Abstract:InGaZnO (IGZO) is currently the most prominent oxide semiconductor complement to low-temperature polysilicon for thin-film transistor (TFT) applications in flat panel displays. However, the compromised transport performance and bias stress instability are critical issues inhibiting its application in ultrahigh-resolution optoelectronic displays. Here, we report the fabrication of graded channel junctionless IGZO:O|N TFTs with both high transporting properties and good bias stress stability by systematic manipulation of oxygen vacancy (VO) defects through sequential O antidoping and O/N codoping of the continuous IGZO framework. The transporting properties and bias stress stability of the graded channel IGZO:O|N TFTs, which exhibited high field-effect mobilities close to 100 cm2 V–1 s–1, negligible performance degradations, and trivial threshold voltage shifts against gate bias stress and photobias stress, are simultaneously improved compared to those of the controlled single-channel uniformly doped IGZO:O TFTs, IGZO:N TFTs, and double-channel barrier-confined IGZO:O/IGZO:N TFTs. The synergistic improvements are attributed to the sequential mobility and stability enhancement effects of O antidoping and O/N codoping where triple saturation currents are induced by O antidoping of the front-channel regime while the trapped electrons and photoexcited holes in the back-channel bulk and surface regions are suppressed by O/N codoping. More importantly, fast accumulation and barrier-free full depletion are rationally realized by eliminating the junction interface within the graded channel layer. Our observation identifies that graded channel doping could be a powerful way to synergistically boost up the transport performance and bias stress stability of oxide TFTs for new-generation ultrahigh-definition display applications.The Supporting Information is available free of charge at <a class="ext-link" href="/doi/10.1021/acsami.0c13873?goto=supporting-info">https://pubs.acs.org/doi/10.1021/acsami.0c13873</a>.Cross-sectional SEM images of the bottom-gate top-contact IGZO TFTs, dielectric performance of the AHA gate insulator, wide XPS spectra of the IGZO films deposited with different fN2 values, channel length-dependent resistance measured by the transmission line method, PBS and NBIS stabilities of the IGZO:N TFTs fabricated with fN2 = 0.8 sccm, variation of fO2 and fN2 during sequential growth of the graded channel junctionless IGZO:O|N layer and the corresponding spatial distributions of VO and Ne, statistical studies on electrical properties for IGZO TFTs, schematic illustration of the device structure of bilayer-channel IGZO:O/IGZO:N TFTs, optical transmittance and band gap of the separate IGZO:O and IGZO:N channel layers grown on quartz substrates, and UPS valence band spectra of the IGZO:O (1.5 nm)/IGZO:N (8.0 nm) bilayer junction and IGZO:N (8.0 nm)/IGZO:O (1.5 nm) bilayer junction (<a class="ext-link" href="/doi/suppl/10.1021/acsami.0c13873/suppl_file/am0c13873_si_001.pdf">PDF</a>)This article has not yet been cited by other publications.

35‐4: High‐Mobility and High‐Negative Bias Illumination Stress Stability Based on ITZO/IGZO Bilayer Thin Film Transistors

Addressing the Conflict between Mobility and Stability in Oxide Thin‐film Transistors

Tri‐Layer Heterostructure Channel of a‐IGZO/a‐ITZO/a‐IGZO Toward Enhancement of Transport and Reliability in Amorphous Oxide Semiconductor Thin Film Transistors

Mobility and Stability Enhancement of Amorphous In-Ga-Zn-O TFTs with Atomic Layer Deposited Al2O3/SiO2Stacked Insulators

Stablity research and application of amorphous indium gallium zinc oxide tfts for active matrix organic light-emitting diode display

High mobility of IGO/IGZO double-channel thin-film transistors by atomic layer deposition

P‐19: High Mobility and Reliability Oxide Stacked TFT for Application to Next Generation Display

High-performance a-ITZO TFTs with high bias stability enabled by self-aligned passivation using a-GaOx

Graded Channel Junctionless InGaZnO Thin-Film Transistors with Both High Transporting Properties and Good Bias Stress Stability

Remarkable Stability Improvement with a High‐Performance PEALD‐IZO/IGZO Top‐Gate Thin‐Film Transistor via Modulating Dual‐Channel Effects

Improvement of Mobility and Stability in Oxide Thin-Film Transistors Using Triple-Stacked Structure

Enhancing the Carrier Mobility and Bias Stability in Metal–Oxide Thin Film Transistors with Bilayer InSnO/a-InGaZnO Heterojunction Structure

Improved mobility and bias stability of Hf-doped IGZO/IZO/Hf-doped IGZO thin-film transistor

Comparative Study of Atomic Layer Deposited Indium-Based Oxide Transistors with a Fermi Energy Level-Engineered Heterojunction Structure Channel through a Cation Combinatorial Approach

Improved Performance and Bias Stability of Al2O3/IZO Thin-Film Transistors with Vertical Diffusion

Enhanced Stability under Positive Bias Temperature Stress of Ln-Doped Inzno Thin Film Transistors Fabricated with a Back-Channel-Etch Structure

Reliability Engineering of High‐Mobility IGZO Transistors via Gate Insulator Heterostructures Grown by Atomic Layer Deposition

Mobility Enhancement of BCE-Type Amorphous InGaZnO TFTs Using Triple-Layer Channels

Negative-U Defect Passivation in Oxide-Semiconductor by Channel Defect Self-Compensation Effect to Achieve Low Bias Stress VTH Instability of Low-Thermal Budget IGZO TFT and FeFETs

Enhancement of Positive Bias Stress Stability for IGZO TFTs by A CAAC Gd-AZO Bulk Layer

Highly robust oxide TFT with bulk accumulation and source/drain/active layer splitting