Influence of oxygen flow during sputtering process on the electrical properties of Ga-doped InZnSnO thin film transistor

Hui Yang,Jinbao Su,Xiqing Zhang

DOI: https://doi.org/10.1088/1361-6641/abe140

IF: 2.048

2021-02-26

Semiconductor Science and Technology

Abstract:Abstract This work presents the electrical properties of amorphous gallium-doped indium zinc tin oxide (Ga-IZTO) thin film transistors (TFTs), as a function of O 2 flow rate (Ar/O 2 ), during the sputtering process of the channel layer. As the O 2 flow rate increased from 30:0 to 30:7, the saturation mobility ( μ SAT ) monotonically degraded from 31.5 cm 2 V −1 s −1 to 12.0 cm 2 V −1 s −1 , the threshold voltage ( V TH ) shifted from 0.8 V to 6.8 V, and the V TH shift (Δ V TH ) induced by the negative bias stress improved from −7.0 V to −2.8 V. X-ray diffraction analysis indicated that the microstructure of all the films is amorphous, which is independent of O 2 flow rate. Transmittance spectra reflected that the average transmittance of the thin film is sensitive to the O 2 flow rate and decreases as the O 2 flow rate increases. XPS analysis revealed that the density of oxygen vacancies is reduced, and the oxygen lattices are enhanced as the O 2 flow rate increases. The Hall effect measurements indicated that the carrier concentration ( n ) was reduced with increasing O 2 flow rate. These results show that the electrical properties of Ga-IZTO TFTs can be easily tuned by the O 2 flow rate during the sputtering process. The related mechanism for the variations of electrical properties of Ga-IZTO TFT has been discussed in detail.

engineering, electrical & electronic,materials science, multidisciplinary,physics, condensed matter