Prediction of Heat and Mass Transfer During Compression in Reciprocating Compressors

M. S. Chong,H. Watson

Abstract:

What problem does this paper attempt to address?

Effects of Deposition Temperature on the Device Characteristics of Oxide Thin-Film Transistors Using In–Ga–Zn–O Active Channels Prepared by Atomic-Layer Deposition

Sung-Min Yoon,Nak-Jin Seong,Kyujeong Choi,Gi-Ho Seo,Woong-Chul Shin

DOI: https://doi.org/10.1021/acsami.7b04637

2017-06-27

Abstract:We demonstrated the physical and electrical properties of the In-Ga-Zn-O (IGZO) thin films prepared by atomic-layer deposition (ALD) method and investigated the effects of the ALD temperature. The film composition (atomic ratio of In:Ga:Zn) and film density were examined to be 1:1:3 and 5.9 g/cm3, respectively, for all the temperature conditions. The optical band gaps decreased from 3.81 to 3.21 eV when the ALD temperature increased from 130 to 170 °C. The amounts of oxygen-related defects such as oxygen vacancies increased with increasing the ALD temperature. It was found from the in situ temperature-dependent electrical conductivity measurements that the electronic natures including the defect structures and conduction mechanism of the IGZO thin films prepared at different temperatures showed marked variations. The carrier mobilities in the saturation regions (μsat's) for the fabricated thin film transistors (TFTs) using the IGZO channel layers were estimated to be 6.1 to 14.8 cm2 V-1 s-1 with increasing the ALD temperature from 130 to 170 °C. Among the devices, when the ALD temperature was controlled to be 150 °C, the IGZO TFTs showed the best performance, which resulted from the fact that the amounts of oxygen vacancies and interstitial defects could be appropriately modulated at this condition. Consequently, the μsat, subthreshold swing, and on/off ratio for the TFT using the IGZO channel prepared at 150 °C showed 10.4 cm2 V-1 s-1, 90 mV/dec, and 2 × 109, respectively. The threshold voltage shifts of this device could also be effectively reduced to be 0.6 and -3.2 V under the positive-bias and negative-bias-illumination stress conditions. These obtained characteristics can be comparable to those for the sputter-deposited IGZO TFTs.

materials science, multidisciplinary,nanoscience & nanotechnology
Control of Interfacial Defect States in the Flexible InGaZnO Thin Film Transistor with a 6FDA-MDA Gate Insulator by Using an Al 2 O 3 Interlayer

Min Jung Kim,Hyunjin Park,Hyunmin Hong,Sungmi Yoo,Kwangsik Jeong,Yun Ho Kim,Kwun-Bum Chung

DOI: https://doi.org/10.1021/acsaelm.3c01554

IF: 4.494

2024-02-05

ACS Applied Electronic Materials

Abstract:Recently, the high-mobility flexible thin film transistor (TFT) has been reported by using an organic–inorganic heterojunction structure to enhance the flexibility. This study investigates the origin of enhancement in an In–Ga–Zn–O (IGZO)-based TFT, utilizing 6FDA-based polyimide (6FDA-MDA) as the gate insulator (GI) to achieve a high-mobility flexible TFT. 6FDA-MDA has great advantages to apply to a flexible TFT as a gate insulator, such as a low leakage current, high mechanical stability, a room-temperature process, and smooth surface topographies. Through qualitative/quantitative defect analysis of the IGZO/GI interface, we find the origin of enhancement in the IGZO/6FDA-MDA TFT and suggest a facile method by applying an Al2O3 interlayer. By analyzing the physical properties of the IGZO TFT with a 6FDA-MDA GI, we find that diffused fluorine atoms from the 6FDA-MDA in the active area modulate the Fermi level toward the valence band in the interface. To prevent the diffusion of fluorine, we used the Al2O3 layer as a blocking layer, and it is confirmed by quantitative defect analysis that the defect states in the active/GI interface region are reduced by inserting the Al2O3 interlayer. By applying an Al2O3 interlayer between the GI and the active layer, the performance has been improved in terms of mobility, bias stability, and on/off ratio. Precisely, the field-effect mobility increased about 5 times from 0.05 to 14.57 cm2/(V s), the positive biased threshold voltage decreased to 8.0 from 14.42 V, and the on/off ratio increased to 2.62 × 108 from 3.77 × 106. Moreover, the TFT device with Al2O3 blocking can operate over 2000 times. Due to sputtering damage, fluorine could be diffused from 6FDA-MDA to the IGZO active area and generate defects in a channel. The formation energy and energy level in the band gap of the IGZO film with fluorine are obtained by density functional theory calculations. Fluorine causes the defect states in the IGZO/6FDA-MDA interface, and the energy level of each defect state is lowered to the conduction band by fluorine diffusion.

materials science, multidisciplinary,engineering, electrical & electronic
Graded Channel Junctionless InGaZnO Thin-Film Transistors with Both High Transporting Properties and Good Bias Stress Stability

Jie Liu,Jianlei Guo,Wenlong Yang,Cuiru Wang,Bin Yuan,Jia Liu,Zhiheng Wu,Qing Zhang,Dapu Liu,Huixin Chen,Yinyin Yu,Suilin Liu,Guosheng Shao,Zhiqiang Yao

