Abstract:We examined the effects of aluminum (Al) capping layer thickness on the electrical performance and stability of high-mobility indium–gallium–tin oxide (IGTO) thin-film transistors (TFTs). The Al capping layers with thicknesses (tAls) of 3, 5, and 8 nm were deposited, respectively, on top of the IGTO thin film by electron beam evaporation, and the IGTO TFTs without and with Al capping layers were subjected to thermal annealing at 200 °C for 1 h in ambient air. Among the IGTO TFTs without and with Al capping layers, the TFT with a 3 nm thick Al capping layer exhibited excellent electrical performance (field-effect mobility: 26.4 cm2/V s, subthreshold swing: 0.20 V/dec, and threshold voltage: −1.7 V) and higher electrical stability under positive and negative bias illumination stresses than other TFTs. To elucidate the physical mechanism responsible for the observed phenomenon, we compared the O1s spectra of the IGTO thin films without and with Al capping layers using X-ray photoelectron spectroscopy analyses. From the characterization results, it was observed that the weakly bonded oxygen-related components decreased from 25.0 to 10.0%, whereas the oxygen-deficient portion was maintained at 24.4% after the formation of the 3 nm thick Al capping layer. In contrast, a significant increase in the oxygen-deficient portion was observed after the formation of the Al capping layers having tAl values greater than 3 nm. These results imply that the thicker Al capping layer has a stronger gathering power for the oxygen species, and that 3 nm is the optimum thickness of the Al capping layer, which can selectively remove the weakly bonded oxygen species acting as subgap tail states within the IGTO. The results of this study thus demonstrate that the formation of an Al capping layer with the optimal thickness is a practical and useful method to enhance the electrical performance and stability of high-mobility IGTO TFTs.

Improved Field-Effect Mobility of In–Ga–Zn–O TFTs by Oxidized Metal Layer

Mobility and Current Boosting of In-Ga-Zn-O thin-film transistors with Metal Capping Layer Oxidation

Mobility and Stability Enhancement of Amorphous In-Ga-Zn-O TFTs with Atomic Layer Deposited Al2O3/SiO2Stacked Insulators

Improved mobility and bias stability of Hf-doped IGZO/IZO/Hf-doped IGZO thin-film transistor

Electrical Performance and Stability Improvements of High-Mobility Indium–Gallium–Tin Oxide Thin-Film Transistors Using an Oxidized Aluminum Capping Layer of Optimal Thickness

Enhanced Electrical Properties and Stability in IGZO TFTs via Low-Temperature Activation with MgOx Layer

High-Performance of InGaZnO TFTs With an Ultrathin 5-nm Al₂O₃ Gate Dielectric Enabled by a Novel Atomic Layer Deposition Method

High-Performance of InGaZnO TFTs With an Ultrathin 5-nm Al2O3 Gate Dielectric Enabled by a Novel Atomic Layer Deposition Method

Improved Performance and Bias Stability of Al2O3/IZO Thin-Film Transistors with Vertical Diffusion

High-Performance of InGaZnO TFTs With an Ultrathin 5-nm Al<sub>2</sub>O<sub>3</sub> Gate Dielectric Enabled by a Novel Atomic Layer Deposition Method

A dual function metal oxide interlayer as an oxygen-defect inhibitor and a gate-leakage suppressor for a hysteresis-free, solution-processed top-gated IGZO TFT

Huge mobility enhancement of InSnZnO thin-film transistors via Al-induced microstructure regularization

Improvement of Amorphous InGaZnO Thin-Film Transistor Reliability and Electrical Performance Using ALD SiO2 Interfacial Layer on PECVD SiO2 Gate Insulator

Enhancing the Stability and Mobility of TFTs via Indium-Tungsten Oxide and Zinc Oxide Engineered Heterojunction Channels Annealed in Oxygen Ambient

High mobility of IGO/IGZO double-channel thin-film transistors by atomic layer deposition

Improvement of Mobility and Stability in Oxide Thin-Film Transistors Using Triple-Stacked Structure

Amorphous IGZO TFT with High Mobility of ~70 cm2/Vs via Vertical Dimension Control using PEALD.

Charge transport properties of high-mobility indium–gallium–zinc oxide thin-film transistors fabricated through atomic-layer deposition

Tri‐Layer Heterostructure Channel of a‐IGZO/a‐ITZO/a‐IGZO Toward Enhancement of Transport and Reliability in Amorphous Oxide Semiconductor Thin Film Transistors

Enhanced Stability Performance of Transparent Ozone ALD ZnO Thin-Film Transistors with SiAlO X Dielectric

15.2: Invited Paper: Atomic Layer Deposited Oxide Semiconductor Enabling High Mobility and Low Driving Voltage in TFTs