Abstract:Low-temperature growth of In2O3 films was demonstrated at 70-250 °C by plasma-enhanced atomic layer deposition (PEALD) using a newly synthesized liquid indium precursor, dimethyl(N-ethoxy-2,2-dimethylcarboxylicpropanamide)indium (Me2In(EDPA)), and O2 plasma for application to high-mobility thin film transistors. Self-limiting In2O3 PEALD growth was observed with a saturated growth rate of approximately 0.053 nm/cycle in an ALD temperature window of 90-180 °C. As-deposited In2O3 films showed negligible residual impurity, film densities as high as 6.64-7.16 g/cm3, smooth surface morphology with a root-mean-square (RMS) roughness of approximately 0.2 nm, and semiconducting level carrier concentrations of 1017-1018 cm-3. Ultrathin In2O3 channel-based thin film transistors (TFTs) were fabricated in a coplanar bottom gate structure, and their electrical performances were evaluated. Because of the excellent quality of In2O3 films, superior electronic switching performances were achieved with high field effect mobilities of 28-30 and 16-19 cm2/V·s in the linear and saturation regimes, respectively. Furthermore, the fabricated TFTs showed excellent gate control characteristics in terms of subthreshold swing, hysteresis, and on/off current ratio. The low-temperature PEALD process for high-quality In2O3 films using the developed novel In precursor can be widely used in a variety of applications such as microelectronics, displays, energy devices, and sensors, especially at temperatures compatible with organic substrates.

In 2 O 3 透明薄膜晶体管的制备及其电学性能的研究

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Ultrathin In2O3 Thin-Film Transistors Deposited from Trimethylindium and Ozone

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Ultrathin In2O3thin-film transistors deposited from trimethylindium and ozone

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Comparative Study of Indium Oxide Films for High‐Mobility TFTs: ALD, PLD and Solution Process

Amorphous Semi-Insulating Al-doped In2O3 Growth by Atomic Layer Deposition for Thin-Film Transistors

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Homojunction In2O3-TFTs Prepared by Anodization Technique

High mobility ultra-thin crystalline indium oxide thin film transistor using atomic layer deposition

Low-Temperature Growth of Indium Oxide Thin Film by Plasma-Enhanced Atomic Layer Deposition Using Liquid Dimethyl(N-ethoxy-2,2-dimethylpropanamido)indium for High-Mobility Thin Film Transistor Application

High mobility and productivity of flexible In2O3 thin-film transistors on polyimide substrates via atmospheric pressure spatial atomic layer deposition

Atomic-Layer-Deposition of Indium Oxide Nano-films for Thin-Film Transistors

Self-Assembled Transparent A-Igzo Based Tfts for Flexible Sensing Applications

Transparent Conductive Indium Zinc Oxide Films Prepared by Pulsed Plasma Deposition

High Performance (vth ~ 0 V, SS ~ 69 Mv/dec, IOn/IOff ~ 1010) Thin-Film Transistors Using Ultrathin Indium Oxide Channel and SiO2 Passivation

Effect of Atmosphere Dependent Annealing on the Electrical Characteristics of a-In2O3 Thin-film Transistors