DOI: https://doi.org/10.1021/acsami.0c13873

2020-09-04

Abstract:InGaZnO (IGZO) is currently the most prominent oxide semiconductor complement to low-temperature polysilicon for thin-film transistor (TFT) applications in flat panel displays. However, the compromised transport performance and bias stress instability are critical issues inhibiting its application in ultrahigh-resolution optoelectronic displays. Here, we report the fabrication of graded channel junctionless IGZO:O|N TFTs with both high transporting properties and good bias stress stability by systematic manipulation of oxygen vacancy (VO) defects through sequential O antidoping and O/N codoping of the continuous IGZO framework. The transporting properties and bias stress stability of the graded channel IGZO:O|N TFTs, which exhibited high field-effect mobilities close to 100 cm2 V–1 s–1, negligible performance degradations, and trivial threshold voltage shifts against gate bias stress and photobias stress, are simultaneously improved compared to those of the controlled single-channel uniformly doped IGZO:O TFTs, IGZO:N TFTs, and double-channel barrier-confined IGZO:O/IGZO:N TFTs. The synergistic improvements are attributed to the sequential mobility and stability enhancement effects of O antidoping and O/N codoping where triple saturation currents are induced by O antidoping of the front-channel regime while the trapped electrons and photoexcited holes in the back-channel bulk and surface regions are suppressed by O/N codoping. More importantly, fast accumulation and barrier-free full depletion are rationally realized by eliminating the junction interface within the graded channel layer. Our observation identifies that graded channel doping could be a powerful way to synergistically boost up the transport performance and bias stress stability of oxide TFTs for new-generation ultrahigh-definition display applications.The Supporting Information is available free of charge at <a class="ext-link" href="/doi/10.1021/acsami.0c13873?goto=supporting-info">https://pubs.acs.org/doi/10.1021/acsami.0c13873</a>.Cross-sectional SEM images of the bottom-gate top-contact IGZO TFTs, dielectric performance of the AHA gate insulator, wide XPS spectra of the IGZO films deposited with different fN2 values, channel length-dependent resistance measured by the transmission line method, PBS and NBIS stabilities of the IGZO:N TFTs fabricated with fN2 = 0.8 sccm, variation of fO2 and fN2 during sequential growth of the graded channel junctionless IGZO:O|N layer and the corresponding spatial distributions of VO and Ne, statistical studies on electrical properties for IGZO TFTs, schematic illustration of the device structure of bilayer-channel IGZO:O/IGZO:N TFTs, optical transmittance and band gap of the separate IGZO:O and IGZO:N channel layers grown on quartz substrates, and UPS valence band spectra of the IGZO:O (1.5 nm)/IGZO:N (8.0 nm) bilayer junction and IGZO:N (8.0 nm)/IGZO:O (1.5 nm) bilayer junction (<a class="ext-link" href="/doi/suppl/10.1021/acsami.0c13873/suppl_file/am0c13873_si_001.pdf">PDF</a>)This article has not yet been cited by other publications.

materials science, multidisciplinary,nanoscience & nanotechnology
Analysis of Channel-Length Dependence of Residual Hydrogen Diffusion From the Gate Insulator During Oxygen Annealing Treatment in IGZO TFTs

Po-Yu Yen,Kuan-Ju Zhou,Pei-Jun Sun,Yu-An Chen,Ya-Ting Chien,Bo-Shen Huang,Po-Yi Lee,Tzu-Hsuan Juan,Kui You Shao,Yu Shan Lin,Simon M. Sze,Ting-Chang Chang

DOI: https://doi.org/10.1109/led.2024.3424579

IF: 4.8157

2024-08-28

IEEE Electron Device Letters

Abstract:In previous research, it has been observed that the threshold voltage (V ) in IGZO TFTs will shift in the positive direction after the oxygen annealing treatment. However, in this study, IGZO TFTs with an etch stop layer (ESL) structure are annealed with oxygen at 250°C resulting in an abnormal VTH left-shift in short-channel devices. To better clarify the changes in the device characteristics, the output characteristics before and after annealing are compared. After the oxygen annealing treatment, the current-voltage (ID–V ) output characteristics of the short-channel devices are enhanced, while those of the long-channel devices are degraded significantly, compared to the properties of the pristine devices. These trends in ID-VD curves can be further verified through capacitance-voltage (C-V) curves. The rising parasitic capacitance and C-V left shift imply the occurrence of hydrogen diffusion. Precisely speaking, it is the presence of residual hydrogen remaining in the gate insulator (GI) of Si3N4 that causes the changes in the device characteristics after oxygen annealing treatment. Subsequently, the physical models and the energy band diagrams are proposed to elucidate the channel-length-dependent behavior of residual hydrogen diffusion from the gate insulator after the oxygen annealing treatment.

engineering, electrical & electronic
Tri‐Layer Heterostructure Channel of a‐IGZO/a‐ITZO/a‐IGZO Toward Enhancement of Transport and Reliability in Amorphous Oxide Semiconductor Thin Film Transistors

Ke Hu,Zean Guo,Jiawei Wang,Congyan Lu,Mingliang Wang,Tianyuan Wang,Fuxi Liao,Guanhua Yang,Nianduan Lu,Ling Li

