Simulation Study of Novel Trench Gate U-Shaped Channel SOI Lateral IGBTs With Suppressed Gate Voltage Overshoot and Reduced di/dt

Jie Ma,Long Zhang,Jing Zhu,Wangming Cui,Weifeng Sun,Feiming Huang,Yan Gu,Sen Zhang,Nailong He
DOI: https://doi.org/10.1109/ted.2021.3084578
IF: 3.1
2021-08-01
IEEE Transactions on Electron Devices
Abstract:The gate voltage overshoot during the turn-on transient in the trench gate U-shaped (TGU) channel silicon-on-insulator lateral insulated gate bipolar transistor (SOI-LIGBT) is investigated and novel structures are proposed for the first time with numerical simulation in this article. The TGU SOI-LIGBT features two U-shaped trench gates, G<sub>1</sub> and G<sub>2</sub>, connected together. The U-shaped trench for G<sub>2</sub> serves as a hole barrier trench. A large number of holes accumulate in the U-shaped region during the turn-on transient because of the U-shaped architecture and the hole-blocking effect of G<sub>2</sub>. The displacement current induced by the nonuniform distributed holes overcharges the gate and leads to high di/dt. In this article, the novel structures (Novel-1 and Novel-2) with G<sub>2</sub> partially filled by the polysilicon are proposed for the improvement in gate voltage overshoot while keeping superior turn-on loss ( <span class="mjpage"><svg xmlns:xlink="http://www.w3.org/1999/xlink" width="10.698ex" height="2.509ex" style="vertical-align: -0.671ex;" viewBox="0 -791.3 4606 1080.4" role="img" focusable="false" xmlns="http://www.w3.org/2000/svg"><g stroke="currentColor" fill="currentColor" stroke-width="0" transform="matrix(1 0 0 -1 0 0)"> <use xlink:href="#MJMATHI-45" x="0" y="0"></use><g transform="translate(738,-155)"> <use transform="scale(0.707)" xlink:href="#MJMATHI-6D" x="0" y="0"></use> <use transform="scale(0.707)" xlink:href="#MJMATHI-61" x="878" y="0"></use> <use transform="scale(0.707)" xlink:href="#MJMATHI-74" x="1408" y="0"></use> <use transform="scale(0.707)" xlink:href="#MJMATHI-68" x="1769" y="0"></use> <use transform="scale(0.707)" xlink:href="#MJMATHI-72" x="2346" y="0"></use> <use transform="scale(0.707)" xlink:href="#MJMATHI-6D" x="2797" y="0"></use><g transform="translate(2599,0)"> <use transform="scale(0.707)" xlink:href="#MJMATHI-4F" x="0" y="0"></use> <use transform="scale(0.707)" xlink:href="#MJMATHI-4E" x="763" y="0"></use></g></g></g></svg></span> ). The novel structures (Novel-1 and Novel-2) can suppress the hole accumulation and slow down the rising of the electric potential in the silicon region near the G<sub>2</sub>. The di/dt can be lowered and the displacement current that overcharges G<sub>2</sub> can be effectively shielded. 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engineering, electrical & electronic,physics, applied
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