Abstract:The preparation of thin-film transistors (TFTs) with InGaZnO (IGZO) channels using sol–gel technology has the advantages of simplicity in terms of process and weak substrate selectivity. We prepared a series of TFT devices with a top contact and bottom gate structure, in which the top contact was divided into rectangular and circular structures of drain/source electrodes. The field-effect performance of TFT devices with circular pattern drain/source electrodes was better than that with a traditional rectangular structure on both substrates. The uniform distribution of the potential in the circular electrode structure was more conducive to the regulation of carriers under the same channel length at different applied voltages. In addition, with the development of transparent substrate devices, we also constructed a hafnium oxide (HfO2) insulation layer and an IGZO active layer on an indium tin oxide conductive substrate, and explored the effect of circular drain/source electrodes on field-effect properties of the semitransparent TFT device. The IGZO deposited on the HfO2 dielectric layer by spin-coating can effectively reduce the surface roughness of the HfO2 layer and optimize the scattering of carriers at the interface in TFT devices.

Reduction of internal stress in InGaZnO (IGZO) thin film transistors by ultra-thin metal oxide layer

Ultrasonic Treatment-Induced Enhancement of Mechanical and Electrical Properties in InGaZnO Thin-Film Transistors

Enhanced Bias Stress Stability of A-Ingazno Thin Film Transistors by Inserting an Ultra-Thin Interfacial InGaZnO:N Layer

Effects of Mechanical Stress on Flexible Dual‐Gate A‐ingazno Thin‐Film Transistors

Thermal Annealing Improved Stability of Amorphous InGaZnO Thin-Film Transistors Under AC Bias Stresses

Significant Degradation Reduction in Metal Oxide Thin-Film Transistors via the Interaction of Ionized Oxygen Vacancy Redistribution, Self-Heating Effect, and Hot Carrier Effect

Effect of mechanical stress on the stability of flexible InGaZnO thin-film transistors

Subgap State Engineering Using Nitrogen Incorporation to Improve Reliability of Amorphous InGaZnO Thin-Film Transistors in Various Stressing Conditions

Improved Field-Effect Mobility of In–Ga–Zn–O TFTs by Oxidized Metal Layer

Enhancement of Positive Bias Stress Stability for IGZO TFTs by A CAAC Gd-AZO Bulk Layer

A Room Temperature Strategy Towards Enhanced Performance And Bias Stability Of Oxide Thin Film Transistor With A Sandwich Structure Channel Layer

Improving Reliability of a-InGaZnO TFTs With Optimal Location of Al2O3 Passivation in Moist Environment

Improvements in passivation effect of amorphous InGaZnO thin film transistors

Solution-processed Coplanar Top-Gate ZnInSnO Thin Film Transistors and Bias Stability

Decreasing the V th shift of InGaZnO thin-film transistors under positive and negative bias stress using SU-8 as etch-stop and passivation layer

18‐4: Mechanical Stress‐Induced Recoverable and Unrecoverable Deteriorations of Flexible A‐ingazno Thin‐Film Transistor

Room-Temperature-Processed Flexible Amorphous InGaZnO Thin Film Transistor.

Comparative study of amorphous indium gallium zinc oxide thin film transistors passivated by sputtered non-stoichiometric aluminum and titanium oxide layers

Fabrication and Properties of InGaZnO Thin-Film Transistors Based on a Sol–Gel Method with Different Electrode Patterns

Origin of degradation phenomenon under drain bias stress for oxide thin film transistors using IGZO and IGO channel layers

Influence Of Passivation Layers On Positive Gate Bias-Stress Stability Of Amorphous Ingazno Thin-Film Transistors