Abstract:Titanium dioxide (TiO 2 ) with advantages including abundance in earth, non-toxicity, high chemical stability, surface hydrophobicity in dark, and extremely high permittivity could be highly promising for advanced electronics. However, the thermal stability and low bandgap (E g ) of TiO2 pose a big challenge for TiO 2 to be used as dielectric, which could be resolved by doping with other metal cations. In this work, we studied the impact of gallium incorporation on electrical and material characteristics of TiO 2 thin films. These TiO 2 and Ti X GaO films with thickness of 15 nm were derived by atomic layer deposition (ALD) and then annealed in O 2 ambient at 500°C, where the levels of Ga incorporation were tuned by the cycle ratio (X) of TiO 2 to that of Ga 2 O 3 during ALD growth. Both thin film transistors (TFTs) using Ti X GaO (TiO 2 ) thin films as the channel and metal-oxide semiconductor capacitors (MOSCAPs) using Ti X GaO (TiO 2 ) thin films as the dielectric were fabricated to unravel the impact of Ga incorporation on electrical properties of TiO 2 thin films. It is found that the Ga incorporation reduces the conductivity of TiO 2 thin films significantly. Pure TiO 2 thin films could be the ideal channel material for TFTs with excellent switching behaviors whereas Ga-incorporated TiO 2 thin films could be the dielectric material for MOSCAPs with good insulating properties. The leakage current and dielectric constant ( k ) value are also found to be decreased with the increased Ga content in Ti X GaO/Si MOSCAPs. Additionally, the density of interface trap (D it ) between Ti X GaO and Si were extracted by multi-frequency conductance method, where a “U-shape” trap profile with similar level of D it values can be observed for Ti X GaO MOSCAPs with varying Ga contents. Material characterizations show that the Ga incorporation destabilizes the crystallization and enlarges the bandgap (E g ) of TiO 2 while maintaining a smooth surface. Interestingly, Ga incorporation is found to decrease the overall oxygen content and introduce more oxygen-related defects in the film. As a result, the reduction of leakage current upon Ga incorporation in MOSCAPs could be explained by amorphization of the film and enlarged band offset to Si rather than oxygen defect passivation. These Ga-incorporated TiO 2 films may found promising usage in future electronic device applications such as trench capacitors in dynamic random-access memory, where the emerging high- k dielectrics with low leakage currents and high thermal stability are demanded.

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Eco-Friendly, Water-Induced In2O3 Thin Films for High-Performance Thin-Film Transistors and Inverters

Fabrication and performance of indium oxide based transparent thin film transistors

Enhancement of Electrical Performance in In2o3 Thin-Film Transistors by Improving the Densification and Surface Morphology of Channel Layers

Effect of In-Situ H Doping on the Electrical Properties of In2O3 Thin-Film Transistors

Amorphous Semi-Insulating Al-doped In2O3 Growth by Atomic Layer Deposition for Thin-Film Transistors

Atomic-Layer-Deposition of Indium Oxide Nano-films for Thin-Film Transistors

Enhanced Electrical Performance and Stability of Solution-Processed Thin-Film Transistors with In2O3/In2O3:Gd Heterojunction Channel Layer

High-Performance of InGaZnO TFTs With an Ultrathin 5-nm Al2O3 Gate Dielectric Enabled by a Novel Atomic Layer Deposition Method

Enhanced Electrical Performance and Low Frequency Noise of In2O3 Thin-Film Transistors Using Al2O3/CeGdOx Bilayer Gate Dielectrics

High-Performance of InGaZnO TFTs With an Ultrathin 5-nm Al<sub>2</sub>O<sub>3</sub> Gate Dielectric Enabled by a Novel Atomic Layer Deposition Method

Ultrathin In2O3 Thin-Film Transistors Deposited from Trimethylindium and Ozone

High-Performance of InGaZnO TFTs With an Ultrathin 5-nm Al₂O₃ Gate Dielectric Enabled by a Novel Atomic Layer Deposition Method

InZnTiON Channel Layer for Highly Stable Thin-Film Transistors and Light-Emitting Transistors

Influence of indium doping on electrical performance of gallium oxide thin-film transistors

Effects of dopants in InOx-based amorphous oxide semiconductors for thin-film transistor applications

Gallium-incorporated TiO2 thin films by atomic layer deposition for future electronic devices

Comparative Study of Indium Oxide Films for High‐Mobility TFTs: ALD, PLD and Solution Process

High mobility and productivity of flexible In2O3 thin-film transistors on polyimide substrates via atmospheric pressure spatial atomic layer deposition

Ultrathin In2O3thin-film transistors deposited from trimethylindium and ozone

Self-Aligned Ionic Doping of TiO2 Thin-Film Transistors for Enhanced Current Drivability via Postfabrication Superacid Treatment