DOI: https://doi.org/10.1002/aelm.202400266

IF: 6.2

2024-09-10

Advanced Electronic Materials

Abstract:Thin film transistors based on a‐IGZO/a‐ITZO/a‐IGZO heterostructural channel are fabricated. The TFTs exhibited outstanding electrical performances, with field effect mobility exceeding 50 cm2V‐1s‐1, ideally small positive/negative‐bias‐stress voltage shifts down to 0.1/0.004 V, and optimized sub‐threshold swing as low as 80 mV dec−1. Improvements in the quality of transport interface verified by magnetotransport and Hall effect account for enhanced transport performances and device reliabilities. Thin film transistors (TFTs) based on amorphous oxide semiconductors (AOS) are promising candidates for panel displays. However, the trade‐off between mobility and reliability in AOS‐TFTs hinders their further applications in next‐generation display techniques and newly developed logic and memory circuits. Here, a structural strategy is proposed for the mobility‐reliability trade‐off, via a triple‐layer channel containing a Ga‐free high‐mobility layer (amorphous InSnZnO, a‐ITZO) sandwiched by two Ga‐rich layers (amorphous InGaZnO, a‐IGZO) with higher reliability. Gate‐induced carrier accumulation is verified mainly being energetically confined within the high mobility a‐ITZO layer, at the newly defined a‐ITZO/a‐IGZO interface. Compared to single layer a‐ITZO‐TFTs, triple‐channel a‐IGZO/a‐ITZO/a‐IGZO TFTs (GTG‐TFTs) exhibit outstanding stability and electrical transport performances, with suppressed positive/negative‐bias‐stress voltage shifts from 1/0.3 to 0.1/0.004 V, enhanced field effect mobility from ≈40 to 56 cm2V−1s−1, and optimized sub‐threshold swing down to 80 mV dec−1. Further numerical simulations and charge transport characterizations, including magnetotransport and gate‐induced Hall effect, indicate that charge transport in tri‐layer structure is less affected by energetic disorders present at gate insulator interfaces.

materials science, multidisciplinary,physics, applied,nanoscience & nanotechnology
A dual function metal oxide interlayer as an oxygen-defect inhibitor and a gate-leakage suppressor for a hysteresis-free, solution-processed top-gated IGZO TFT

Saravanan Kumaran,Bernice Karsten,Michael Zharnikov,Yian Tai

DOI: https://doi.org/10.1039/d4tc00705k

IF: 6.4

2024-05-23

Journal of Materials Chemistry C

Abstract:Amorphous oxide thin-film transistors (TFTs), including a-InGaZnO (IGZO) in particular, are promising devices for display and other applications. For commercial fabrication, IGZO is typically fabricated using vacuum-based methods, involving high costs and complex equipment. These drawbacks are overcome by cost-effective, solution-based processes, which, however, do not deliver the IGZO layer of the same quality as vacuum-based methods. This results in a trade-off between mobility and stability of the respective devices, diminishing their overall performance. The compromise between mobility and stability in these devices arises from defects, notably oxygen vacancies, during solution-based fabrication. Here, we suggest a solution to this problem by the introduction of a MgO or AlO x interlayer between the IGZO semiconductor and polymer insulator in a top-gate, bottom-contact TFT. The Mg and Al ions, originating from such an interlayer, suppress the appearance of the interfacial oxygen vacancies, serving as the major source of device instability, preserving at the same time bulk oxygen vacancies, promoting the mobility. In addition to this favorable function, the MgO/AlO x interlayer, characterized by a wide band gap, improves the performance of the joint dielectric layer by reducing the leakage current. As the result of both these favorable properties within the proposed strategy, a stable, hysteresis-free, and considerably performing device with a mobility of 4.6 cm 2 V −1 s −1 , an ON/OFF ratio exceeding >10 6.5 , and a shift of the threshold voltage of 0.6 V could be fabricated, with all these parameters being superior as compared to the standard TFTs.

materials science, multidisciplinary,physics, applied
[Composition and food value of the flat pea (Lathyrus sylvestris L.)].

G. Flachowsky,H. Bähr,M. Anke,K. Gruhn,H. Löhnert,I. Wolf

DOI: https://doi.org/10.1080/17450398209421028

1982-05-01

Abstract:Flat pea (Lathyrus sylvestris L.) is suitable as 'pioneer plant' for the recultivation of slag heaps and mining areas for agricultural production. Flat pea contains between 20 and 30% crude protein in the dry matter and is richer in protein than other feed legumes. It is comparable to foxtail clover and lucerne as regards the content of amino acids (g/16 g N) and minerals. The digestibility of the crude nutrients of various dried products of flat pea was ascertained in seven experiments with five rams. The digestibility of the organic matter of the hay (before budding) was 66.2%, energy concentration 526 EFU/kg DM; 55% and 410 EFU/kg DM were ascertained for seed straw. The protein digestibility for hay and dried green fodder varied between 72.3 and 75.8%. Since there have been no reports lathyrogenous substances in the vegetative parts of flat pea, its use as green fodder or dried green fodder for feeding sheep, cattle or wild ruminants is possible.
High-Performance of InGaZnO TFTs With an Ultrathin 5-nm Al2O3 Gate Dielectric Enabled by a Novel Atomic Layer Deposition Method

