Abstract:InGaZnO (IGZO) is currently the most prominent oxide semiconductor complement to low-temperature polysilicon for thin-film transistor (TFT) applications in flat panel displays. However, the compromised transport performance and bias stress instability are critical issues inhibiting its application in ultrahigh-resolution optoelectronic displays. Here, we report the fabrication of graded channel junctionless IGZO:O|N TFTs with both high transporting properties and good bias stress stability by systematic manipulation of oxygen vacancy (VO) defects through sequential O antidoping and O/N codoping of the continuous IGZO framework. The transporting properties and bias stress stability of the graded channel IGZO:O|N TFTs, which exhibited high field-effect mobilities close to 100 cm2 V–1 s–1, negligible performance degradations, and trivial threshold voltage shifts against gate bias stress and photobias stress, are simultaneously improved compared to those of the controlled single-channel uniformly doped IGZO:O TFTs, IGZO:N TFTs, and double-channel barrier-confined IGZO:O/IGZO:N TFTs. The synergistic improvements are attributed to the sequential mobility and stability enhancement effects of O antidoping and O/N codoping where triple saturation currents are induced by O antidoping of the front-channel regime while the trapped electrons and photoexcited holes in the back-channel bulk and surface regions are suppressed by O/N codoping. More importantly, fast accumulation and barrier-free full depletion are rationally realized by eliminating the junction interface within the graded channel layer. Our observation identifies that graded channel doping could be a powerful way to synergistically boost up the transport performance and bias stress stability of oxide TFTs for new-generation ultrahigh-definition display applications.The Supporting Information is available free of charge at <a class="ext-link" href="/doi/10.1021/acsami.0c13873?goto=supporting-info">https://pubs.acs.org/doi/10.1021/acsami.0c13873</a>.Cross-sectional SEM images of the bottom-gate top-contact IGZO TFTs, dielectric performance of the AHA gate insulator, wide XPS spectra of the IGZO films deposited with different fN2 values, channel length-dependent resistance measured by the transmission line method, PBS and NBIS stabilities of the IGZO:N TFTs fabricated with fN2 = 0.8 sccm, variation of fO2 and fN2 during sequential growth of the graded channel junctionless IGZO:O|N layer and the corresponding spatial distributions of VO and Ne, statistical studies on electrical properties for IGZO TFTs, schematic illustration of the device structure of bilayer-channel IGZO:O/IGZO:N TFTs, optical transmittance and band gap of the separate IGZO:O and IGZO:N channel layers grown on quartz substrates, and UPS valence band spectra of the IGZO:O (1.5 nm)/IGZO:N (8.0 nm) bilayer junction and IGZO:N (8.0 nm)/IGZO:O (1.5 nm) bilayer junction (<a class="ext-link" href="/doi/suppl/10.1021/acsami.0c13873/suppl_file/am0c13873_si_001.pdf">PDF</a>)This article has not yet been cited by other publications.

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