Investigation of Thermally Induced Threshold Voltage Shift in Normally-OFF p-GaN Gate HEMTs
Huan Wang,Yan Lin,Junsong Jiang,Dan Dong,Fengwei Ji,Meng Zhang,Ming Jiang,Wei Gan,Hui Li,Maojun Wang,Jin Wei,Baikui Li,Xi Tang,Cungang Hu,Wenping Cao
DOI: https://doi.org/10.1109/ted.2022.3157805
IF: 3.1
2022-05-01
IEEE Transactions on Electron Devices
Abstract:In this article, the thermally induced threshold voltage ( <span class="mjpage"><svg xmlns:xlink="http://www.w3.org/1999/xlink" width="7.097ex" height="2.509ex" style="vertical-align: -0.671ex;" viewBox="0 -791.3 3055.8 1080.4" role="img" focusable="false" xmlns="http://www.w3.org/2000/svg"><g stroke="currentColor" fill="currentColor" stroke-width="0" transform="matrix(1 0 0 -1 0 0)"> <use xlink:href="#MJMATHI-56" x="0" y="0"></use><g transform="translate(583,-150)"> <use transform="scale(0.707)" xlink:href="#MJMATHI-74" x="0" y="0"></use> <use transform="scale(0.707)" xlink:href="#MJMATHI-65" x="361" y="0"></use> <use transform="scale(0.707)" xlink:href="#MJMATHI-78" x="828" y="0"></use> <use transform="scale(0.707)" xlink:href="#MJMATHI-74" x="1400" y="0"></use><g transform="translate(1245,0)"> <use transform="scale(0.707)" xlink:href="#MJMATHI-54" x="0" y="0"></use> <use transform="scale(0.707)" xlink:href="#MJMATHI-48" x="704" y="0"></use></g></g></g></svg></span> ) shift was investigated on two types of normally- OFF p-GaN gate high-electron-mobility transistors (HEMTs), featuring either an Ohmic-type or a Schottky-type gate. A positive <span class="mjpage"><svg xmlns:xlink="http://www.w3.org/1999/xlink" width="7.097ex" height="2.509ex" style="vertical-align: -0.671ex;" viewBox="0 -791.3 3055.8 1080.4" role="img" focusable="false" xmlns="http://www.w3.org/2000/svg"><g stroke="currentColor" fill="currentColor" stroke-width="0" transform="matrix(1 0 0 -1 0 0)"> <use xlink:href="#MJMATHI-56" x="0" y="0"></use><g transform="translate(583,-150)"> <use transform="scale(0.707)" xlink:href="#MJMATHI-74" x="0" y="0"></use> <use transform="scale(0.707)" xlink:href="#MJMATHI-65" x="361" y="0"></use> <use transform="scale(0.707)" xlink:href="#MJMATHI-78" x="828" y="0"></use> <use transform="scale(0.707)" xlink:href="#MJMATHI-74" x="1400" y="0"></use><g transform="translate(1245,0)"> <use transform="scale(0.707)" xlink:href="#MJMATHI-54" x="0" y="0"></use> <use transform="scale(0.707)" xlink:href="#MJMATHI-48" x="704" y="0"></use></g></g></g></svg></span> shift in a Schottky-type device and a negative <span class="mjpage"><svg xmlns:xlink="http://www.w3.org/1999/xlink" width="7.097ex" height="2.509ex" style="vertical-align: -0.671ex;" viewBox="0 -791.3 3055.8 1080.4" role="img" focusable="false" xmlns="http://www.w3.org/2000/svg"><g stroke="currentColor" fill="currentColor" stroke-width="0" transform="matrix(1 0 0 -1 0 0)"> <use xlink:href="#MJMATHI-56" x="0" y="0"></use><g transform="translate(583,-150)"> <use transform="scale(0.707)" xlink:href="#MJMATHI-74" x="0" y="0"></use> <use transform="scale(0.707)" xlink:href="#MJMATHI-65" x="361" y="0"></use> <use transform="scale(0.707)" xlink:href="#MJMATHI-78" x="828" y="0"></use> <use transform="scale(0.707)" xlink:href="#MJMATHI-74" x="1400" y="0"></use><g transform="translate(1245,0)"> <use transform="scale(0.707)" xlink:href="#MJMATHI-54" x="0" y="0"></use> <use