Pingping Li,Jun Yang,Xingwei Ding,Xifeng Li,Jianhua Zhang

DOI: https://doi.org/10.1109/JEDS.2024.3353340

2024-01-01

IEEE Journal of the Electron Devices Society

Abstract:Al2O3, as one of the gate dielectric materials for thin film transistors (TFTs), has been extensively investigated because of its large bandgap, high breakdown field, and good thermal stability. However, the further development of Al2O3 thin films is limited by the presence of defects such as oxygen vacancies, self-interstitial atoms, or impurity elements. To overcome this obstacle, we have developed a novel method for fabricating Al2O3 thin films by using the atomic layer deposition (ALD) technique. This method replaces the conventional Trimethylaluminium (TMA)/H2O cycles with TMA/TMA/H2O/H2O cycles (referred to as 'double cycles'), to deposit the Al2O3 . The 5-nm ultrathin Al2O3 film showed a high areal capacitance of 660 nF/cm(2) at 20 Hz, and a relatively low current density of 10(-8) A/cm(2) at 1 MV/cm. InGaZnO (IGZO) TFTs with ultrathin Al2O3 gate dielectric grown by double cycles exhibited outstanding performances, such as a near theoretical limit subthreshold swing (SS) of 70 mV/decade, a higher on/off current ratio (I-on/I-off) of 106, an increased field-effect mobility (mu) of 6.5 cm(2)/Vs, a lower threshold voltage (V-th) of 0.2 V, and a low operating voltage of 3 V. These results are superior to the IGZO TFTs with Al2O3 dielectrics deposited using the single TMA/H2O cycle. Therefore, the implementation of 'double cycles' in the fabrication of dielectrics through ALD demonstrates considerable potential for future application in low-power electronic devices.
Back-End-of-Line-Compatible Scaled InGaZnO Transistors by Atomic Layer Deposition

Jie Zhang,Zehao Lin,Zhuocheng Zhang,Ke Xu,Hongyi Dou,Bo Yang,Adam Charnas,Dongqi Zheng,Xinghang Zhang,Haiyan Wang,Peide D. Ye

DOI: https://doi.org/10.1109/ted.2023.3312357

IF: 3.1

2023-01-01

IEEE Transactions on Electron Devices

Abstract:In this work, we report on back-end-of-line (BEOL)-compatible InGaZnO indium gallium zinc oxide (IGZO) thin film transistors (TFTs) with extreme scaled device dimension including channel thickness ( $\textit{T}_{\text{ch}}\text{)}$ down to 1.5 nm and channel length ( $\textit{L}_{\text{ch}}\text{)}$ down to 60 nm. These IGZO channels with a high In atomic ratio of 92% were derived by atomic-layer-deposition (ALD), where the IGZO thickness could be precisely controlled by ALD cycles. These TFTs were subjected to a mild O $_{\text{2}}$ annealing at 250 $^{\circ}$ C, the effect of which is also systematically investigated. It is found that both $\textit{T}_{\text{ch}}$ and O $_{\text{2}}$ annealing have significant effects on TFT performance. By using optimized O $_{\text{2}}$ annealing conditions, the ALD IGZO TFTs with scaled $\textit{T}_{\text{ch}}$ of 1.5 nm and $\textit{L}_{\text{ch}}$ of 60 nm exhibit desirable electrical performance including a high ON/OFF ratio ( $\textit{I}_{\biosc{on}}$ / $\textit{I}_{\biosc{off}}\text{)}$ $\sim$ 10 $^{\text{11}}$ , a decent high Ion of 354 $\mu$ A/ $\mu$ m under $\textit{V}_{\text{DS}}$ of 1.2 V, a steep subthreshold swing (SS) of 68 mV/dec, a small drain-induced-barrier-lowering (DIBL) of 30 mV/V, and a normal-off operation, which is comparable to the state-of-art sputtered IGZO TFTs. Furthermore, the optimized TFTs also exhibit significantly resolved threshold voltage ( $\textit{V}_{\text{T}}\text{)}$ roll-off and a remarkably high degree of stability to the positive gate bias stress (PBS). A trap model with its possible microscopic origin is proposed, which explains well the dependence of electrical performance on both $\textit{T}_{\text{ch}}$ and O $_{\text{2}}$ annealing, thus providing a new insight into the reliability of IGZO TFTs.

engineering, electrical & electronic,physics, applied
High-Performance of InGaZnO TFTs With an Ultrathin 5-nm Al2O3 Gate Dielectric Enabled by a Novel Atomic Layer Deposition Method

