Abstract:In this study, the oxygen flow rate (OFR) dependence of negative bias illumination stress (NBIS) and positive bias stress (PBS) in amorphous indium-gallium-zinc-oxide (a-IGZO) thin-film transistor (TFT) devices was investigated. Unlike in previous studies, our study simultaneously considered and analyzed the bias stress-induced degradation mechanisms by charge trapping and defect creation. NBIS and PBS instability were measured according to the OFR splits of bottom-gate (BG) IGZO TFTs and the behavior of full subgap range density of states (DOS) was experimentally tracked with especial emphasis on deep-level oxygen vacancy (${V}_{\text {O}}$ ) peak. It was found that the observed DOS variation was consistent with the ${V}_{\text {O}}$ ionization model during NBIS. In addition, the threshold voltage shift by charge trapping (${\Delta } {V}_{\text {T,CT}}$ ) and the threshold voltage shift by defect creation, i.e., change of DOS, (${\Delta } {V}_{\text {T,DOS}}$ ) were separated and extracted through the subthreshold slope decomposition method. After NBIS, the threshold voltage shift (${\Delta } {V}_{\text {T}}$ ) was composed of a component by charge trapping and a component with the ionization of ${V}_{\text {O}}$ . After PBS, ${\Delta } {V}_{\text {T}}$ was dominated by a component arising due to charge trapping. Fitting through the stretched exponential function (SEF) was performed for each separately extracted ${\Delta } {V}_{\text {T}}$ , and the activation energy for each ${\Delta } {V}_{\text {T}}$ was extracted using the inverse Laplace transform method through the extracted ${\Delta } {V}_{\text {T0}}$ , $\tau $ , and $\beta $ . Activation energy by charge trapping and DOS was extracted from NBIS and PBS, respectively. As a result of simultaneously considering the two degradation mechanisms, the extracted activation energy was located between the previous values. Experimentally extracted sets of DOS-specific parameters before and after bias stress were applied to technology computer-aided design (TCAD) simulations. Accurate reproduction of TFT current–voltage (${I}$ –${V}$ ) curves before and after bias stress and recovery suggests that the methodology and parameter set used in this study are reasonable and potentially useful for a more robust and systematic analysis of the bias stress-induced instability in a-IGZO BG TFTs.

Effect of ${\rm O}_{2}$ Flow Rate During Channel Layer Deposition on Negative Gate Bias Stress-Induced $V_{\rm th}$ Shift of a-IGZO TFTs

Effect Of O-2 Flow Rate During Channel Layer Deposition On Negative Gate Bias Stress-Induced V-Th Shift Of A-Igzo Tfts

The Effect of Oxygen Partial Pressure During Active Layer Deposition on Bias Stability of A-Ingazno TFTs

P‐6.1: Asymmetric Effects of Gate‐Bias Stress Voltage on the Stability under Positive and Negative Gate‐Bias Stress of A‐igzo TFTs

Total Subgap Range Density of States-Based Analysis of the Effect of Oxygen Flow Rate on the Bias Stress Instabilities in a-IGZO TFTs

Analysis of Threshold Voltage Shift for Full VGS/VDS/Oxygen-Content Span under Positive Bias Stress in Bottom-Gate Amorphous InGaZnO Thin-Film Transistors

Improvement in Instability of Transparent ALD ZnO TFTs under Negative Bias Illumination Stress with SiO/AlO Bilayer Dielectric

Oxygen interstitial creation in a-IGZO thin-film transistors under positive gate-bias stress

Origin of degradation phenomenon under drain bias stress for oxide thin film transistors using IGZO and IGO channel layers

Negative-U Defect Passivation in Oxide-Semiconductor by Channel Defect Self-Compensation Effect to Achieve Low Bias Stress VTH Instability of Low-Thermal Budget IGZO TFT and FeFETs

Increased Threshold Voltage of Amorphous InGaZnO Thin-Film Transistors After Negative Bias Illumination Stress

Positive gate bias instability alleviated by self-passivation effect in amorphous InGaZnO thin-film transistors

Temperature Dependent Anomalous Threshold Voltage Modulation of a-IGZO TFT by Incorporating Variant Gate Stresses

Abnormal Threshold Voltage Shift Caused by Trapped Holes under Hot-Carrier Stress in A-Igzo TFTs

Effects Of Channel Composition And Gate Dielectrics On The Stability Of A-Igzo Tfts

Roles of Oxygen Interstitial Defects in Atomic-Layer Deposited InGaZnO Thin Films with Controlling the Cationic Compositions and Gate-Stack Processes for the Devices with Subμm Channel Lengths

Effect of Oxygen Plasma Treatment on the Performance of GQDs-Modulated InGaZnO Thin-Film Transistors

Gate Bias Stress-Induced Threshold Voltage Shift Effect of a-IGZO TFTs with Cu Gate

Analysis of Channel-Length Dependence of Residual Hydrogen Diffusion From the Gate Insulator During Oxygen Annealing Treatment in IGZO TFTs

Decreasing the V th shift of InGaZnO thin-film transistors under positive and negative bias stress using SU-8 as etch-stop and passivation layer

The effects of electric field and gate bias pulse on the migration and stability of ionized oxygen vacancies in amorphous In–Ga–Zn–O thin film transistors