Abstract:An excess oxygen‐peroxide‐based model that can simultaneously analyze the positive‐bias‐stress (PBS) and negative‐bias‐illumination‐stress (NBIS) instabilities in commercial self‐aligned top‐gate (SA‐TG) coplanar indium–gallium–zinc oxide (IGZO) thin‐film transistors (TFTs) is proposed herein. Existing studies have reported that the transition of oxygen vacancy (VO) charge states from VO0 to VO2+ is the dominant physical mechanism responsible for the negative shift of threshold voltage (VTH) under NBIS. However, in this study, it is observed that both the PBS and the NBIS stabilities of IGZO TFTs deteriorate at a faster rate as the amount of oxygen increases within the channel layer, implying that the conventional VO‐related defect model is inappropriate in elucidating the PBS and NBIS instabilities of commercial SA‐TG coplanar IGZO TFTs, where the channel layers are formed under high oxygen flow rates (OFRs) to make VTH positive. On the basis of the full‐energy range subgap density of states extracted before and after each stress from IGZO TFTs with different OFRs, it is determined that the generation and annihilation of the subgap states in the excess oxygen peroxide configuration are the dominant physical mechanisms for PBS and NBIS instabilities in commercial SA‐TG coplanar IGZO TFTs, respectively. An excess‐oxygen‐peroxide‐based model that can simultaneously analyze the positive‐bias‐stress and negative‐bias‐illumination stress instabilities in commercial self‐aligned top‐gate (SA‐TG) coplanar indium–gallium–zinc oxide (IGZO) thin‐film transistors (TFTs) is proposed herein. The results of this study are expected to contribute to the modeling, design, and fabrication of highly reliable and stable SA‐TG coplanar IGZO TFTs.

Reliability Analysis under Bias Stress and Elevated Temperature of Dual-Gate IGZO TFT

Temperature Dependent Anomalous Threshold Voltage Modulation of a-IGZO TFT by Incorporating Variant Gate Stresses

Origin of degradation phenomenon under drain bias stress for oxide thin film transistors using IGZO and IGO channel layers

30.3: Impact of Top Gate Insulator Deposition Temperature on Electrical Performance of Dual‐Gate a‐InZnO TFTs

Characteristics Analysis of IGZO TFT and Logic Unit in the Temperature Range of 8–475 K

Temperature-Dependent Instability of Bias Stress in InGaZnO Thin-Film Transistors

Improvement in Reliability of Amorphous Indium–gallium–zinc Oxide Thin-Film Transistors with Teflon/SiO2 Bilayer Passivation under Gate Bias Stress

Negative-U Defect Passivation in Oxide-Semiconductor by Channel Defect Self-Compensation Effect to Achieve Low Bias Stress VTH Instability of Low-Thermal Budget IGZO TFT and FeFETs

18‐4: Mechanical Stress‐Induced Recoverable and Unrecoverable Deteriorations of Flexible A‐ingazno Thin‐Film Transistor

Stablity research and application of amorphous indium gallium zinc oxide tfts for active matrix organic light-emitting diode display

16‐3: Investigation of Mechanical Stress and Gate Bias Stress on Flexible Dual‐gate a‐IGZO Thin Film Transistors

Current Temperature Stress Induced Threshold Degradation on Corbino A-Ingazno Transistors

Enhanced Bias Stress Stability of A-Ingazno Thin Film Transistors by Inserting an Ultra-Thin Interfacial InGaZnO:N Layer

P‐2: Investigation of high mobility crystalline IGO TFT with top‐gate structure for LCD display application

High-density carrier-accumulated and electrically stable oxide thin-film transistors from ion-gel gate dielectric

Degradation Mechanism and Stability of Flexible Self-Aligned Top-Gate InGaZnO TFT

Gate Bias Stress-Induced Threshold Voltage Shift Effect of a-IGZO TFTs with Cu Gate

Excessive Oxygen Peroxide Model‐Based Analysis of Positive‐Bias‐Stress and Negative‐Bias‐Illumination‐Stress Instabilities in Self‐Aligned Top‐Gate Coplanar In–Ga–Zn–O Thin‐Film Transistors

Analysis of Threshold Voltage Shift for Full VGS/VDS/Oxygen-Content Span under Positive Bias Stress in Bottom-Gate Amorphous InGaZnO Thin-Film Transistors

Competition Between Heating and Cooling During Dynamic Self-Heating Degradation of Amorphous InGaZnO Thin-Film Transistors

The stability analysis of In–Ga–ZnO thin film transistors with polyimide substrates based on Maxwell–Wagner effect