Pingping Li,Jun Yang,Xingwei Ding,Xifeng Li,Jianhua Zhang

DOI: https://doi.org/10.1109/jeds.2024.3353340

2024-02-28

IEEE Journal of the Electron Devices Society

Abstract:Al2O3, as one of the gate dielectric materials for thin film transistors (TFTs), has been extensively investigated because of its large bandgap, high breakdown field, and good thermal stability. However, the further development of Al2O3 thin films is limited by the presence of defects such as oxygen vacancies, self-interstitial atoms, or impurity elements. To overcome this obstacle, we have developed a novel method for fabricating Al2O3 thin films by using the atomic layer deposition (ALD) technique. This method replaces the conventional Trimethylaluminium (TMA)/H2O cycles with TMA/TMA/H2O/H2O cycles (referred to as 'double cycles'), to deposit the Al2O3. The 5-nm ultrathin Al2O3 film showed a high areal capacitance of 660 nF/cm2 at 20 Hz, and a relatively low current density of 10−8 A/cm2 at 1 MV/cm. InGaZnO (IGZO) TFTs with ultrathin Al2O3 gate dielectric grown by double cycles exhibited outstanding performances, such as a near theoretical limit subthreshold swing (SS) of 70 mV/decade, a higher on/off current ratio ) of 106, an increased field-effect mobility ( ) of 6.5 cm2/Vs, a lower threshold voltage of 0.2 V, and a low operating voltage of 3 V. These results are superior to the IGZO TFTs with Al2O3 dielectrics deposited using the single TMA/H2O cycle. Therefore, the implementation of 'double cycles' in the fabrication of dielectrics through ALD demonstrates considerable potential for future application in low-power electronic devices.

engineering, electrical & electronic
High-Performance of InGaZnO TFTs With an Ultrathin 5-nm Al₂O₃ Gate Dielectric Enabled by a Novel Atomic Layer Deposition Method

Pingping Li,Jun Yang,Xingwei Ding,Xifeng Li,Jianhua Zhang

DOI: https://doi.org/10.1109/JEDS.2024.3353340

2024-01-01

IEEE Journal of the Electron Devices Society

Abstract:Al2O3, as one of the gate dielectric materials for thin film transistors (TFTs), has been extensively investigated because of its large bandgap, high breakdown field, and good thermal stability. However, the further development of Al2O3 thin films is limited by the presence of defects such as oxygen vacancies, self-interstitial atoms, or impurity elements. To overcome this obstacle, we have developed a novel method for fabricating Al2O3 thin films by using the atomic layer deposition (ALD) technique. This method replaces the conventional Trimethylaluminium (TMA)/H2O cycles with TMA/TMA/H2O/H2O cycles (referred to as ‘double cycles’), to deposit the Al2O3. The 5-nm ultrathin Al2O3 film showed a high areal capacitance of 660 nF/cm2 at 20 Hz, and a relatively low current density of 10−8 A/cm2 at 1 MV/cm. InGaZnO (IGZO) TFTs with ultrathin Al2O3 gate dielectric grown by double cycles exhibited outstanding performances, such as a near theoretical limit subthreshold swing (SS) of 70 mV/decade, a higher on/off current ratio $(I_{\mathrm{ on}} / I_{\mathrm{ off}}$ ) of 106, an increased field-effect mobility ( $\mu $ ) of 6.5 cm2/Vs, a lower threshold voltage $(V_{\mathrm{ th}})$ of 0.2 V, and a low operating voltage of 3 V. These results are superior to the IGZO TFTs with Al2O3 dielectrics deposited using the single TMA/H2O cycle. Therefore, the implementation of ‘double cycles’ in the fabrication of dielectrics through ALD demonstrates considerable potential for future application in low-power electronic devices.
Exploration of Chemical Composition of In–Ga–Zn–O System via PEALD Technique for Optimal Physical and Electrical Properties

TaeHyun Hong,Yoon‐Seo Kim,Su‐Hwan Choi,Jun Hyung Lim,Jin‐Seong Park

DOI: https://doi.org/10.1002/aelm.202201208

IF: 6.2

2023-02-08

Advanced Electronic Materials

Abstract:Adjusting the metal composition of In–Ga–Zn–O (IGZO) is required to develop heterostack and/or 3D structures. Sequential plasma‐enhanced atomic layer deposition (PEALD) methods are introduced to adjust the composition of IGZO, and novel crystal structures are achieved. Based on a comprehensive analysis of the resulting physical and electrical properties, this work identifies the optimal In–Ga–Zn composition ratio for applied thin‐film transistor (TFT) applications. In–Ga–Zn–O (IGZO) material has been researched due to its favorable electrical characteristics for application in thin‐film transistor (TFT) applications such as low off current and relatively high mobility. However, most recently, as the developing and expanding application fields, conventional IGZO is a challenging aspect because higher mobility and excellent step‐coverage are required to be applied to high‐resolution displays and 3D NAND. In this regard, atomic layer deposition (ALD) is suggested as a novel deposition method for tackling issues. Here, this work systematically synthesizes IGZO films with various compositions by the supercycle technique of plasma‐enhanced ALD (PEALD) to determine the optimum metal cation composition range of the IGZO system for high‐mobility TFTs. The trends in the metal composition dependent electrical properties of ALD processed IGZO films are comparable to the previously reported results, while the structural properties are exclusive. Since both microstructure and carrier concentration affect to device characteristics complexly, the optimal In–Ga–Zn region is newly demonstrated via PEALD (XIn: 0.56–0.63, XGa: 0.13–0.17, XZn: 0.17–0.34). In this region, the device exhibits a remarkably high μFE of 41.4–43.7 cm2 V−1 s−1, a low subthreshold swing (SS) of 0.24–0.25 V decade−1, an initial threshold voltage (Vth) of −0.9 to −1.0 V, and a slight Vth shift (0.01 V) under the positive bias temperature stability (PBTS).

