Ultra-thin gate insulator of atomic-layer-deposited AlO x and HfO x for amorphous InGaZnO thin-film transistors
Jiye Li,Yuhang Guan,Jinxiong Li,Yuqing Zhang,Yuhan Zhang,Xinwei Wang,Lei Lu,Shengdong Zhang,Mansun Chan
DOI: https://doi.org/10.1088/1361-6528/acc742
IF: 3.5
2023-03-26
Nanotechnology
Abstract:To strengthen the downscaling potential of top-gate amorphous oxide semiconductor (AOS)
thin-film transistors (TFTs), the ultra-thin gate insulator (GI) was comparatively implemented using the atomic-layer-deposited (ALD) AlO x and HfO x . Both kinds of high-k GIs exhibit good insulating properties even with the physical thickness thinning to 4 nm. Compared to the amorphous indium-gallium-zinc oxide (a-IGZO) TFTs with 4-nm AlO x GI, the 4-nm HfO x enables a larger GI capacitance, while the HfO x -gated TFT suffers the higher gate leakage current and poorer subthreshold slope, respectively originating from the inherently small band offset and the highly defective interface between a-IGZO and HfO x . Such imperfect a-IGZO/HfO x interface further causes the noticeable positive bias stress (PBS) instability. Both ALD AlO x and HfO x were found to react with the underneath a-IGZO channel to generate the interface defects, such as metal interstitials and oxygen vacancies, while the ALD process of HfO x gives rise to a more severe reduction of a-IGZO. Moreover, when such a defective interface is covered by the top gate, it cannot be readily restored using the conventional oxidizing post-treatments and thus desires the reduction-resistant pre-treatments of AOSs.
materials science, multidisciplinary,physics, applied,nanoscience & nanotechnology