Abstract:Recently, the high-mobility flexible thin film transistor (TFT) has been reported by using an organic–inorganic heterojunction structure to enhance the flexibility. This study investigates the origin of enhancement in an In–Ga–Zn–O (IGZO)-based TFT, utilizing 6FDA-based polyimide (6FDA-MDA) as the gate insulator (GI) to achieve a high-mobility flexible TFT. 6FDA-MDA has great advantages to apply to a flexible TFT as a gate insulator, such as a low leakage current, high mechanical stability, a room-temperature process, and smooth surface topographies. Through qualitative/quantitative defect analysis of the IGZO/GI interface, we find the origin of enhancement in the IGZO/6FDA-MDA TFT and suggest a facile method by applying an Al2O3 interlayer. By analyzing the physical properties of the IGZO TFT with a 6FDA-MDA GI, we find that diffused fluorine atoms from the 6FDA-MDA in the active area modulate the Fermi level toward the valence band in the interface. To prevent the diffusion of fluorine, we used the Al2O3 layer as a blocking layer, and it is confirmed by quantitative defect analysis that the defect states in the active/GI interface region are reduced by inserting the Al2O3 interlayer. By applying an Al2O3 interlayer between the GI and the active layer, the performance has been improved in terms of mobility, bias stability, and on/off ratio. Precisely, the field-effect mobility increased about 5 times from 0.05 to 14.57 cm2/(V s), the positive biased threshold voltage decreased to 8.0 from 14.42 V, and the on/off ratio increased to 2.62 × 108 from 3.77 × 106. Moreover, the TFT device with Al2O3 blocking can operate over 2000 times. Due to sputtering damage, fluorine could be diffused from 6FDA-MDA to the IGZO active area and generate defects in a channel. The formation energy and energy level in the band gap of the IGZO film with fluorine are obtained by density functional theory calculations. Fluorine causes the defect states in the IGZO/6FDA-MDA interface, and the energy level of each defect state is lowered to the conduction band by fluorine diffusion.

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Ultra-thin gate insulator of atomic-layer-deposited AlO x and HfO x for amorphous InGaZnO thin-film transistors

High-Performance Self-Aligned Top-Gate Amorphous InGaZnO TFTs with 4 Nm-Thick Atomic-Layer-Deposited AlOx Insulator

Ultra-thin top-gate insulator of atomic-layer-deposited HfO x for amorphous InGaZnO thin-film transistors

Sub-100 Nm Self-Aligned Top-Gate Amorphous InGaZnO Thin-Film Transistors with Gate Insulator of 4 Nm Atomic-Layer-Deposited AlOx

Ultra-thin Top-Gate Insulator of Atomic-Layer-deposited HfOx for Amorphous InGaZnO Thin-Film Transistors

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High-Performance of InGaZnO TFTs With an Ultrathin 5-nm Al2O3 Gate Dielectric Enabled by a Novel Atomic Layer Deposition Method

Effect of Gate Insulator Thickness on Device Performance of Ingazno Thin-Film Transistors

Self-aligned Top-Gate InGaZnO Thin Film Transistors Using SiO2/Al2O3 Stack Gate Dielectric

Control of Interfacial Defect States in the Flexible InGaZnO Thin Film Transistor with a 6FDA-MDA Gate Insulator by Using an Al 2 O 3 Interlayer

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Improvement of Amorphous InGaZnO Thin-Film Transistor Reliability and Electrical Performance Using ALD SiO2 Interfacial Layer on PECVD SiO2 Gate Insulator

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Enhanced Bias Stress Stability of A-Ingazno Thin Film Transistors by Inserting an Ultra-Thin Interfacial InGaZnO:N Layer

Self-Aligned Top-Gate Amorphous InGaZnO TFTs with Plasma Enhanced Chemical Vapor Deposited Sub-10 Nm SiO2 Gate Dielectric for Low-Voltage Applications

The influence of SiO2 and Al2O3 gate insulator to the performance of In-Ga-Zn-O thin film transistors

High-Performance Amorphous InGaZnO Thin-Film Transistor Gated by HfAlOₓ Dielectric with Ultralow Subthreshold Swing

Reliability Engineering of High‐Mobility IGZO Transistors via Gate Insulator Heterostructures Grown by Atomic Layer Deposition