materials science, multidisciplinary,physics, applied,nanoscience & nanotechnology
Enhancing Reliability of Short-channel Dual gate InGaZnO Thin Film Transistors by Bottom-gate Oxide Engineering

Kuan-Ju Zhou,Ting-Chang Chang,Po-Yu Yen,Yu-An Chen,Ya-Ting Chien,Bo-Shen Huang,Po-Yi Lee,Tzu-Hsuan Juan,Simon M. Sze,Yang-Shun Fan,Chen-Shuo Huang,Chih-Hung Tsai

DOI: https://doi.org/10.1109/led.2024.3363131

IF: 4.8157

2024-01-01

IEEE Electron Device Letters

Abstract:Previous studies have reported the formation of n+ regions in amorphous oxide semiconductor (AOS) thin-film transistors (TFTs) upon doping hydrogen (H) to the AOS channel layer from the deposition atmosphere of overlayer passivation / interlayer dielectrics (ILD) e.g. by hydrogenated plasma-enhanced chemical vapor deposition. Thus, self-aligned coplanar TFT structures can be easily formed. However, H-doping causes indiffusion into the channel, thus shortening the actual channel length from the designed size, resulting in a type of “short-channel effect.” In this work, we applied bottom-gate oxide engineering wherein N2O plasma treatment on a bottom-gate oxide suppresses the hydrogen diffusion to the amorphous IGZO (a-IGZO), thus minimizing the short-channel effect. The lateral hydrogen diffusion length can be remarkably reduced from 1.44 to 0.26 μm. Additionally, a current stress stability test was conducted. The current–voltage and capacitance–voltage results show that the use of bottom-gate oxide engineering improved the reliability of the IGZO TFTs.

engineering, electrical & electronic
Improvement of Amorphous InGaZnO Thin-Film Transistor Reliability and Electrical Performance Using ALD SiO2 Interfacial Layer on PECVD SiO2 Gate Insulator

Taeho Lee,Saeroonter Oh

DOI: https://doi.org/10.1109/ted.2024.3355025

IF: 3.1

2024-03-06

IEEE Transactions on Electron Devices

Abstract:Insulator engineering is required to improve the reliability of amorphous indium gallium zinc oxide (a-IGZO) thin-film transistors (TFTs). Silicon dioxide (SiO2), which is widely used as the gate insulator (GI), is mainly deposited using plasma-enhanced chemical vapor deposition (PECVD) owing to its high deposition rate and large-area deposition capability at a relatively low temperature. However, SiO2 deposited by PECVD may contain high hydrogen content, and hydrogen within the IGZO film acts as an electron donor or passivates oxygen-related defects. Excessive hydrogen diffusion from PECVD SiO2 to the IGZO film during GI deposition and postdeposition annealing often results in severe negative shift of the threshold voltage. In this article, we used PECVD SiO2 insulator with an interfacial SiO2 layer deposited by atomic layer deposition (ALD) to control the hydrogen diffusion flux while maintaining the defect passivation role of hydrogen and reducing electron trapping defects within the GI. Compared to a device with no interfacial layer, the IGZO device with the ALD interfacial layer improved field-effect mobility from 8.05 to 10.97 cm2/V·s and also improved positive and negative bias stress (NBS) reliability by 53.3% and 56.2%, respectively.

engineering, electrical & electronic,physics, applied
Effect Of O-2 Flow Rate During Channel Layer Deposition On Negative Gate Bias Stress-Induced V-Th Shift Of A-Igzo Tfts

Xiang Xiao,Wei Deng,Shipeng Chi,Yang Shao,Xin He,Longyan Wang,Shengdong Zhang

DOI: https://doi.org/10.1109/TED.2013.2286636

IF: 3.1

2013-01-01

IEEE Transactions on Electron Devices

Abstract:The effect of O-2 flow rate during the sputtered deposition of channel layer on the negative gate-bias stress (NGBS)-induced threshold voltage (V-th) instability of a-IGZO TFTs is investigated. It is shown that the negative gate-bias stress results in a negative V-th shift of the a-IGZO TFTs, and the shift amount decreases with the increase in O-2 flow rate. It is proposed that the V-th shift originates from the electron-detrapping from the oxygen vacancy-related donor-like states at the channel/dielectric interface. As the O-2 flow rate increases, the density of donor-like states is decreased and the distribution of neutral donor-like states below E-F is also reduced. Therefore, the amount of V-th shift caused by the positively charged trap states and electrons injecting into the channel from the donor-like states decreases with the O-2 flow rate increase. It is also shown experimentally that while the electrical characteristics of the a-IGZO TFTs are generally improved with the O-2 flow rate increase, they are degraded if an excess O-2 is introduced. An optimal O-2/Ar flow rate ratio of about 5 sccm/45 sccm is suggested to make a trade-off between the electrical performances and the gate-bias stress-induced V-th instability.
Electronic structure of oxygen-vacancy defects in amorphous In-Ga-Zn-O semiconductors

