Abstract:Roles of oxygen interstitial defects located in the In-Ga-Zn-O (IGZO) thin films prepared by atomic layer deposition were investigated with controlling the cationic compositions and gate-stack process conditions. It was found from the spectroscopic ellipsometry analysis that the excess oxygens increased with increasing the In contents within the IGZO channels. While the device using the IGZO channel with an In/Ga ratio of 0.2 did not show marked differences with the variations in the oxidant types during the gate-stack formation, the device characteristics were severely deteriorated with increasing the In/Ga ratio to 1.4, when the Al2O3 gate insulator (GI) was prepared with the H2O oxidants (H2O-Al2O3) due to a higher amount of excess oxygen in the channel. Additionally, during the deposition process of the Al-doped ZnO (AZO) gate electrode (GE) replacing from the indium-tin oxide (ITO) GE, the thermal annealing effect at 180 °C facilitated the passivation of oxygen vacancy and the strengthening of metal-oxygen bonding, which could stabilize the TFT operations. From these results, the gate-stack structure employing O3-processed Al2O3 GI (O3-Al2O3) and AZO GE (OA) was suggested to be most suitable for the device using IGZO channel with a higher In content. On the other hand, the device employing H2O-Al2O3 GI and AZO GE exhibited larger negative shifts of threshold voltage (VTH) under positive-bias-temperature stress (PBTS) condition than the device employing O3- Al2O3 GI and ITO GE due to larger hydrogen contents within the gate stacks. Anomalous negative shifts of VTH were accelerated with increasing the In contents of the IGZO channel. When the channel length of the fabricated device were scaled down to submicrometer regime, the OA gate stacks successfully alleviated the short-channel effects.

Oxygen Adsorption Effect of Amorphous InGaZnO Thin-Film Transistors

Modulation of Optical and Electrical Properties of Sputtering-Derived Amorphous Ingazno Thin Films by Oxygen Partial Pressure

Thermal Stability of Amorphous InGaZnO Thin Film Transistors with Different Oxygen-Contained Active Layers

Effect of oxygen partial pressure on the performance of homojunction amorphous In-Ga-Zn-O thin-film transistors

Effect of oxygen partial pressure on the density of states of amorphous InGaZnO thin-film transistors

Effect of O2 Incorporation During the Channel Fabrication Process on Aluminum-Doped Zinc Oxide Thin-Film Transistor Characteristics

Influence of O2 on Al-Zn-Sn-O TFTs in the Active Layer Deposition and Annealing Process

Influence of oxygen flow during sputtering process on the electrical properties of Ga-doped InZnSnO thin film transistor

The Effect of Oxygen Partial Pressure During Active Layer Deposition on Bias Stability of A-Ingazno TFTs

Effect of Oxygen Pressure on GZO Film As Active Layer of the TFT Fabricated at Room Temperature

Critical Effect of Oxygen Pressure in Pulsed Laser Deposition for Room Temperature and High Performance Amorphous In-Ga-Zn-O Thin Film Transistors

Atmosphere Effect in Post-Annealing Treatments for Amorphous InGaZnO Thin-Film Transistors with SiOx Passivation Layers

Influence of Oxygen Plasma Treatment on the Amorphous IGZO Thin Film Transistors

Roles of Oxygen Interstitial Defects in Atomic-Layer Deposited InGaZnO Thin Films with Controlling the Cationic Compositions and Gate-Stack Processes for the Devices with Subμm Channel Lengths

Modulation of Interface and Bulk States in Amorphous InGaZnO Thin-Film Transistors with Double Stacked Channel Layers

Effect of Oxygen Plasma Treatment on the Performance of GQDs-Modulated InGaZnO Thin-Film Transistors

Oxygen interstitial creation in a-IGZO thin-film transistors under positive gate-bias stress

Oxygen Plasma Assisted High Performance Solution-Processed Al2Ox Gate Insulator for Combustion-Processed InGaZnOx Thin Film Transistors

Water Assisted Oxygen Absorption on the Instability of Amorphous InAlZnO Thin-Film Transistors

Amorphous Oxide Thin Film Transistors with Nitrogen-Doped Hetero-Structure Channel Layers

Effect of Etching Stop Layer on Characteristics of Amorphous Igzo Thin Film Transistor Fabricated at Low Temperature