Abstract:We prepared amorphous indium–gallium–zinc oxide (a-IGZO) thin films with various Ga content ratios and investigated their feasibility as the active channel layers of top-gate thin-film transistors (TFT). First, the 2-inch IGZO sputtering targets with stoichiometric ratios of InGaZn2O5, InGaZnO4, and InGa2ZnO5.5 were fabricated using In2O3, Ga2O3, and ZnO oxide powders as raw materials via sintering treatments at temperatures ranging from 900 °C to 1300 °C for 6 h or 8 h. X-ray diffraction analysis indicated that the InGaZn2O5 and InGaZnO4 targets are single-phase structures whereas the InGa2ZnO5.5 target is a two-phase structure. Hall effect measurement indicated that the a-InGaZn2O5 and a-InGaZnO4 layers possess a carrier concentration (N) of about 1019 cm−3 and a resistivity (ρ) of about 10−2 Ω·cm; however, the N of the a-InGa2ZnO5.5 layer is only 1017 cm−3, and the ρ is about 1 to 4 Ω·cm. Moreover, the a-InGaZn2O5 layer exhibited the highest Hall-effect mobility (μHall) of 21.17 cm2·V−1·sec−1. This indicated that the impedance of Ga3+ ions to carrier migration is the main factor affecting the electrical properties of a-IGZO layers. Ga content in the a-IGZO channel similarly affects the performance of the TFT devices prepared in this study. The annealing at 300 °C for 1 h in an ambient atmosphere was found to significantly improve the electrical properties of the TFT devices. The best performance was observed in the a-InGaZnO4 TFT sample subjected to post-annealing at 300 °C with Vth = −0.85 V, μFE = 8.46 cm2, V−1·sec−1, SS = 2.31, V·decade−1, and Ion/Ioff = 2.9 × 104.

Fabrication of Transparent Indium Zinc Oxide Thin Film Transistors by Sol-gel Technology

Sol–gel processed indium zinc oxide thin film and transparent thin-film transistors

Influence of Annealing Temperatures on Solution-Processed Alinzno Thin Film Transistors

Fabrication and performance of indium oxide based transparent thin film transistors

Fabrication and Properties of InGaZnO Thin-Film Transistors Based on a Sol–Gel Method with Different Electrode Patterns

Low-Temperature Fabrication of IZO Thin Film for Flexible Transistors

Transparent Amorphous Indium-Gallium-Zinc-Oxygen Thin Film Transistors Using Solution Technology at Low Temperature

Amorphous zinc-doped indium oxide channel layers prepared by DC reactive magnetron sputtering

Low-Temperature Fabrication of Fully Transparent Igzo Thin Film Transistors on Glass Substrate

High-Mobility Solution-Processed Amorphous Indium Zinc $\hbox{oxide/in}_{2}\hbox{o}_{3}$ Nanocrystal Hybrid Thin-Film Transistor

Effect of annealing on characteristics of amorphous InGaZnO thin film transistors fabricated by sol-gel technical

Amorphous indium zinc oxide thin film transistors with poly-4-vinylphenol gate dielectric layers

One-Volt, Solution-Processed InZnO Thin-Film Transistors

Low-temperature fabrication of high performance indium oxide thin film transistors

Preparation and Electrical Characteristics of Transparent Thin Film Transistors with Sputtered Aluminum and Phosphorus Co-Doped Indium-Zinc-oxide Channel Layer

High-performance Transparent Li-doped Indium-Tin-zinc-oxide Thin Film Transistor Fabricated by Radio Frequency Magnetron Sputtering Method

Chemical and Electrical Properties of Low-Temperature Solution-Processed In–Ga–Zn-O Thin-Film Transistors

Amorphous IZO-based transparent thin film transistors

The Fabrication of Indium–Gallium–Zinc Oxide Sputtering Targets with Various Gallium Contents and Their Applications to Top-Gate Thin-Film Transistors

Performances of Transparent Indium Zinc Oxide Thin Film Transistors Using ZrO2 As Dielectric Processed by Solution Method

The Fabrication of Thin Film Transistors with ZnO As Active Channel Layer