Hyeon-Kyun Noh,K. J. Chang,Byungki Ryu,Woo-Jin Lee

DOI: https://doi.org/10.1103/physrevb.84.115205

IF: 3.7

2011-09-15

Physical Review B

Abstract:We perform first-principles density functional calculations to investigate the atomic and electronic properties of various O-vacancy (VO) defects in amorphous indium gallium zinc oxides (a-IGZO). The formation energies of VO have a tendency to increase with increasing number of neighboring Ga atoms, whereas they are generally low in the environment surrounded with In atoms. Thus, adding Ga atoms suppresses the formation of O-deficiency defects, which are considered as the origin of device instability in a-IGZO-based thin film transistors. The conduction band edge state is characterized by the In s orbital and insensitive to disorder, in good agreement with the experimental finding that increasing the In content enhances the carrier density and mobility. In a-IGZO, while most VO defects are deep donors, some of the defects act as shallow donors due to local environments different from those in crystalline oxides. As ionized O vacancies can capture electrons, it is suggested that these defects are responsible for positive shifts of the threshold voltage observed under positive gate bias stress. Under light illumination stress, VO defects can be ionized, becoming VO2+ defects due to the negative-U behavior. When electrons are captured by applying a negative bias voltage, ionized VO2+ defects return to the original neutral charge state. Through molecular dynamics simulations, we find that the initial neutral state is restored by annealing, in good agreement with experiments, although the annealing temperature depends on the local environment. Our calculations show that VO defects play an important role in the instability of a-IGZO-based devices.

physics, condensed matter, applied,materials science, multidisciplinary
Analysis of Threshold Voltage Shift for Full VGS/VDS/Oxygen-Content Span under Positive Bias Stress in Bottom-Gate Amorphous InGaZnO Thin-Film Transistors

Je-Hyuk Kim,Jun Tae Jang,Jong-Ho Bae,Sung-Jin Choi,Dong Myong Kim,Changwook Kim,Yoon Kim,Dae Hwan Kim

DOI: https://doi.org/10.3390/mi12030327

IF: 3.4

2021-03-19

Micromachines

Abstract:In this study, we analyzed the threshold voltage shift characteristics of bottom-gate amorphous indium-gallium-zinc-oxide (IGZO) thin-film transistors (TFTs) under a wide range of positive stress voltages. We investigated four mechanisms: electron trapping at the gate insulator layer by a vertical electric field, electron trapping at the drain-side GI layer by hot-carrier injection, hole trapping at the source-side etch-stop layer by impact ionization, and donor-like state creation in the drain-side IGZO layer by a lateral electric field. To accurately analyze each mechanism, the local threshold voltages of the source and drain sides were measured by forward and reverse read-out. By using contour maps of the threshold voltage shift, we investigated which mechanism was dominant in various gate and drain stress voltage pairs. In addition, we investigated the effect of the oxygen content of the IGZO layer on the positive stress-induced threshold voltage shift. For oxygen-rich devices and oxygen-poor devices, the threshold voltage shift as well as the change in the density of states were analyzed.

chemistry, analytical,nanoscience & nanotechnology,instruments & instrumentation,physics, applied
Stability and gap states of amorphous In-Ga-Zn-Ox thin film transistors: Impact of sputtering configuration and post-annealing on device performance

Kosuke Takenaka,Shota Nunomura,Yuji Hayashi,Hibiki Komatsu,Susumu Toko,Hitoshi Tampo,Yuichi Setsuhara

DOI: https://doi.org/10.1016/j.tsf.2024.140203

IF: 2.1

2024-02-01

Thin Solid Films

Abstract:Stability of amorphous In-Ga-Zn-Ox (a-IGZO) thin-film-transistors (TFTs) is studied from a viewpoint of gap states, associated with oxygen-related defects and structural disordering. The a-IGZO gap states are controlled through the film preparation by magnetron sputtering under two different configurations and post-annealing in oxygen atmosphere. The distribution of gap states is then evaluated from the subgap absorption spectrum, which is measured by a constant photocurrent measurement technique. With this known distribution, a-IGZO TFTs are fabricated, and the stability of the TFT performances is examined through the negative bias induced stability (NBIS) experiments. The results suggest that a negative threshold voltage shift, induced by NBIS, is improved by reducing the density of gap states, i.e., narrowing the gap state distribution. The reduction of gap states also contributes to the improvement of subthreshold swing.

materials science, multidisciplinary,physics, applied, condensed matter, coatings & films
Effect of oxygen partial pressure on the performance of homojunction amorphous In-Ga-Zn-O thin-film transistors

Zhi-Yue Li,Shu-Mei Song,Wan-Xia Wang,Jian-Hong Gong,Yang Tong,Ming-Jiang Dai,Song-Sheng Lin,Tian-Lin Yang,Hui Sun,Zhiyue Li,Wanxia Wang,Jianhong Gong,Songsheng Lin,Tianlin Yang,Hui SUN

DOI: https://doi.org/10.1088/1361-6528/ac990f

IF: 3.5

2022-10-13

Nanotechnology

Abstract:In this study, the homojunction thin-film transistors (TFTs) with amorphous indium gallium zinc oxide (a-IGZO) as active channel layers and source/drain electrodes were fabricated by RF magnetron sputtering. The effect of oxygen partial pressure on the phase, microstructure, optical and electrical properties of IGZO thin films was investigated. The results showed that amorphous IGZO thin films always exhibit a high transmittance above 90% and wide band gaps of around 3.9 eV. The resistivity increases as the IGZO thin films are deposited at a higher oxygen partial pressure due to the depletion of oxygen vacancies. In addition, the electrical behaviors in homojunction IGZO TFTs were analyzed. When the active channel layers were deposited with an oxygen partial pressure of 1.96%, the homojunction IGZO TFTs exhibited optimal transfer and output characteristics with a field-effect mobility of 13.68 cm2 V-1s-1. Its sub-threshold swing, threshold voltage and on/off ratio are 0.6 V/decade, 0.61 V and 107, respectively.

