Abstract:Fully transparent indium gallium zinc oxide thin film transistors (IGZO TFTs) on glass substrate were fabricated by radio frequency magnetron sputtering at room temperature. The influence of oxygen plasma treatment technology on the characteristics of IGZO TFTs were analyzed. Before growing the source/drain electrodes, different power of oxygen plasma were used to treat the surface of the source/drain region. The experiment results suggest that the plasma treatment can improve the performance of device. Compared with the control group, the TFTs with O2 plasma treatment for 10 seconds and power of 150W show a better performance. The Ion/Ioff ratio was increased by an order of magnitude from 2.67×10 4 to 2.1×105, and the saturation mobility (μsat) was doubled from 0.54 cm 2 V -1 s -1 to 1.1cm 2 V -1 s -1 . The sub-threshold swing (SS) is 0.42V/dec, and Ion/Ioff ratio is 2.1×10 5 .

Effect of Etching Stop Layer on Characteristics of Amorphous Igzo Thin Film Transistor Fabricated at Low Temperature

Low-Temperature Fabrication of Fully Transparent Igzo Thin Film Transistors on Glass Substrate

Stability of Low Temperature and Transparent Amorphous Ingazno Thin Film Transistor under Illumination

Transparent Amorphous Indium-Gallium-Zinc-Oxygen Thin Film Transistors Using Solution Technology at Low Temperature

High-Performance A-Ingazno Thin-Film Transistors with Extremely Low Thermal Budget by Using a Hydrogen-Rich Al2O3 Dielectric

Significant Performance and Stability Improvements of Low-Temperature IGZO TFTs by the Formation of In-F Nanoparticles on an SiO2 Buffer Layer

A-Igzo TFTs with Inductively Coupled Plasma Chemical Vapor Deposited ${\rm SiO}_{x}$ Gate Dielectric

Effect of annealing on characteristics of amorphous InGaZnO thin film transistors fabricated by sol-gel technical

High-Performance Dual-Layer Channel Indium Gallium Zinc Oxide Thin-Film Transistors Fabricated In Different Oxygen Contents At Low Temperature

High-performance Si-doped ZnO Thin-film Transistors Fabricated on Flexible Plastic Substrate at Low Temperature

Influence of Oxygen Plasma Treatment on the Amorphous IGZO Thin Film Transistors

Low-Temperature Fabrication of IZO Thin Film for Flexible Transistors

Mobility and Stability Enhancement of Amorphous In-Ga-Zn-O TFTs with Atomic Layer Deposited Al2O3/SiO2Stacked Insulators

High-Performance Unannealed A-Ingazno Tft with an Atomic-Layer-Deposited Sio2 Insulator

High Reliability Of Igzo Tfts Using Low-Temperature Fabricated Organic Passivation Layers

Effects Of Channel Composition And Gate Dielectrics On The Stability Of A-Igzo Tfts

Effect of Annealing on Wet Etch of Amorphous IGZO Thin Film

Effects of Over-Etching Time on the Characteristics of Amorphous IGZO Thin-Film Transistors with Back-Channel-etch Structure

Effect of oxygen partial pressure on the performance of homojunction amorphous In-Ga-Zn-O thin-film transistors

High performance amorphous IGO TFTs grown at low temperature

Low-Temperature Solution-Processed Zirconium Oxide Gate Insulators for Thin-Film Transistors