Abstract:In this work, acetylacetone assisted solution-processed In-Ga-Zn-O (IGZO) thin film transistors (TFTs) using Al2O3 as gate dielectrics were investigated. Normally, fully covered Al2O3 thin films are difficult to achieve by spin coating with conventional solvent, such as 2-methoxyethanol, due to the poor wettability of highly doped silicon. Here, a conventional aluminum nitrate solution with an additive was designed to spin coat robust continuous Al2O3 thin films, resulting from improved solution hydrophilic with a contact angle of 17 degrees. For active layer fabrication, we utilized the previous reported combustion process to lower treatment temperature, which could be confined in the range from 220 degrees C to 300 degrees C, without losing the device performance. Results show that all the devices performed well. Especially, after 240 degrees C annealing of both Al2O3 (in thickness of around 45 nm) and IGZO thin films (in thickness of around 30 nm), we have obtained the following device parameters, namely a Al2O3 dielectric breakdown electric field at 7.8 MV cm(-1), a current density of around 1 x 10(-6) A cm(-2) in the voltage range of -3 V to 3 V, a areal capacitance of 291 nF cm(-2) at 100 Hz, a carrier mobility of 0.74 cm(2) V-1 s(-1), a threshold voltage of -0.4 V, a current on-off ratio of 6 x 10(3), a subthreshold swing of 375 mV per decade. Fabrication of combustion-processed active layers and our facile solution processed high-k dielectrics provides a feasible approach for low cost oxide flexible TFTs applications.

Low-Temperature Solution-Processed Zirconium Oxide Gate Insulators for Thin-Film Transistors

Solution-Processed Zirconium Oxide Gate Insulators for Top Gate and Low Operating Voltage Thin-Film Transistor

Fully solution-induced high performance indium oxide thin film transistors with ZrOx high-k gate dielectrics

Influence of Annealing Temperatures on Solution-Processed Alinzno Thin Film Transistors

Low-voltage Zinc Oxide Thin-Film Transistors with Solution-Processed Channel and Dielectric Layers below 150 °C

Low-temperature fabrication of high performance indium oxide thin film transistors

Solution-processed Lithium-Doped Zinc Oxide Thin-Film Transistors at Low Temperatures Between 100 and 300 °C

Fully solution-processed low-voltage aqueous In2O3 thin-film transistors using an ultrathin ZrO(x) dielectric.

Solution-Processed Zinc Oxide Thin-Film Transistors with a Low-Temperature Polymer Passivation Layer

Low-Temperature Fabrication of Solution-Processed InGaZnO Thin-Film Transistors

Low-temperature facile solution-processed gate dielectric for combustion derived oxide thin film transistors

Chemical and Electrical Properties of Low-Temperature Solution-Processed In–Ga–Zn-O Thin-Film Transistors

Low-Temperature Fabrication of IZO Thin Film for Flexible Transistors

High‐mobility Flexible Thin‐film Transistors with a Low‐temperature Zirconium‐doped Indium Oxide Channel Layer

Solution-Processed Low-Operating-Voltage Thin-Film Transistors with Bottom-Gate Top-Contact Structure

Low-Temperature Fabrication of Fully Transparent Igzo Thin Film Transistors on Glass Substrate

Transparent Amorphous Indium-Gallium-Zinc-Oxygen Thin Film Transistors Using Solution Technology at Low Temperature

Low-Temperature Solution-Processed HfZrO Gate Insulator for High-Performance of Flexible LaZnO Thin-Film Transistor

High Mobility Thin-Film Transistor with Solution-Processed Hafnium-Oxide Dielectric and Zinc-Indium-Tin-Oxide Semiconductor

High Carrier Mobility Low-Voltage ZnO Thin Film Transistors Fabricated at a Low Temperature Via Solution Processing

Solution-Processed Indium-Zinc-Oxide Thin-Film Transistors Based On Anodized Aluminum Oxide Gate Insulator Modified With Zirconium Oxide