Abstract:In this study, the oxygen flow rate (OFR) dependence of negative bias illumination stress (NBIS) and positive bias stress (PBS) in amorphous indium-gallium-zinc-oxide (a-IGZO) thin-film transistor (TFT) devices was investigated. Unlike in previous studies, our study simultaneously considered and analyzed the bias stress-induced degradation mechanisms by charge trapping and defect creation. NBIS and PBS instability were measured according to the OFR splits of bottom-gate (BG) IGZO TFTs and the behavior of full subgap range density of states (DOS) was experimentally tracked with especial emphasis on deep-level oxygen vacancy (${V}_{\text {O}}$ ) peak. It was found that the observed DOS variation was consistent with the ${V}_{\text {O}}$ ionization model during NBIS. In addition, the threshold voltage shift by charge trapping (${\Delta } {V}_{\text {T,CT}}$ ) and the threshold voltage shift by defect creation, i.e., change of DOS, (${\Delta } {V}_{\text {T,DOS}}$ ) were separated and extracted through the subthreshold slope decomposition method. After NBIS, the threshold voltage shift (${\Delta } {V}_{\text {T}}$ ) was composed of a component by charge trapping and a component with the ionization of ${V}_{\text {O}}$ . After PBS, ${\Delta } {V}_{\text {T}}$ was dominated by a component arising due to charge trapping. Fitting through the stretched exponential function (SEF) was performed for each separately extracted ${\Delta } {V}_{\text {T}}$ , and the activation energy for each ${\Delta } {V}_{\text {T}}$ was extracted using the inverse Laplace transform method through the extracted ${\Delta } {V}_{\text {T0}}$ , $\tau $ , and $\beta $ . Activation energy by charge trapping and DOS was extracted from NBIS and PBS, respectively. As a result of simultaneously considering the two degradation mechanisms, the extracted activation energy was located between the previous values. Experimentally extracted sets of DOS-specific parameters before and after bias stress were applied to technology computer-aided design (TCAD) simulations. Accurate reproduction of TFT current–voltage (${I}$ –${V}$ ) curves before and after bias stress and recovery suggests that the methodology and parameter set used in this study are reasonable and potentially useful for a more robust and systematic analysis of the bias stress-induced instability in a-IGZO BG TFTs.

The Effect of Oxygen Partial Pressure During Active Layer Deposition on Bias Stability of A-Ingazno TFTs

Effect Of O-2 Flow Rate During Channel Layer Deposition On Negative Gate Bias Stress-Induced V-Th Shift Of A-Igzo Tfts

Effect of ${\rm O}_{2}$ Flow Rate During Channel Layer Deposition on Negative Gate Bias Stress-Induced $V_{\rm th}$ Shift of a-IGZO TFTs

Effect of oxygen partial pressure on the density of states of amorphous InGaZnO thin-film transistors

Total Subgap Range Density of States-Based Analysis of the Effect of Oxygen Flow Rate on the Bias Stress Instabilities in a-IGZO TFTs

Enhanced Bias Stress Stability of A-Ingazno Thin Film Transistors by Inserting an Ultra-Thin Interfacial InGaZnO:N Layer

Atmosphere Effect in Post-Annealing Treatments for Amorphous InGaZnO Thin-Film Transistors with SiOx Passivation Layers

Effect of Oxygen Plasma Treatment on the Performance of GQDs-Modulated InGaZnO Thin-Film Transistors

Effect of oxygen partial pressure on the performance of homojunction amorphous In-Ga-Zn-O thin-film transistors

Oxygen Adsorption Effect of Amorphous InGaZnO Thin-Film Transistors

Influence Of Passivation Layers On Positive Gate Bias-Stress Stability Of Amorphous Ingazno Thin-Film Transistors

Oxygen interstitial creation in a-IGZO thin-film transistors under positive gate-bias stress

Thermal Stability of Amorphous InGaZnO Thin Film Transistors with Different Oxygen-Contained Active Layers

Effect of reactive sputtered SiO x passivation layer on the stability of InGaZnO thin film transistors

Defect-induced instability mechanisms of sputtered amorphous indium tin zinc oxide thin-film transistors

Critical Effect of Oxygen Pressure in Pulsed Laser Deposition for Room Temperature and High Performance Amorphous In-Ga-Zn-O Thin Film Transistors

Influence of Channel Layer and Passivation Layer on the Stability of Amorphous InGaZnO Thin Film Transistors.

P‐6.1: Asymmetric Effects of Gate‐Bias Stress Voltage on the Stability under Positive and Negative Gate‐Bias Stress of A‐igzo TFTs

Effects Of Channel Composition And Gate Dielectrics On The Stability Of A-Igzo Tfts

Improvement of Negative Bias Temperature Illumination Stability of Amorphous IGZO Thin-Film Transistors by Water Vapor-Assisted High-Pressure Oxygen Annealing

The Role of Oxygen Vacancy and Hydrogen on the PBTI Reliability of ALD IGZO Transistors and Process Optimization