Abstract:Thin-film transistors (TFTs) made of solution-processable transparent metal oxide semiconductors show great potential for use in emerging large-scale optoelectronics. However, current solution-processed metal oxide TFTs still suffer from relatively poor device performance, hindering their further advancement. In this work, we create a novel ultrathin crystalline indium–boron–oxide (In-B-O) channel layer for high-performance TFTs. We show that high-quality ultrathin (~10 nm) crystalline In-B-O with an atomically smooth nature (RMS: ~0.15 nm) could be grown from an aqueous solution via facile one-step spin-coating. The impacts of B doping on the physical, chemical and electrical properties of the In2O3 film are systematically investigated. The results show that B has large metal–oxide bond dissociation energy and high Lewis acid strength, which can suppress oxygen vacancy-/hydroxyl-related defects and alleviate dopant-induced carrier scattering, resulting in electrical performance improvement. The optimized In-B-O (10% B) TFTs based on SiO2/Si substrate demonstrate a mobility of ~8 cm2/(V s), an on/off current ratio of ~106 and a subthreshold swing of 0.86 V/dec. Furthermore, by introducing the water-processed high-K ZrO2 dielectric, the fully aqueous solution-grown In-B-O/ZrO2 TFTs exhibit excellent device performance, with a mobility of ~11 cm2/(V s), an on/off current of ~105, a subthreshold swing of 0.19 V/dec, a low operating voltage of 5 V and superior bias stress stability. Our research opens up new avenues for low-cost, large-area green oxide electronic devices with superior performance.

Enhancement of Electrical Performance in In2o3 Thin-Film Transistors by Improving the Densification and Surface Morphology of Channel Layers

Fabrication and performance of indium oxide based transparent thin film transistors

Fully solution-induced high performance indium oxide thin film transistors with ZrOx high-k gate dielectrics

Eco-Friendly, Water-Induced In2O3 Thin Films for High-Performance Thin-Film Transistors and Inverters

In 2 O 3 透明薄膜晶体管的制备及其电学性能的研究

Ultrathin In2O3 Thin-Film Transistors Deposited from Trimethylindium and Ozone

High Performance (vth ~ 0 V, SS ~ 69 Mv/dec, IOn/IOff ~ 1010) Thin-Film Transistors Using Ultrathin Indium Oxide Channel and SiO2 Passivation

Enhanced Electrical Performance and Stability of Solution-Processed Thin-Film Transistors with In2O3/In2O3:Gd Heterojunction Channel Layer

Ultrathin In2O3thin-film transistors deposited from trimethylindium and ozone

Amorphous Semi-Insulating Al-doped In2O3 Growth by Atomic Layer Deposition for Thin-Film Transistors

Water-Processed Ultrathin Crystalline Indium–Boron–Oxide Channel for High-Performance Thin-Film Transistor Applications

Effect of Titanium Cation Doping on the Performance of In2O3 Thin Film Transistors Grown via Atomic Layer Deposition

High mobility and productivity of flexible In2O3 thin-film transistors on polyimide substrates via atmospheric pressure spatial atomic layer deposition

Influence of the Channel Layer Thickness on Electrical Properties of Indium Zinc Oxide Thin-Film Transistor

Performance improvement of tin-doped zinc oxide thin-film transistor by novel channel modulation layer of indium tin oxide/tin zinc oxide

Fast Improved Thin-Film Transistors with Atomic-Layer-Deposited In2O3 Channels Via O2 Plasma Treatment

Influence of indium doping on electrical performance of gallium oxide thin-film transistors

Fabrication and Properties of InGaZnO Thin-Film Transistors Based on a Sol–Gel Method with Different Electrode Patterns

High mobility ultra-thin crystalline indium oxide thin film transistor using atomic layer deposition

High-Performance Thin-Film Transistors with ZnO/Al2O3 Superlattice Channel Fabricated by Atomic Layer Deposition

High-Performance Amorphous InGaZnO Thin Film Transistor With High-k Van Der Waals Molecular Dielectric