Abstract:Active electronics implemented on cheap flexible polymer substrates offer the promise of novel display technologies, wearable electronics, large area memory, and a multitude of other, as-yet-unthought-of applications that require low cost and high volume manufacturing. Thin film transistors (TFT's) fabricated on temperature-sensitive plastic substrates at low temperatures are the key to this technology. TFT's that use metal (In, Zn, Sn, Ga) oxide channels offer both high mobility (relative to amorphous Si) and the advantage of optical transparency in the visible regime. We report on the fabrication and performance of amorphous oxide transparent thin film transistors that use dc-magnetron sputter techniques to deposit IZO (In2O3 — 10 wt.% ZnO) at low oxygen potential (0 vol.% O2) for the source, drain, and gate-contact metallization and, at higher oxygen partial pressures (10 vol.% O2), for the semi-conducting channel. The devices in this study were processed at room temperature except for a single 280 °C PECVD deposition step to deposit a 230 nm-thick SiOx gate dielectric. The devices are optically transparent and operate in depletion mode with a threshold voltage of −5 V, mobility of 15 cm2/V s, an on-off ratio of >106 and, a sub-threshold slope of 1.2 V/decade. In addition, we report persistent photo-conductivity in the channel region of these devices when exposed to UV illumination.

Indium zinc oxide semiconductor thin films deposited by dc magnetron sputtering at room temperature

Amorphous zinc-doped indium oxide channel layers prepared by DC reactive magnetron sputtering

Structural, Electrical, and Optical Properties of ZnInO Alloy Thin Films

Organic Dielectric Indium Zinc Oxide Thin Film Transistors

Deposition and Characterization of AZO Thin Films on Flexible Glass Substrates Using DC Magnetron Sputtering Technique

Realization of high transparent mobility zinc‐doped indium oxide (IZO) thin films by RF‐magnetron sputtering

Fabrication of Transparent Indium Zinc Oxide Thin Film Transistors by Sol-gel Technology

Sol–gel processed indium zinc oxide thin film and transparent thin-film transistors

Electrical Properties of Indium Aluminum Zinc Oxide Thin Film Transistors

Performances of Transparent Indium Zinc Oxide Thin Film Transistors Using ZrO2 As Dielectric Processed by Solution Method

Deposition of IGZO or ITZO Thin Films by Co-Sputtering of IZO and GZO or ITO Targets

Amorphous IZO-based transparent thin film transistors

Study of zinc tin oxide thin-film transistor

Fabrication and performance of indium oxide based transparent thin film transistors

Transparent Conductive Indium Zinc Oxide Films Prepared by Pulsed Plasma Deposition

Amorphous indium zinc oxide thin film transistors with poly-4-vinylphenol gate dielectric layers

Optical and electrical properties of room temperature prepared α-IGZO thin films using an In2Ga2ZnO7 ceramic target

Characteristics of Zirconium-Doped Indium Tin Oxide Thin Films Deposited by Magnetron Sputtering

Low-Temperature Fabrication of IZO Thin Film for Flexible Transistors

Development of Transparent Oxide Thin Films for Flexible Devices

Transparent conductive In2O3:Mo thin films prepared by reactive direct current magnetron sputtering at room temperature