Abstract:In this study, the oxygen flow rate (OFR) dependence of negative bias illumination stress (NBIS) and positive bias stress (PBS) in amorphous indium-gallium-zinc-oxide (a-IGZO) thin-film transistor (TFT) devices was investigated. Unlike in previous studies, our study simultaneously considered and analyzed the bias stress-induced degradation mechanisms by charge trapping and defect creation. NBIS and PBS instability were measured according to the OFR splits of bottom-gate (BG) IGZO TFTs and the behavior of full subgap range density of states (DOS) was experimentally tracked with especial emphasis on deep-level oxygen vacancy (${V}_{\text {O}}$ ) peak. It was found that the observed DOS variation was consistent with the ${V}_{\text {O}}$ ionization model during NBIS. In addition, the threshold voltage shift by charge trapping (${\Delta } {V}_{\text {T,CT}}$ ) and the threshold voltage shift by defect creation, i.e., change of DOS, (${\Delta } {V}_{\text {T,DOS}}$ ) were separated and extracted through the subthreshold slope decomposition method. After NBIS, the threshold voltage shift (${\Delta } {V}_{\text {T}}$ ) was composed of a component by charge trapping and a component with the ionization of ${V}_{\text {O}}$ . After PBS, ${\Delta } {V}_{\text {T}}$ was dominated by a component arising due to charge trapping. Fitting through the stretched exponential function (SEF) was performed for each separately extracted ${\Delta } {V}_{\text {T}}$ , and the activation energy for each ${\Delta } {V}_{\text {T}}$ was extracted using the inverse Laplace transform method through the extracted ${\Delta } {V}_{\text {T0}}$ , $\tau $ , and $\beta $ . Activation energy by charge trapping and DOS was extracted from NBIS and PBS, respectively. As a result of simultaneously considering the two degradation mechanisms, the extracted activation energy was located between the previous values. Experimentally extracted sets of DOS-specific parameters before and after bias stress were applied to technology computer-aided design (TCAD) simulations. Accurate reproduction of TFT current–voltage (${I}$ –${V}$ ) curves before and after bias stress and recovery suggests that the methodology and parameter set used in this study are reasonable and potentially useful for a more robust and systematic analysis of the bias stress-induced instability in a-IGZO BG TFTs.

Effect of mechanical stress on the stability of flexible InGaZnO thin-film transistors

Effect of Simultaneous Mechanical and Electrical Stress on the Electrical Performance of Flexible In-Ga-Zn-O Thin-Film Transistors

Effects of Mechanical Stress on Flexible Dual‐Gate A‐ingazno Thin‐Film Transistors

Impact of Repeated Uniaxial Mechanical Strain on Flexible A-Igzo Thin Film Transistors with Symmetric and Asymmetric Structures

Reduction of internal stress in InGaZnO (IGZO) thin film transistors by ultra-thin metal oxide layer

Bi-directional threshold voltage shift of amorphous InGaZnO thin film transistors under alternating bias stress

16‐3: Investigation of Mechanical Stress and Gate Bias Stress on Flexible Dual‐gate a‐IGZO Thin Film Transistors

Degradation Mechanism and Stability of Flexible Self-Aligned Top-Gate InGaZnO TFT

18‐4: Mechanical Stress‐Induced Recoverable and Unrecoverable Deteriorations of Flexible A‐ingazno Thin‐Film Transistor

Drain Current Stress-Induced Instability in Amorphous InGaZnO Thin-Film Transistors with Different Active Layer Thicknesses

Effect of Biaxial Bending Strains on the Electrical Characteristics of Flexible Low-Temperature Polysilicon Thin-Film Transistors

Analysis of a-InGaZnO TFT Threshold Voltage Instability and Mobility Boosting by Current Stress at a Cryogenic Temperature

Thermal Annealing Improved Stability of Amorphous InGaZnO Thin-Film Transistors Under AC Bias Stresses

On the Reliability of an InGaZnO Thin-Film Transistor under Negative Bias Illumination Stress

Analysis of Threshold Voltage Shift for Full VGS/VDS/Oxygen-Content Span under Positive Bias Stress in Bottom-Gate Amorphous InGaZnO Thin-Film Transistors

Total Subgap Range Density of States-Based Analysis of the Effect of Oxygen Flow Rate on the Bias Stress Instabilities in a-IGZO TFTs

Temperature Dependent Anomalous Threshold Voltage Modulation of a-IGZO TFT by Incorporating Variant Gate Stresses

Hydrogen Behavior and Microstructural Evolution in Flexible IGZO Thin Films under Stress

Origin of degradation phenomenon under drain bias stress for oxide thin film transistors using IGZO and IGO channel layers

Temperature-Dependent Instability of Bias Stress in InGaZnO Thin-Film Transistors

Temperature-dependent bias-stress-induced electrical instability of amorphous indium-gallium-zinc-oxide thin-film transistors