transform="scale(0.707)" xlink:href="#MJMATHI-48" x="704" y="0"></use></g></g></g></svg></span> shift in an Ohmic-type device were observed at elevated temperatures. Temperature-dependent gate current–voltage ( <span class="mjpage"><svg xmlns:xlink="http://www.w3.org/1999/xlink" width="5.799ex" height="2.343ex" style="vertical-align: -0.505ex;" viewBox="0 -791.3 2496.9 1008.6" role="img" focusable="false" xmlns="http://www.w3.org/2000/svg"><g stroke="currentColor" fill="currentColor" stroke-width="0" transform="matrix(1 0 0 -1 0 0)"> <use xlink:href="#MJMATHI-49" x="0" y="0"></use> <use xlink:href="#MJMAIN-2212" x="726" y="0"></use> <use xlink:href="#MJMATHI-56" x="1727" y="0"></use></g></svg></span> ) and the transfer-length-method (TLM) analysis revealed that the bias condition across the p-GaN/AlGaN/GaN heterostructures was changed in both Schottky- and Ohmic-type devices as temperature increased. We propose that: 1) temperature-enhanced hole injection through thermionic emission which lowers the knee voltage of the Ohmic-metal/ p-GaN contact in Ohmic-type devices and 2) thermally enhanced gate current which enlarges the bias voltage across the Schottky-metal/p-GaN junction in Schottky-type devices, resulted in the observed <span class="mjpage"><svg xmlns:xlink="http://www.w3.org/1999/xlink" width="7.097ex" height="2.509ex" style="vertical-align: -0.671ex;" viewBox="0 -791.3 3055.8 1080.4" role="img" focusable="false" xmlns="http://www.w3.org/2000/svg"><g stroke="currentColor" fill="currentColor" stroke-width="0" transform="matrix(1 0 0 -1 0 0)"> <use xlink:href="#MJMATHI-56" x="0" y="0"></use><g transform="translate(583,-150)"> <use transform="scale(0.707)" xlink:href="#MJMATHI-74" x="0" y="0"></use> <use transform="scale(0.707)" xlink:href="#MJMATHI-65" x="361" y="0"></use> <use transform="scale(0.707)" xlink:href="#MJMATHI-78" x="828" y="0"></use> <use transform="scale(0.707)" xlink:href="#MJMATHI-74" x="1400" y="0"></use><g transform="translate(1245,0)"> <use transform="scale(0.707)" xlink:href="#MJMATHI-54" x="0" y="0"></use> <use transform="scale(0.707)" xlink:href="#MJMATHI-48" x="704" y="0"></use></g></g></g></svg></span> instability characteristics. The photoluminescence measurements were conducted to verify the thermally-enhanced ionization of magnesium dopants in the p-GaN and the corresponding instability issues.<svg xmlns="http://www.w3.org/2000/svg" style="display: none;"><defs id="MathJax_SVG_glyphs"><path stroke-width="1" id="MJMATHI-56" d="M52 648Q52 670 65 683H76Q118 680 181 680Q299 680 320 683H330Q336 677 336 674T334 656Q329 641 325 637H304Q282 635 274 635Q245 630 242 620Q242 618 271 369T301 118L374 235Q447 352 520 471T595 594Q599 601 599 609Q599 633 555 637Q537 637 537 648Q537 649 539 661Q542 675 545 679T558 683Q560 683 570 683T604 682T668 681Q737 681 755 683H762Q769 676 769 672Q769 655 760 640Q757 637 743 637Q730 636 719 635T698 630T682 623T670 615T660 608T652 599T645 592L452 282Q272 -9 266 -16Q263 -18 259 -21L241 -22H234Q216 -22 216 -15Q213 -9 177 305Q139 623 138 626Q133 637 76 637H59Q52 642 52 648Z"></path><path stroke-width="1" id="MJMATHI-74" d="M26 385Q19 392 19 395Q19 399 22 411T27 425Q29 430 36 430T87 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engineering, electrical & electronic,physics, applied