Abstract:Indium–gallium–zinc oxide (IGZO) as a star material has been broadly applied in multiple functional devices, including planar displays, flexible electronic devices, and photoelectronics. In recent years, the development of artificial intelligence and great data also extends the application of IGZO-based thin film transistors (TFTs) to memory, memristors, and neuromorphic computing. Thus, the research of high performance and reliable IGZO TFTs attracts tremendous attention worldwide. Herein, a high-quality IGZO thin film was deposited via atomic layer deposition, and a dual-gate (DG) IGZO TFT was fabricated. Comprehensive electrical characterization was conducted on the fabricated DG IGZO TFTs, revealing that DG IGZO TFTs exhibited good performance for reliability analysis. The reliability and degradation mechanism of the DG IGZO TFT was systematically investigated under bias stress at room temperature and elevated temperatures of 350, 400, and 450 K by the comprehensive electrical characterization. Results indicate that the defects of the dual gate insulators and the interfaces majorly influence the degradation under bias stresses, while the carrier scattering of the IGZO channel is the major degradation mechanism under elevated temperatures. These findings highlight the degradation mechanism of the DG IGZO TFT under bias stress and elevated temperatures from a novel viewpoint, which provides a utilizable reference to its application in circuits.

30.3: Impact of Top Gate Insulator Deposition Temperature on Electrical Performance of Dual‐Gate a‐InZnO TFTs

P‐2: Investigation of high mobility crystalline IGO TFT with top‐gate structure for LCD display application

Reliability Analysis under Bias Stress and Elevated Temperature of Dual-Gate IGZO TFT

P‐13: Electrical Characteristics and Stability of Double‐Gate A‐igzo Thin Film Transistors with Self‐Aligned Top‐Gate

High-Performance Unannealed A-Ingazno Tft with an Atomic-Layer-Deposited Sio2 Insulator

Gate Insulator Influences on the Electrical Performance of Back-Channel-Etch Amorphous Zinc Tin Oxide (A-Zto) Thin Film Transistors

Temperature Dependent Anomalous Threshold Voltage Modulation of a-IGZO TFT by Incorporating Variant Gate Stresses

A Simple Doping Process Achieved by Modifying the Passivation Layer for Self-Aligned Top-Gate In-Ga-Zn-O Thin-Film Transistors at 200 degrees C

A Simple Doping Process Achieved by Modifying the Passivation Layer for Self-Aligned Top-Gate In-Ga-Zn-O Thin-Film Transistors at 200 °C

Abnormal Bias Instabilities Induced by Lateral H2O Diffusion into Top-Gate Insulator of A-Ingazno Thin-Film Transistors

Temperature-Dependent Instability of Bias Stress in InGaZnO Thin-Film Transistors

High-Performance Self-Aligned Top-Gate Amorphous InGaZnO TFTs with 4 Nm-Thick Atomic-Layer-Deposited AlOx Insulator

Positive gate bias instability alleviated by self-passivation effect in amorphous InGaZnO thin-film transistors

Thermal Annealing Improved Stability of Amorphous InGaZnO Thin-Film Transistors Under AC Bias Stresses

P‐6.1: Asymmetric Effects of Gate‐Bias Stress Voltage on the Stability under Positive and Negative Gate‐Bias Stress of A‐igzo TFTs

Atmosphere Effect in Post-Annealing Treatments for Amorphous InGaZnO Thin-Film Transistors with SiOx Passivation Layers

Near-Ideal Top-Gate Controllability of InGaZnO Thin-Film Transistors by Suppressing Interface Defects with an Ultrathin Atomic Layer Deposited Gate Insulator

Solution-processed Coplanar Top-Gate ZnInSnO Thin Film Transistors and Bias Stability

P-1.14: The Influence of Dual-channel on the Performance of Self-Align Top-Gate IGZO Thin Film Transistors

P‐9: Improved Electrical Stability of Double‐Gate A‐igzo TFTs

Stability enhancement of top-gate self-aligned tin-doped indium gallium oxide thin film transistor by low temperature annealing