Abstract:In this work, high-performance amorphous In0.75Ga0.23Sn0.02O (a-IGTO) transistors with an atomic layer-deposited Al2O3 dielectric layer were fabricated at a maximum processing temperature of 150 °C. Hydrogen (H) and excess oxygen (Oi) in the Al2O3 film, which was controlled by adjusting the oxygen radical density (PO2: flow rate of O2/[Ar+O2]) in the radio-frequency (rf) plasma during ALD growth of Al2O3, significantly affected the performance and stability of the resulting IGTO transistors. The concentrations of H and Oi in Al2O3/IGTO stacks according to PO2 were characterized by secondary ion mass spectroscopy, X-ray photoelectron spectroscopy, hard X-ray photoemission spectroscopy, and thermal desorption spectroscopy. The high concentration of H at a low PO2 of 2.5% caused heavy electron doping in the underlying IGTO during thermal annealing at 150 °C, leading to a conductive behavior in the resulting transistor without modulation capability. In contrast, a high PO2 condition of 20% introduced O2 molecules (or Oi) into the Al2O3 film, which negatively impacted the carrier mobility and caused anomalous photo-bias instability in the IGTO transistor. Through in-depth understanding of how to manipulate H and Oi in Al2O3 by controlling the PO2, we fabricated high-performance IGTO transistors with a high field-effect mobility (μFE) of 58.8 cm2/Vs, subthreshold gate swing (SS) of 0.12 V/decade, threshold voltage (VTH) of 0.5 V, and ION/OFF ratio of ∼109 even at the maximum processing temperature of 150 °C. Simultaneously, the optimized devices were resistant to exposure to external positive gate bias stress (PBS) and negative bias stress (NBS) for 3600 s, where the VTH shifts for exposure to PBS and NBS for this duration were 0.1 V and -0.15 V, respectively.

Wide process temperature of atomic layer deposition for In 2 O 3 thin-film transistors using novel indium precursor (N,N'-di-tert butylacetimidamido)dimethyllindium)

Eco-Friendly, Water-Induced In2O3 Thin Films for High-Performance Thin-Film Transistors and Inverters

Low-Temperature Growth of Indium Oxide Thin Film by Plasma-Enhanced Atomic Layer Deposition Using Liquid Dimethyl(N-ethoxy-2,2-dimethylpropanamido)indium for High-Mobility Thin Film Transistor Application

Atomic-Layer-Deposition of Indium Oxide Nano-films for Thin-Film Transistors

Ultrathin In2O3 Thin-Film Transistors Deposited from Trimethylindium and Ozone

Ultrathin In2O3thin-film transistors deposited from trimethylindium and ozone

Comparative Study on Indium Precursors for Plasma-Enhanced Atomic Layer Deposition of In2O3 and Application to High-Performance Field-Effect Transistors

High mobility ultra-thin crystalline indium oxide thin film transistor using atomic layer deposition

Amorphous Semi-Insulating Al-doped In2O3 Growth by Atomic Layer Deposition for Thin-Film Transistors

Atomic Layer Deposition of an Indium Gallium Oxide Thin Film for Thin-Film Transistor Applications

Comparative Study of Indium Oxide Films for High‐Mobility TFTs: ALD, PLD and Solution Process

High mobility and productivity of flexible In2O3 thin-film transistors on polyimide substrates via atmospheric pressure spatial atomic layer deposition

Tailoring indium oxide film characteristics through oxygen reactants in atomic layer deposition with highly reactive liquid precursor

Fabrication and performance of indium oxide based transparent thin film transistors

Low-Temperature Rapid Preparation of High-Performance Indium Oxide Thin Films and Transistors Based on Solution Process

Atomic-Layer-Deposited In–Sn–O Thin-Film Transistors with Robust Thermal Stability at 400 $^{\circ}$ C and Downscaling of Channel

Atomic-Layer-Deposited In–Sn–O Thin-Film Transistors With Robust Thermal Stability at 400 °C and Downscaling of Channel

Effects of Al Precursors on the Characteristics of Indium-Aluminum Oxide Semiconductor Grown by Plasma-Enhanced Atomic Layer Deposition

High-Performance Indium Gallium Tin Oxide Transistors with an Al2O3 Gate Insulator Deposited by Atomic Layer Deposition at a Low Temperature of 150 °C: Roles of Hydrogen and Excess Oxygen in the Al2O3 Dielectric Film

High-Performance Atomic-Layer-Deposited Indium Oxide 3-D Transistors and Integrated Circuits for Monolithic 3-D Integration

Remarkable Bias‐Stress Stability of Ultrathin Atomic‐Layer‐Deposited Indium Oxide Thin‐Film Transistors Enabled by Plasma Fluorination