materials science, multidisciplinary,physics, applied,nanoscience & nanotechnology
Effects Of Channel Composition And Gate Dielectrics On The Stability Of A-Igzo Tfts

J. K. Yao,S. D. Zhang

2011-01-01

Abstract:The electrical and optical stability of amorphous indium gallium zinc oxide (a-IGZO) thin film transistors (TFTs) related to the channel composition (the concentration of oxygen vacancy, V-O(2+)) and gate dielectrics are discussed. With the filling of V-O(2+), the electron density (Ne) in a-IGZO decreases from 7.5 to 3.8 (x10(16)cm(-3)) with the increase of Fermi level and decrease of density of deep charged traps, and therefore the electrical stability of TFTs decreases from A Vth of 4.5 to 10V. The optical stability of a-IGZO TFTs is also sensitive to the V-O(2+). With the increase of V-O(2+) the absorption increases and Eg decreases for a-IGZO, therefore the number of generating photoelectrons increases and the stability of TFT. decreases. The SiNx-gated TFT shows good electrical stability, but its optical stability is an issue, which shows a larger off-state photo leakage current (Delta I-d similar to 13 mu A) and decrease of Vth (vertical bar Delta V-th vertical bar>14V) than those of the SiO2-gated TFT (Delta I-d similar to 12 nA, vertical bar Delta V-th vertical bar similar to 8V). The model of charge trapping at the interface of gate dielectric/a-IGZO is only valid for the mechanism of electrical stability. It is proposed that due to the larger absorption of visible light of SiNX gate dielectric, and the smaller Delta Ev between SiNX and a-IGZO film, the photo created holes carriers in a-IGZO.chginel can be injected more easily into SiNX during light on resulting a significant increase of N-e in a-IGZO, therefore an apparent decrease of V-th for TFT.

Prediction of Heat and Mass Transfer During Compression in Reciprocating Compressors

Effects of Deposition Temperature on the Device Characteristics of Oxide Thin-Film Transistors Using In–Ga–Zn–O Active Channels Prepared by Atomic-Layer Deposition

Control of Interfacial Defect States in the Flexible InGaZnO Thin Film Transistor with a 6FDA-MDA Gate Insulator by Using an Al 2 O 3 Interlayer

Graded Channel Junctionless InGaZnO Thin-Film Transistors with Both High Transporting Properties and Good Bias Stress Stability

Analysis of Channel-Length Dependence of Residual Hydrogen Diffusion From the Gate Insulator During Oxygen Annealing Treatment in IGZO TFTs

Tri‐Layer Heterostructure Channel of a‐IGZO/a‐ITZO/a‐IGZO Toward Enhancement of Transport and Reliability in Amorphous Oxide Semiconductor Thin Film Transistors

A dual function metal oxide interlayer as an oxygen-defect inhibitor and a gate-leakage suppressor for a hysteresis-free, solution-processed top-gated IGZO TFT

[Composition and food value of the flat pea (Lathyrus sylvestris L.)].

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Back-End-of-Line-Compatible Scaled InGaZnO Transistors by Atomic Layer Deposition

High-Performance of InGaZnO TFTs With an Ultrathin 5-nm Al2O3 Gate Dielectric Enabled by a Novel Atomic Layer Deposition Method

High-Performance of InGaZnO TFTs With an Ultrathin 5-nm Al&#x2082;O&#x2083; Gate Dielectric Enabled by a Novel Atomic Layer Deposition Method

Exploration of Chemical Composition of In–Ga–Zn–O System via PEALD Technique for Optimal Physical and Electrical Properties

Enhancing Reliability of Short-channel Dual gate InGaZnO Thin Film Transistors by Bottom-gate Oxide Engineering

Improvement of Amorphous InGaZnO Thin-Film Transistor Reliability and Electrical Performance Using ALD SiO2 Interfacial Layer on PECVD SiO2 Gate Insulator

Effect Of O-2 Flow Rate During Channel Layer Deposition On Negative Gate Bias Stress-Induced V-Th Shift Of A-Igzo Tfts

Electronic structure of oxygen-vacancy defects in amorphous In-Ga-Zn-O semiconductors

Analysis of Threshold Voltage Shift for Full VGS/VDS/Oxygen-Content Span under Positive Bias Stress in Bottom-Gate Amorphous InGaZnO Thin-Film Transistors

Stability and gap states of amorphous In-Ga-Zn-Ox thin film transistors: Impact of sputtering configuration and post-annealing on device performance

Effect of oxygen partial pressure on the performance of homojunction amorphous In-Ga-Zn-O thin-film transistors

Effects Of Channel Composition And Gate Dielectrics On The Stability Of A-Igzo Tfts

High-Performance of InGaZnO TFTs With an Ultrathin 5-nm Al₂O₃ Gate Dielectric Enabled by a Novel Atomic Layer Deposition Method