Abstract:The preparation of thin-film transistors (TFTs) with InGaZnO (IGZO) channels using sol–gel technology has the advantages of simplicity in terms of process and weak substrate selectivity. We prepared a series of TFT devices with a top contact and bottom gate structure, in which the top contact was divided into rectangular and circular structures of drain/source electrodes. The field-effect performance of TFT devices with circular pattern drain/source electrodes was better than that with a traditional rectangular structure on both substrates. The uniform distribution of the potential in the circular electrode structure was more conducive to the regulation of carriers under the same channel length at different applied voltages. In addition, with the development of transparent substrate devices, we also constructed a hafnium oxide (HfO2) insulation layer and an IGZO active layer on an indium tin oxide conductive substrate, and explored the effect of circular drain/source electrodes on field-effect properties of the semitransparent TFT device. The IGZO deposited on the HfO2 dielectric layer by spin-coating can effectively reduce the surface roughness of the HfO2 layer and optimize the scattering of carriers at the interface in TFT devices.

Chemical and Electrical Properties of Low-Temperature Solution-Processed In–Ga–Zn-O Thin-Film Transistors

Fully solution-induced high performance indium oxide thin film transistors with ZrOx high-k gate dielectrics

Low-Temperature Solution-Processed Bilayer Ingazno/In 2O 3 Thin Film Transistors Based on Lightwave Annealing

Solution-Processed Low-Operating-Voltage Thin-Film Transistors with Bottom-Gate Top-Contact Structure

Low-Temperature Fabrication of IZO Thin Film for Flexible Transistors

Solution-processed bilayer InGaZnO/In2O3 thin film transistors at low temperature by lightwave annealing

Fabrication and performance of indium oxide based transparent thin film transistors

Fabrication and Properties of InGaZnO Thin-Film Transistors Based on a Sol–Gel Method with Different Electrode Patterns

Low-Temperature Solution-Processed Zirconium Oxide Gate Insulators for Thin-Film Transistors

Transparent Amorphous Indium-Gallium-Zinc-Oxygen Thin Film Transistors Using Solution Technology at Low Temperature

High-Performance Amorphous InGaZnO Thin-Film Transistor Gated by HfAlOₓ Dielectric with Ultralow Subthreshold Swing

Solution-Processed Zirconium Oxide Gate Insulators for Top Gate and Low Operating Voltage Thin-Film Transistor

High Performance Aluminum-Doped Zno Thin Film Transistors with High-K Gate Dielectrics Fabricated at Low Temperature

A Simple Doping Process Achieved by Modifying the Passivation Layer for Self-Aligned Top-Gate In-Ga-Zn-O Thin-Film Transistors at 200 degrees C

A Simple Doping Process Achieved by Modifying the Passivation Layer for Self-Aligned Top-Gate In-Ga-Zn-O Thin-Film Transistors at 200 °C

Large Area, Ultrathin, and Transparent InGaZnO Films from Printing of Liquid Ga–In–Zn Alloys for Thin Film Transistors

Fabrication of Transparent Indium Zinc Oxide Thin Film Transistors by Sol-gel Technology

Low-Temperature Fabrication of Fully Transparent Igzo Thin Film Transistors on Glass Substrate

Room-Temperature-Processed Flexible Amorphous InGaZnO Thin Film Transistor.

High Mobility Thin-Film Transistor with Solution-Processed Hafnium-Oxide Dielectric and Zinc-Indium-Tin-Oxide Semiconductor

Significant Performance and Stability Improvements of Low-Temperature IGZO TFTs by the Formation of In-F Nanoparticles on an SiO2 Buffer Layer