Abstract:Passivating trap defects and controlling carrier concentration and doping profiles in the functional dielectric and channel layers is a prerequisite for designing high performance electronic devices. Here, we investigate the effects of dielectric interface trap passivation and graded channel modulation doping on the electrical performance of InGaZnO thin-film transistors (TFTs). The introduction of ultrathin Al2O3 passivation layers up to 2 nm in thickness sandwiched between HfO2 thin films allows efficient suppression of hysteresis in InGaZnO TFTs. IGZO TFTs with graded channel doping profiles were constructed by consecutive modulation of oxygen partial pressure without growth interruption. Enhancement-mode InGaZnO TFTs with high performance are fabricated by limiting the depth of the high carrier concentration gradient InGaZnO films to as thin as only a few angstroms. The graded channel structure InGaZnO TFTs shows consistently excellent characteristics including a large saturation mobility of 112.8 cm(2) V-1 s(-1), small subthreshold swing of 82.6 mV dec(-1), low threshold voltage of 0.28 V, and high on/off current ratios >2.0 x 10(9), which are comparable to those of the commercial lowtemperature poly-silicon TFTs. Most importantly, the as-fabricated InGaZnO TFTs show robust current controlling capacities for high-power light emitting diode arrays. This work represents a major step toward the development of high-performance oxide electronics.

Influence of Ga Doping on Electrical Performance and Stability of ZnO Thin-Film Transistors Prepared by Atomic Layer Deposition

Effect of Ga Doping on the Stability and Optoelectronic Properties of ZnSnO Thin Film Transistor

Performances Of Thin Film Transistors With Ga-Doped Zno Source And Drain Electrodes

Ga-concentration-dependent optical and electrical properties of Ga-doped ZnO thin films prepared by low-temperature atomic layer deposition

Effect of Oxygen Pressure on GZO Film As Active Layer of the TFT Fabricated at Room Temperature

Improved Electrical Performance of Oxide Transistor Utilizing Gallium Doping Both in Channel and Dielectric Layers

Effect of Al Doping on Performance of ZnO Thin Film Transistors

Highly transparent and conductive Ga-doped ZnO films with good thermal stability prepared by dual-target reactive sputtering

High Negative Bias Stability Gadolinium-doped Aluminum-Zinc-Oxide Thin Film Transistors

The Influence of Hafnium Doping on Density of States in Zinc Oxide Thin-Film Transistors Deposited via Atomic Layer Deposition

Structural, Morphological, Optical and Electrical Properties of Ga-doped ZnO Transparent Conducting Thin Films

Electrical Properties in Group IV Elements-Doped ZnO Thin-Film Transistors

Optoelectronic Properties And The Electrical Stability Of Ga-Doped Zno Thin Films Prepared Via Radio Frequency Sputtering

Tuning the electrical performance of metal oxide thin-film transistors via dielectric interface trap passivation and graded channel modulation doping

Development and Analysis of Nitrogen-Doped Amorphous InGaZnO Thin Film Transistors

Metal Reaction-Induced Bulk-Doping Effect in Forming Conductive Source-Drain Regions of Self-Aligned Top-Gate Amorphous InGaZnO Thin-Film Transistors.

A Simple Doping Process Achieved by Modifying the Passivation Layer for Self-Aligned Top-Gate In-Ga-Zn-O Thin-Film Transistors at 200 degrees C

Significant Performance and Stability Improvement of Low-Voltage InZnO Thin-Film Transistors by Slight La Doping

Influence of indium doping on electrical performance of gallium oxide thin-film transistors

Fabrication optimization to improve performance of gallium-doped zinc oxide thin film transistors

Effect of gallium doping on the structural, optical and electrical properties of zinc oxide thin films prepared by spray pyrolysis