Abstract:We prepared amorphous indium–gallium–zinc oxide (a-IGZO) thin films with various Ga content ratios and investigated their feasibility as the active channel layers of top-gate thin-film transistors (TFT). First, the 2-inch IGZO sputtering targets with stoichiometric ratios of InGaZn2O5, InGaZnO4, and InGa2ZnO5.5 were fabricated using In2O3, Ga2O3, and ZnO oxide powders as raw materials via sintering treatments at temperatures ranging from 900 °C to 1300 °C for 6 h or 8 h. X-ray diffraction analysis indicated that the InGaZn2O5 and InGaZnO4 targets are single-phase structures whereas the InGa2ZnO5.5 target is a two-phase structure. Hall effect measurement indicated that the a-InGaZn2O5 and a-InGaZnO4 layers possess a carrier concentration (N) of about 1019 cm−3 and a resistivity (ρ) of about 10−2 Ω·cm; however, the N of the a-InGa2ZnO5.5 layer is only 1017 cm−3, and the ρ is about 1 to 4 Ω·cm. Moreover, the a-InGaZn2O5 layer exhibited the highest Hall-effect mobility (μHall) of 21.17 cm2·V−1·sec−1. This indicated that the impedance of Ga3+ ions to carrier migration is the main factor affecting the electrical properties of a-IGZO layers. Ga content in the a-IGZO channel similarly affects the performance of the TFT devices prepared in this study. The annealing at 300 °C for 1 h in an ambient atmosphere was found to significantly improve the electrical properties of the TFT devices. The best performance was observed in the a-InGaZnO4 TFT sample subjected to post-annealing at 300 °C with Vth = −0.85 V, μFE = 8.46 cm2, V−1·sec−1, SS = 2.31, V·decade−1, and Ion/Ioff = 2.9 × 104.

Sol–gel processed indium zinc oxide thin film and transparent thin-film transistors

Fabrication of Transparent Indium Zinc Oxide Thin Film Transistors by Sol-gel Technology

Influence of Annealing Temperatures on Solution-Processed Alinzno Thin Film Transistors

Fabrication and performance of indium oxide based transparent thin film transistors

Amorphous zinc-doped indium oxide channel layers prepared by DC reactive magnetron sputtering

Structural, Electrical, and Optical Properties of ZnInO Alloy Thin Films

Electrical Properties of Indium Aluminum Zinc Oxide Thin Film Transistors

Amorphous indium zinc oxide thin film transistors with poly-4-vinylphenol gate dielectric layers

Organic Dielectric Indium Zinc Oxide Thin Film Transistors

Transparent Amorphous Indium-Gallium-Zinc-Oxygen Thin Film Transistors Using Solution Technology at Low Temperature

Low-Temperature Fabrication of IZO Thin Film for Flexible Transistors

Indium zinc oxide semiconductor thin films deposited by dc magnetron sputtering at room temperature

Fabrication of Indium Gallium Zinc Oxide (IGZO) TFTs Using a Solution-Based Process

Investigation of the Microstructure, Optical and Electrical Properties of In-Ga-Zn Oxide Thin Film Using the Sol-Gel Method

Solution-processed indium gallium zinc oxide thin-film transistors with infrared irradiation annealing

The Fabrication of Indium–Gallium–Zinc Oxide Sputtering Targets with Various Gallium Contents and Their Applications to Top-Gate Thin-Film Transistors

Fabrication and Properties of InGaZnO Thin-Film Transistors Based on a Sol–Gel Method with Different Electrode Patterns

Effects of Hf Incorporation on Indium Zinc Oxide Thin-Film Transistors Using Solution Process

Effect of annealing on characteristics of amorphous InGaZnO thin film transistors fabricated by sol-gel technical

Performance Enhancement of Indium Zinc Oxide Thin-Film Transistors Through Process Optimizations

Solution-processed zinc oxide thin films and top-gate thin film transistors