Abstract:A new strategy based on atomic layer deposition and plasma fluorination is developed to fabricate high‐performance In2O3:F thin‐film transistors (TFTs) with remarkable bias‐stress stability. Density functional theory analysis reveals that the fluorine doping can stabilize the lattice oxygen and electrically passivate the VO defects in In2O3. The afforded In2O3:F TFTs are of high promise for the CMOS back‐end‐of‐line compatible applications. A low‐thermal‐budget fabrication approach is developed to realize high‐performance fluorine‐doped indium oxide (In2O3:F) thin‐film transistors (TFTs) with remarkable bias‐stress stability. The ultrathin transistor channel layer is prepared by a re‐developed atomic layer deposition (ALD) process of using cyclopentadienyl indium(I) (InCp) and O2 plasma to deposit a crystalline In2O3 film, followed by a new fluorine doping strategy to use CF4 plasma to afford the In2O3:F layer. As revealed by the density functional theory (DFT) analysis, the fluorine doping can stabilize the lattice oxygen and electrically passivate the problematic VO defects in In2O3 by forming the FOFi spectator defects. Therefore, the fabricated In2O3:F TFTs show simultaneously excellent electrical performance and remarkable bias‐stress stability, with high μFE of 35.9 cm2 V−1 s−1, positive Vth of 0.36 V, steep SS of 94.3 mV dec−1, small hysteresis of 33 mV, and small ΔVth of −111 and 49 mV under NBS and PBS, respectively. This work demonstrates the high promise of the fluorinated ALD In2O3:F TFTs for the CMOS back‐end‐of‐line (BEOL) compatible technologies toward advanced monolithic 3D integration.

Ultrathin In2O3 Thin-Film Transistors Deposited from Trimethylindium and Ozone

Ultrathin In2O3thin-film transistors deposited from trimethylindium and ozone

Eco-Friendly, Water-Induced In2O3 Thin Films for High-Performance Thin-Film Transistors and Inverters

Fabrication and performance of indium oxide based transparent thin film transistors

Fully solution-induced high performance indium oxide thin film transistors with ZrOx high-k gate dielectrics

In 2 O 3 透明薄膜晶体管的制备及其电学性能的研究

Enhancement of Electrical Performance in In2o3 Thin-Film Transistors by Improving the Densification and Surface Morphology of Channel Layers

Atomic-Layer-Deposition of Indium Oxide Nano-films for Thin-Film Transistors

High mobility ultra-thin crystalline indium oxide thin film transistor using atomic layer deposition

Low-Temperature Growth of Indium Oxide Thin Film by Plasma-Enhanced Atomic Layer Deposition Using Liquid Dimethyl(N-ethoxy-2,2-dimethylpropanamido)indium for High-Mobility Thin Film Transistor Application

Amorphous Semi-Insulating Al-doped In2O3 Growth by Atomic Layer Deposition for Thin-Film Transistors

Wide process temperature of atomic layer deposition for In 2 O 3 thin-film transistors using novel indium precursor (N,N'-di-tert butylacetimidamido)dimethyllindium)

High-Performance of InGaZnO TFTs With an Ultrathin 5-nm Al<sub>2</sub>O<sub>3</sub> Gate Dielectric Enabled by a Novel Atomic Layer Deposition Method

High Performance (vth ~ 0 V, SS ~ 69 Mv/dec, IOn/IOff ~ 1010) Thin-Film Transistors Using Ultrathin Indium Oxide Channel and SiO2 Passivation

Remarkable Bias‐Stress Stability of Ultrathin Atomic‐Layer‐Deposited Indium Oxide Thin‐Film Transistors Enabled by Plasma Fluorination

Comparative Study of Indium Oxide Films for High‐Mobility TFTs: ALD, PLD and Solution Process

High-Performance of InGaZnO TFTs With an Ultrathin 5-nm Al2O3 Gate Dielectric Enabled by a Novel Atomic Layer Deposition Method

Fast Improved Thin-Film Transistors with Atomic-Layer-Deposited In2O3 Channels Via O2 Plasma Treatment

High-Performance of InGaZnO TFTs With an Ultrathin 5-nm Al₂O₃ Gate Dielectric Enabled by a Novel Atomic Layer Deposition Method

Atomically Thin Indium-Tin-Oxide Transistors Enabled by Atomic Layer Deposition

Atomic-Layer-Deposited In–Sn–O Thin-Film Transistors with Robust Thermal Stability at 400 $^{\circ}$ C and Downscaling of Channel