Abstract:Indium–gallium–zinc oxide (IGZO) as a star material has been broadly applied in multiple functional devices, including planar displays, flexible electronic devices, and photoelectronics. In recent years, the development of artificial intelligence and great data also extends the application of IGZO-based thin film transistors (TFTs) to memory, memristors, and neuromorphic computing. Thus, the research of high performance and reliable IGZO TFTs attracts tremendous attention worldwide. Herein, a high-quality IGZO thin film was deposited via atomic layer deposition, and a dual-gate (DG) IGZO TFT was fabricated. Comprehensive electrical characterization was conducted on the fabricated DG IGZO TFTs, revealing that DG IGZO TFTs exhibited good performance for reliability analysis. The reliability and degradation mechanism of the DG IGZO TFT was systematically investigated under bias stress at room temperature and elevated temperatures of 350, 400, and 450 K by the comprehensive electrical characterization. Results indicate that the defects of the dual gate insulators and the interfaces majorly influence the degradation under bias stresses, while the carrier scattering of the IGZO channel is the major degradation mechanism under elevated temperatures. These findings highlight the degradation mechanism of the DG IGZO TFT under bias stress and elevated temperatures from a novel viewpoint, which provides a utilizable reference to its application in circuits.

Degradation Mechanism and Stability of Flexible Self-Aligned Top-Gate InGaZnO TFT

High-Performance Self-Aligned Top-Gate Amorphous InGaZnO TFTs with 4 Nm-Thick Atomic-Layer-Deposited AlOx Insulator

Flexible Self-Aligned Double-Gate IGZO TFT

18‐4: Mechanical Stress‐Induced Recoverable and Unrecoverable Deteriorations of Flexible A‐ingazno Thin‐Film Transistor

Abnormal Bias Instabilities Induced by Lateral H2O Diffusion into Top-Gate Insulator of A-Ingazno Thin-Film Transistors

Reliability Analysis under Bias Stress and Elevated Temperature of Dual-Gate IGZO TFT

Origin of degradation phenomenon under drain bias stress for oxide thin film transistors using IGZO and IGO channel layers

Positive gate bias instability alleviated by self-passivation effect in amorphous InGaZnO thin-film transistors

Self-Aligned Top-Gate Amorphous InGaZnO TFTs with Plasma Enhanced Chemical Vapor Deposited Sub-10 Nm SiO2 Gate Dielectric for Low-Voltage Applications

P‐13: Electrical Characteristics and Stability of Double‐Gate A‐igzo Thin Film Transistors with Self‐Aligned Top‐Gate

Scalability and Stability Enhancement in Self-Aligned Top-Gate Indium- Zinc-Oxide TFTs with Al Reacted Source/Drain

Effect of mechanical stress on the stability of flexible InGaZnO thin-film transistors

30.3: Impact of Top Gate Insulator Deposition Temperature on Electrical Performance of Dual‐Gate a‐InZnO TFTs

Significant Degradation Reduction in Metal Oxide Thin-Film Transistors via the Interaction of Ionized Oxygen Vacancy Redistribution, Self-Heating Effect, and Hot Carrier Effect

High-performance a-ITZO TFTs with high bias stability enabled by self-aligned passivation using a-GaOx

Sub-100 Nm Self-Aligned Top-Gate Amorphous InGaZnO Thin-Film Transistors with Gate Insulator of 4 Nm Atomic-Layer-Deposited AlOx

A Simple Doping Process Achieved by Modifying the Passivation Layer for Self-Aligned Top-Gate In-Ga-Zn-O Thin-Film Transistors at 200 degrees C

Gate bias stress stability under light irradiation for indium zinc oxide thin-film transistors based on anodic aluminium oxide gate dielectrics

Abnormal Hump and Two-Step Degradation of Top Gate a-InGaZnO TFTs Under Positive Bias Stress

A Simple Doping Process Achieved by Modifying the Passivation Layer for Self-Aligned Top-Gate In-Ga-Zn-O Thin-Film Transistors at 200 °C

9.2: Mechanism of H<sub>2</sub>O‐induced Instability of Self‐Aligned Top‐Gate Amorphous InGaZnO TFTs