Abstract:We examined the effects of aluminum (Al) capping layer thickness on the electrical performance and stability of high-mobility indium–gallium–tin oxide (IGTO) thin-film transistors (TFTs). The Al capping layers with thicknesses (tAls) of 3, 5, and 8 nm were deposited, respectively, on top of the IGTO thin film by electron beam evaporation, and the IGTO TFTs without and with Al capping layers were subjected to thermal annealing at 200 °C for 1 h in ambient air. Among the IGTO TFTs without and with Al capping layers, the TFT with a 3 nm thick Al capping layer exhibited excellent electrical performance (field-effect mobility: 26.4 cm2/V s, subthreshold swing: 0.20 V/dec, and threshold voltage: −1.7 V) and higher electrical stability under positive and negative bias illumination stresses than other TFTs. To elucidate the physical mechanism responsible for the observed phenomenon, we compared the O1s spectra of the IGTO thin films without and with Al capping layers using X-ray photoelectron spectroscopy analyses. From the characterization results, it was observed that the weakly bonded oxygen-related components decreased from 25.0 to 10.0%, whereas the oxygen-deficient portion was maintained at 24.4% after the formation of the 3 nm thick Al capping layer. In contrast, a significant increase in the oxygen-deficient portion was observed after the formation of the Al capping layers having tAl values greater than 3 nm. These results imply that the thicker Al capping layer has a stronger gathering power for the oxygen species, and that 3 nm is the optimum thickness of the Al capping layer, which can selectively remove the weakly bonded oxygen species acting as subgap tail states within the IGTO. The results of this study thus demonstrate that the formation of an Al capping layer with the optimal thickness is a practical and useful method to enhance the electrical performance and stability of high-mobility IGTO TFTs.

Electrical Performance and Stability Improvements of High-Mobility Indium–Gallium–Tin Oxide Thin-Film Transistors Using an Oxidized Aluminum Capping Layer of Optimal Thickness

Improved Field-Effect Mobility of In–Ga–Zn–O TFTs by Oxidized Metal Layer

High-Performance Indium Gallium Tin Oxide Transistors with an Al2O3 Gate Insulator Deposited by Atomic Layer Deposition at a Low Temperature of 150 °C: Roles of Hydrogen and Excess Oxygen in the Al2O3 Dielectric Film

Capping of Indium-Gallium-Zinc Oxide Thin-film Transistors Using ALD Materials

Enhancement Mechanism of Al<sub>2</sub>O<sub>3</sub> Passivation Layer on Electrical Properties of a-IGZO Thin Film Transistors

High-Performance of InGaZnO TFTs With an Ultrathin 5-nm Al₂O₃ Gate Dielectric Enabled by a Novel Atomic Layer Deposition Method

Comparative study of amorphous indium gallium zinc oxide thin film transistors passivated by sputtered non-stoichiometric aluminum and titanium oxide layers

High-Performance of InGaZnO TFTs With an Ultrathin 5-nm Al2O3 Gate Dielectric Enabled by a Novel Atomic Layer Deposition Method

High-Performance of InGaZnO TFTs With an Ultrathin 5-nm Al<sub>2</sub>O<sub>3</sub> Gate Dielectric Enabled by a Novel Atomic Layer Deposition Method

High stability mechanisms of quinary indium gallium zinc aluminum oxide multicomponent oxide films and thin film transistors

High Mobility Amorphous Indium-Gallium-Zinc-Oxide Thin-Film Transistor by Aluminum Oxide Passivation Layer

Mobility and Current Boosting of In-Ga-Zn-O thin-film transistors with Metal Capping Layer Oxidation

Ultra-thin gate insulator of atomic-layer-deposited AlO x and HfO x for amorphous InGaZnO thin-film transistors

Impact of cation compositions on the performance of thin-film transistors with amorphous indium gallium zinc oxide grown through atomic layer deposition

Mobility and Stability Enhancement of Amorphous In-Ga-Zn-O TFTs with Atomic Layer Deposited Al2O3/SiO2Stacked Insulators

Effects of Annealing Atmosphere on Electrical Performance and Stability of High-Mobility Indium-Gallium-Tin Oxide Thin-Film Transistors

AZO Thin Film Transistor Performance Enhancement by Capping an Aluminum Layer

High mobility of IGO/IGZO double-channel thin-film transistors by atomic layer deposition

Effect of Electrical Performance and Reliability by Adjustment of the Sequence and Concentration of HfAlOx on IWO Thin-Film Transistors

Improvement of Amorphous InGaZnO Thin-Film Transistor Reliability and Electrical Performance Using ALD SiO2 Interfacial Layer on PECVD SiO2 Gate Insulator

Specific contact resistivity reduction in amorphous IGZO thin-film transistors through a TiN/IGTO heterogeneous interlayer