chemical Composition of In–Ga–Zn–O System via PEALD Technique for Optimal Physical and Electrical Properties

(Invited) Short Channel Coplanar Amorphous-Indium-Gallium-Zinc-Oxide Thin-Film Transistors on Polyimide Substrate for High Resolution Displays

Highly robust oxide TFT with bulk accumulation and source/drain/active layer splitting

Improved mobility and bias stability of Hf-doped IGZO/IZO/Hf-doped IGZO thin-film transistor

High-Performance of InGaZnO TFTs With an Ultrathin 5-nm Al₂O₃ Gate Dielectric Enabled by a Novel Atomic Layer Deposition Method

97‐3: Late‐News Paper: Enhanced IGZO TFT Performance with Atomic Layer Deposition Parameter Optimization for Large OLED Displays

Present status of amorphous In–Ga–Zn–O thin-film transistors

High-Performance Amorphous InGaZnO Thin-Film Transistor Gated by HfAlOₓ Dielectric with Ultralow Subthreshold Swing

High-performance IGZO-based TFTs with Stacked Al<sub>2</sub>O<sub>3</sub>/HfO<sub>2</sub> Dielectrics

High mobility achieved in InGaZnO TFT with vacuum-gap as insulating layer

High-Performance of InGaZnO TFTs With an Ultrathin 5-nm Al2O3 Gate Dielectric Enabled by a Novel Atomic Layer Deposition Method

High-Performance of InGaZnO TFTs With an Ultrathin 5-nm Al<sub>2</sub>O<sub>3</sub> Gate Dielectric Enabled by a Novel Atomic Layer Deposition Method